G30N04D3

G30N04D3 N-Channel Enhancement Mode Power MOSFET Description The G30N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested 40V 30A < 9mΩ < 12mΩ pin assignment l RoHS Compliant Application l Power switch l DC/DC converters DFN3X3-8L Ordering Information Device G30N04D3 Package DFN3X3-8L Marking Packaging G30N04 5000psc/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 40 V ID 30 A IDM 110 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 50 W EAS 92 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 2.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1378) G30N04D3 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 40 -- -- V IDSS VDS = 40V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.8 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 6.5 9 VGS = 4.5V, ID = 15A -- 8 12 Forward Transconductance gFS VGS = 5V, ID = 6.5A -- 75 -- -- 1940 -- -- 176 -- -- 166 -- -- 30 -- -- 4.2 -- -- 9.5 -- -- 6.4 -- -- 17 -- -- 30 -- -- 17 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 6.5A, VGS = 10V VDD = 20V, ID = 6.5A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 30 A VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1378) G30N04D3 Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1378) G30N04D3 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 10V 6V ID, Drain Current (A) 100 120 5V VDS= 5V 4..5V ID, Drain Current (A) 120 Figure 2. Transfer Characteristics 80 4V 60 40 VGS=3.5V 20 0 0 1 2 3 100 80 60 20 0 4 25℃ 40 0 VDS, Drain-to-Source Voltage (V) Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 9 8 VGS= 4.5V VGS= 10V 5 4 3 2 0 10 20 30 Ciss 1500 1000 Coss Crss 10 20 30 6 4 2 0 10 20 30 40 40 VDS Drain-Source Voltage(V) www.gofordsemi.com 8 Is, Reverse Drain Current (A) Capacitance(pF) 2500 0 VDS = 20V, ID = 6.5A Figure 6. Source-Drain Diode Forward 3000 0 8 Qg Gate Charge（nC） Figure 5. Capacitance 500 10 0 40 ID-Drain Current（A） 2000 6 Figure 4. Gate Charge 10 6 4 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 7 2 TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1378) G30N04D3 Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. Drain-Source On-Resistance Figure 8. Safe Operation Area VGS = 4.5V ID = 15A ID, Drain Current(A) RDS(on), (Normalized) VGS = 10V, ID = 20A TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 2.5°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1378) G30N04D3 DFN3X3-8L Package information D1 A D2 E3 θ E5 t E2 E1 E E4 b K L e c L1 D A1 COMMON MM SYMBOL A A1 b c D D1 D2 E E1 E2 E3 E4 E5 e K L L1 t θ www.gofordsemi.com MIN NO M MAX 0.70 0.20 0.10 3.15 3.00 2.29 3.15 2.90 1.54 0.28 0.37 0.10 0.60 0.59 0.30 0.06 0 10° 0.75 0.30 0.152 3.30 3.15 2.45 3.30 3.05 1.74 0.48 0.57 0.20 0.65 0.69 0.40 0.125 0.075 12° 0.85 0.05 0.40 0.25 3.45 3.25 2.65 3.45 3.20 1.94 0.65 0.77 0.30 0.70 0.89 0.50 0.20 0.13 14° TEL：0755-29961263 FAX:0755-29961466(A1378)