Data Sheet
RELEASE A DATA SHEET
GRF5109
28.5 dBm POWER-LNA™
0.1 to 2.2 GHz
FEATURES
DESCRIPTION
Excellent P1dB, IP3, ACLR and NF Performance
Flexible Biasing Provides Latitude for Linearity
Optimization
160 mA Native Mode Quiescent Current Consumption
5 V Supply Voltage
50 Ω Single-ended Input and Output Impedances
-40 to 105 °C Operating Temperature Range
Process: GaAs pHEMT
The GRF5109 is a high linearity PA/Linear Driver with low
noise figure (NF). It delivers excellent P1dB, IP3 and NF
over a wide range of frequencies with fractional
bandwidths of roughly 5 to 10%.
This device can be tuned over a wide range of
frequencies from around 0.1 GHz up to 2.2 GHz.
Please consult with the GRF applications engineering
team for custom tuning/evaluation board data.
Compact 3 x 3 mm QFN-16 Package
BLOCK DIAGRAM
OP1dB: 28.5 dBm
GND/NC
OIP3: 43.5 dBm
BIAS1
GND/NC
Gain: 19 dB
GND/NC
Reference: 5 V / 830 MHz / 160 mA IDDQ
Evaluation Board Noise Figure: 1.3 dB
APPLICATIONS
12
BIAS2
11
GND/NC
3
10
RF_OUT/VDD
4
9
RF_OUT/VDD
VENABLE
1
GND/NC
2
RF_IN
RF_IN
Bias Control
Power Amplifier
Linear Driver Amplifier for High PAR Waveforms
5
6
7
8
GND/NC
GND/NC
GND/NC
GND/NC
Multi-stage LNA
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GND/NC
BIAS1
RELEASE A DATA SHEET
GND/NC
GND/NC
GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
12
BIAS2
11
GND/NC
3
10
RF_OUT/VDD
4
9
RF_OUT/VDD
7
8
GND/NC
RF_IN
GND/NC
RF_IN
Bias Control
6
2
GND/NC
GND/NC
5
1
GND/NC
VENABLE
3 x 3 mm QFN-16 Pin Out (Top View)
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Pin Assignments
Pin
Name
Description
Note
1
VENABLE
Enable Voltage Input
VENABLE and series resistor sets IDDQ. VENABLE ≤ 0.2 V disables device. On-die pull-down
resistor will turn the part off if this node is allowed to float.
2, 5, 6, 7, 8, 11,
13, 15, 16
GND/NC
Ground or No Connect
No internal connection to die. These pins can be left unconnected, or be connected
to ground (recommended). Use a via as close to the pin as possible if grounded.
3, 4
RF_IN
RF Input
9, 10
RF_OUT/VDD
PA Output/Bias
12
Bias2
Bias Circuit Supply
Connect to VDD through external resistor.
14
Bias1
Bias Circuit Ground
Consult application schematic.
PKG BASE
GND
Ground
Pins 3 & 4 tied together on system board.
Pins 9 & 10 tied together on system board. Supply VDD here.
Provides DC and RF ground for the LNA, as well as thermal heat sink. Recommend
multiple 8 mil vias beneath the package for optimal RF and thermal performance.
Refer to evaluation board top layer graphic on schematic page.
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Absolute Ratings
Parameter
Drain Voltage
Transient Average RF Input Power CW:
Load VSWR < 2:1; Duration: 106 Hours)
Maximum Dissipated Power
Symbol
Max.
Unit
VDD
6
V
PIN MAX
24
dBm
105
°C
TMAX
170
°C
PDISS MAX
1.0
W
TPKG HEAT SINK
Min.
-40
Electrostatic Discharge
Charged Device Model
CDM
1500
V
Human Body Model
HBM
250
V
Storage Temperature
TSTG
-65
Moisture Sensitivity Level
MSL
Storage
150
°C
1
--
Caution! ESD Sensitive Device.
Exceeding Absolute Maximum Rating conditions may cause permanent damage.
Note: For additional information, please refer to Manufacturing Note MN-001 — Package and Manufacturing Information.
All Guerrilla RF products are provided in RoHS compliant lead (Pb)-free packaging requiring no exemptions. Additional
information for this topic can be found at this link - Environmental and Restricted Substance Statement Library.
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Recommended Operating Conditions
Specification
Parameter
Supply Voltage
Operating Temperature (Package Heat Sink)
RF Frequency Range
Symbol
Min.
Typ.
Max.
Unit
VDD
3
5
6
V
TPKG HEAT SINK
-40
105
°C
FRF
0.1
2.2
GHz
Condition
Typical Application Schematic Using the
0.7 to 0.96 GHz Tuning Set (note 1).
RF_IN Port Impedance
ZRFIN
50
Ω
Single Ended with 2-element Match.
RF_OUT Port Impedance
ZRFOUT
50
Ω
Single Ended with 3-element Match.
Note 1: Operation outside this range is possible, but with degraded performance of some parameters.
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Nominal Operating Parameters – General
The following conditions apply unless noted otherwise: Typical Application Schematic using the 0.7 to 0.96 GHz tuning set, M1 = 5.5 kΩ, M10 = 230 Ω,
M13 = 475 Ω, IDDQ = 160 mA, 50 Ω system impedance, FTEST = 0.83 GHz, TPKG HEAT SINK = -40 to +105 °C. Typical values are at VDD = 5 V, IDDQ = 160 mA,
TPKG HEAT SINK = 25 °C. MIN/MAX specifications listed in italics are guaranteed via production test screening. All other parameters are guaranteed by
design and characterization. Evaluation board losses are included within the specifications.
Specification
Parameter
Symbol
Supply Quiescent Current
Min.
IDDQ
Operating Temperature Range
TPKG HEAT SINK
Typ.
Max.
Unit
160
190
mA
VDD = VENABLE = 5 V, RBIAS = 5.5 kΩ.
+105
°C
Measured on Package Heat Sink.
-40
Switching Rise Time
TRISE
100
ns
Switching Fall Time
TFALL
800
ns
Enable Current
IENABLE
0.7
mA
IDD
100
JC
80
Condition
Disabled Mode
Supply Current (Leakage)
500
µA
Thermal Data
Thermal Resistance: (IR Scan Method)
°C/W
On Standard Evaluation Board (note 2).
Note 2: MTTF > 106 hours for TCHANNEL ≤ 170 °C.
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Nominal Operating Parameters – RF (0.7 to 0.96 GHz, 5 V Operation)
The following conditions apply unless noted otherwise: Typical Application Schematic using the 0.7 to 0.96 GHz tuning set, M1 = 5.5 kΩ, M10 = 230 Ω,
M13 = 475 Ω, IDDQ = 160 mA, 50 Ω system impedance, FTEST = 0.83 GHz, TPKG HEAT SINK = -40 to +105 °C. Typical values are at VDD = 5 V, IDDQ = 160 mA,
TPKG HEAT SINK = 25 °C. MIN/MAX specifications listed in italics are guaranteed via production test screening. All other parameters are guaranteed by
design and characterization. Evaluation board losses are included within the specifications.
Specification
Parameter
Symbol
Min.
Typ.
Small Signal Gain
S21
18
19
dB
FRF = 0.7 to 0.96 GHz.
Input Return Loss
S11
>8
dB
FRF = 0.7 to 0.96 GHz.
Output Return Loss
S22
>15
dB
FRF = 0.7 to 0.96 GHz.
Reverse Isolation
S12
>26
dB
FRF = 0.7 to 0.96 GHz.
Evaluation Board Noise Figure
NF
1.3
dB
OIP3
43.5
dBm
28.5
dBm
Output 3rd Order Intercept
Output 1 dB Compression Power
OP1dB
26.8
Max.
Unit
Condition
Typical Operating Curve Conditions
The following conditions apply unless noted otherwise: Typical Application Schematic using the 0.7 to 0.96 GHz tuning set, M1 = 5.5 kΩ, M10 = 230 Ω,
M13 = 475 Ω, IDDQ = 160 mA, 50 Ω system impedance, FTEST = 0.83 GHz, TPKG HEAT SINK = -40 to +105 °C. Evaluation board losses are included within the
plots.
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Typical Operating Curves: 0.7 to 0.96 GHz Tune
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Typical Operating Curves: 0.7 to 0.96 GHz Tune
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Typical Operating Curves: 0.7 to 0.96 GHz Tune
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Typical Operating Curves: S-Parameters (0.7 to 0.96 GHz Tune)
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Typical Operating Curves: Stability Mu (0.7 to 0.96 GHz Tune)
Note: Mu factor ≥ 1.0 implies unconditional stability
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
VDD
M10
M9
VENABLE
M16
M1
Sets IDDQ
M17
Bias Control
2
11
L(series)
9
RF_OUT
8
7
6
5
4
M21
M20
M4
M2
Note: Spliced into standard evaluation
board immediately above M18
10
3
RF_IN
M13
M14
12
1
GRF5109 Standard Test Schematic
GRF5109 Evaluation Board Assembly Diagram
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Evaluation Board Assembly Diagram Reference: 0.7 to 0.96 GHz Tune
Component
Type
Manufacturer
Family
Value
Package Size
Substitution
M1 (See Curves)
Resistor
Various
5%
Sets IDDQ
0402
ok
M2
Inductor: High Q
Coilcraft
HP
5.1 nH
0402
ok
M4
Capacitor: High Q
Murata
GJM
12.0 pF
0402
ok
M9
Inductor
Murata
LQG
39 nH
0402
ok
M10
Resistor
Various
5%
230 Ω
0402
ok
M13
Resistor
Various
5%
475 Ω
0402
ok
M14
Inductor: High Q
Coilcraft
HP
18 nH
0402
ok
M16
Capacitor
Murata
GRM
0.1 μF
0402
ok
M17
Capacitor
Murata
GRM
100 pF
0402
ok
M20
Capacitor
Murata
GJM
5.1 pF
0402
ok
M21
Capacitor
Murata
GJM
39 pF
0402
ok
L(series)
Inductor: High Q
Coilcraft
HP
3.3 nH
0402
ok
Evaluation Board
PA-V3_RevA
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
GRF5109 Bias Resistor Selection Curves
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
3 x 3 mm QFN-16 Suggested PCB Footprint (Top View)
3 x 3 mm QFN-16 Package Dimensions
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
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Package Marking Diagram
• Line 1: “XXXX” = Device PART NUMBER.
• Line 2: “YY” = YEAR. “WW” = WORK WEEK the Device was assembled.
Tape and Reel Information
Guerrilla RF’s tape and reel specification complies with Electronics Industries Association (EIA) standards for “Embossed
Carrier Tape of Surface Mount Components for Automatic Handling” (reference EIA-481). See the following page for the
Tape and Reel Specification and Device Package Information table, which includes units per reel.
Devices are loaded with pins down into the carrier pocket with protective cover tape and reeled onto a plastic reel. Each
reel is packaged in a cardboard box. There are product labels on the reel, the protective ESD bag and the outside surface
of the box.
For the Tape and Reel Reference Table, please refer to: https://www.guerrilla-rf.com/prodFiles/Manufacturing/MN001.pdf
Cover Tape
D
Label
Carrier Tape
Tape and Reel Packaging with Reel Diameter Noted (D)
Pin 1 Quadrant
W
Q1 Q2
Q1 Q2
Q1 Q2
Q1 Q2
Q1
Q1
Q2
Feed Direction
P
Carrier Tape Width (W), Pitch (P), Feed Direction and Pin 1 Quadrant Information
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Revision History
Revision Date
Description of Change
March 7, 2022
Updated to New Format. Updated Package Marking Diagram. Changed Revision from “Released” to “Release A”.
March 18, 2022
Raised Supply Current (Leakage) “Max” from 150µA to 500µA. Raised Supply Current (Leakage) “Typical” from 30µA to 100µA.
March 24, 2023
Lowered IENABLE current typical value from 2.0 mA to 0.7 mA.
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GRF5109 28.5 dBm Power-LNA™ 0.1 to 2.2 GHz
RELEASE A DATA SHEET
Data Sheet Classifications
Data Sheet Status
Advance
Notes
S-parameter and NF data based on EM simulations for the fully packaged device using foundry-supplied transistor
S-parameters. Linearity estimates based on device size, bias condition and experience with related devices.
Preliminary
All data based on evaluation board measurements taken within the Guerrilla RF Applications Lab. Any MIN/MAX limits
represented within the data sheet are based solely on estimated part-to-part variations and process spreads. All parametric
values are subject to change pending the collection of additional data.
Release 0/
All data based on measurements taken with production-released material. TYP values are based on a combination of ATE and
bench-level measurements, with MIN/MAX limits defined using modelled estimates that account for part-to-part variations
and expected process spreads. Although unlikely, future refinements to the TYP/MIN/MAX values may be in order as multiple
lots are processed through the factory.
Release A-Z
All data based on measurements taken with production-released material derived from multiple lots which have been
fabricated over an extended period of time. MIN/MAX limits may be refined over previous releases as more statistically
significant data is collected to account for process spreads.
Information in this data sheet is specific to the Guerrilla RF, Inc. (“Guerrilla RF”) product identified.
This data sheet, including the information contained in it, is provided by Guerrilla RF as a service to its customers and may be used for informational purposes only by the
customer. Guerrilla RF assumes no responsibility for errors or omissions on this data sheet or the information contained herein. Information provided is believed to be accurate
and reliable, however, no responsibility is assumed by Guerrilla RF for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use.
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No license, whether express, implied, by estoppel, by implication or otherwise is granted by this data sheet for any intellectual property of Guerrilla RF, or any third party,
including without limitation, patents, patent rights, copyrights, trademarks and trade secrets. All rights are reserved by Guerrilla RF.
All information herein, products, product information, data sheets, and data sheet information are subject to change and availability without notice. Guerrilla RF reserves the
right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Guerrilla RF may further change its data sheet,
product information, documentation, products, services, specifications or product descriptions at any time, without notice. Guerrilla RF makes no commitment to update any
materials or information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from any future changes.
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Customers are solely responsible for their use of Guerrilla RF products in the Customer’s products and applications or in ways which deviate from Guerrilla RF’s published
specifications, either intentionally or as a result of design defects, errors, or operation of products outside of published parameters or design specifications. Customers should
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