SI2301CDS-T1-GE3-ES

SI2301CDS-T1-GE3-ES Rev-1.1 www.elecsuper.com SuperMOS – SOT-23 -20V BVDSS, 58mΩ RDS(on),-3.0A ID P-channel MOSFET 1. Description The SI2301CDS-T1-GE3-ES is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product SI2301CDS-T1-GE3-ES is Pb-free. 2. Features  -20V, RDS(ON)=58mΩ(Typ), VGS=-4.5V  Material: Halogen free RDS(ON)=80mΩ(Typ), VGS=-2.5V  Reliable and rugged  Fast Switching  Avalanche Rated  High density cell design for low RDS(on)  Low leakage current 3. Applications  PWM applications  Power management in portable/desktop PCs  Load switch  DC/DC conversion 4. Ordering Information Part Number Package Material Quantity per reel Flammability Rating SI2301CDS-T1-GE3-ES SOT-23 Halogen free 3,000 PCS UL 94V-0 Table-1 Ordering information 5. Pin Configuration and Functions Pin Function 1 Gate 2 Source 3 Drain Outline 3 1 Table-2 Copyright© ElecSuper Incorporated Circuit Diagram 2 Pin configuration Contact Us 1 / 6 SI2301CDS-T1-GE3-ES Rev-1.1 www.elecsuper.com 6. Specification Absolute Maximum Rating & Thermal Characteristics Ratings at 25 ℃ ambient temperature unless otherwise specified. Parameter Symbol Limit Unit Drain-Source Voltage BVDSS -20 V Gate-Source Voltage VGS ±8 V TA=25°C Continuous Drain Current TA=75°C Maximum Power Dissipation TA=25°C TA=75°C 3.0 ID A 1.7 1.4 PD W 0.84 Pulsed Drain Current IDM 9.2 A Operating Junction Temperature TJ 150 °C Storage Temperature Range Tstg -55 to +150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance Copyright© ElecSuper Incorporated Contact Us Symbol Typical Unit RθJA 90 °C/W 2 / 6 SI2301CDS-T1-GE3-ES Rev-1.1 www.elecsuper.com Electrical Characteristics At TA = 25℃ unless otherwise specified Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 uA Gate-to-source Leakage Current IGSS VDS=0V, VGS=±8V ±100 nA -0.7 -1.0 V VGS=-4.5V, ID=-3.0A 58 75 VGS=-2.5V, ID=-2.0A 80 90 VDS=-5V, ID=-2.3A 6.5 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Drain-to-source On-resistance RDS(on) Forward trans conductance(a) gfs VGS=VDS, ID=-250uA -0.4 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance Total Gate Charge Rg f=1MHZ QG(TOT) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 405 VGS=0V, VDS =-10V, f=1MHz VGS=-2.5V, VDS=-10V, ID=-2.3A 75 pF 55 6 3.3 Ω 6 0.7 nC 1.3 SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS=-4.5V, VDS=10V, RL=10Ω，ID=-1A, RG=1Ω tf 11 20 35 60 30 50 10 20 -0.8 -1.2 ns BODY DIODE CHARACTERISTICS Forward Voltage Copyright© ElecSuper Incorporated VSD VGS=0V, IS=-1.0A Contact Us V 3 / 6 SI2301CDS-T1-GE3-ES 7. Rev-1.1 www.elecsuper.com Typical Characteristic Copyright© ElecSuper Incorporated Contact Us 4 / 6 SI2301CDS-T1-GE3-ES Rev-1.1 www.elecsuper.com 8. Dimension (SOT-23) θ D b L1 3 E1 E 1 2 L e C e1 A1 A COMMON DIMENSIONS: UNITS OF MEASURE=MILLIMETER Symbol Dimensions Symbol Dimensions Min. Max. A 0.900 1.150 E1 A1 0.900 1.050 e b 0.300 0.500 e1 c 0.080 0.150 L D 2.800 3.00 L1 0.300 0.500 E 1.200 1.400 θ 0° 8° Copyright© ElecSuper Incorporated Contact Us Min. Max. 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 5 / 6 SI2301CDS-T1-GE3-ES Rev-1.1 www.elecsuper.com DISCLAIMER ELECSUPER PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for skilled developers designing with ElecSuper products. You are solely responsible for (1) selecting the appropriate ElecSuper products for your application; (2) designing, validating and testing your application; (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. ElecSuper grants you permission to use these resources only for development of an application that uses the ElecSuper products described in the resource. Other reproduction and display of these resources are prohibited. No license is granted to any other ElecSuper intellectual property right or to any third party intellectual property right. ElecSuper disclaims responsibility for, and you will fully indemnify ElecSuper and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these resources. ElecSuper’s products are provided subject to ElecSuper’s Terms of Sale or other applicable terms available either on www.elecsuper.com or provided in conjunction with such ElecSuper products. ElecSuper’s provision of these resources does not expand or otherwise alter ElecSuper’s applicable warranties or warranty disclaimers for ElecSuper products. Copyright© ElecSuper Incorporated Contact Us 6 / 6