H7651-30PR

H7651 1A Low Power LDO Features  Low voltage drop: 0.06V@100mA  Low Quiescent Current: 2uA at 5.0V  High input voltage: 8.5V  Output voltage accuracy: tolerance ±2%  Low temperature coefficient Applications  Battery-powered equipment  GRS Receivers  Hand-Hold Equipment  Wireless LAN General Description The H7651 consists of a high-precision voltage output, three-pin regulators, that provide a high reference, an error amplification circuit, and a current even when the input/output voltage current limited output driver. Transient response differential is small. Low power consumption and high accuracy is achieved through CMOS and laser trimming technologies. IN The H7651 series is a group of positive voltage to load variations have improved in comparison to the existing series. PR O SOT89 and SOT223 packages are available. Order Information H7651-①②③④ Symbol Description SI Designator ① ② ③ Integer Output Voltage(1.2V~5.0V) P Package:SOT89 G Package:SOT223 R RoHS / Pb Free G Halogen Free ④ Ver1.9 1 Shanghai Siproin Microelectronics Co. H7651 1A Low Power LDO Typical Application Note1:Input capacitor CIN=1uF. Note2:Ouput capacitor COUT=1uF/6.8uF(1uF Tantalum capacitor or 6.8uF ceramic capacitor is SI PR O Block Diagram IN recommended). Ver1.9 2 Shanghai Siproin Microelectronics Co. H7651 1A Low Power LDO PR O IN Pin Assignment Absolute Maximum Ratings Supply Voltage ................................-0.3V to 8.5V Operating Temperature .................-40℃ to 85℃ Output Current……………………………..1.1A Storage Temperature ..................-40℃ to 125℃ Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other SI conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. Ver1.9 3 Shanghai Siproin Microelectronics Co. H7651 1A Low Power LDO Electrical Characteristics H7651 for any output voltage （Ta=25℃） Parameter Symbol Conditions Output Voltage Vout Output Current*1 Iout Low dropout*2 Vdrop Line Regulation △Vout1/(Vin·Vout) Load Regulation △Vout Vin=Vout+1V 1.0mA≤Iout≤30mA detection temperature Thermal shutdown release -- Vout×1.02 V -- 1000 -- mA -- 0.05 0.2 %/V -- 12 30 mV IN Iout=100mA Vin= Vout+1V 1.0mA≤Iout≤100mA Iout=30mA 0℃≤Ta≤70℃ Iss1 -- Vin -- Junction TSD temperature Junction TSR temperature -- ±100 -- Ppm/℃ -- 2.0 5.0 uA -- -- 8.5 V - 160 - ℃ - 140 - ℃ SI temperature Vout×0.98 PR O Thermal shutdown Unit 1.6V≤Vin≤8V Coefficiency Input Voltage Max. Refer to the next table △Vout/(Ta·Vout) Supply Current Typ. Vin-Vout=1V Output voltage Temperature Min. Electrical Characteristics by Output Voltage： Output Voltage Vout(V) Conditions Typ. Max. Vout ≤ 2.0V Iout=60 mA 0.05 0.08 2.0 < Vout ≤ 3.0 Iout=80 mA 0.05 0.08 0.06 0.08 0.05 0.08 0.13 0.16 0.12 0.16 0.65 0.8 0.6 0.8 3.0 < Vout ≤ 4.0 4.0 < Vout ≤ 5.0 3.0 < Vout ≤ 4.0 4.0 < Vout ≤ 5.0 3.0 < Vout ≤ 4.0 4.0 < Vout ≤ 5.0 Ver1.9 Dropout Voltage Vdif（V） Iout=100 mA Iout=200 mA Iout=1000 mA 4 Shanghai Siproin Microelectronics Co. H7651 1A Low Power LDO Package Information SI PR O IN 3-pin SOT89 Outline Dimensions Ver1.9 5 Shanghai Siproin Microelectronics Co. SI PR O IN H7651 1A Low Power LDO Ver1.9 6 Shanghai Siproin Microelectronics Co.