KJ011N10T

KJ011N10T N-Channel Enhancement Mode MOSFET 1. Product Information 1.1 Features  Surface-mounted package  Low RDS(on) Trench Technology  TJ 175℃  MSL1 1.2 Applications  BMS appliances  High power inverter system  Motor Drives  Light electric vehicles 1.3 Quick reference  BV ≧ 100 V  RDS(ON) ≦ 1.2 mΩ @ VGS = 10 V  PD ≦ 430 W  RDS(ON) ≦ 1.65 mΩ @ VGS = 6 V  ID ≦ 460 A 2. Pin Description Pin Description 1 2,3,4,5,6,7,8 9 Gate(G) Source(S) Drain(D) Simplified Outline Symbol 9 D G 12345678 S Top View TOLL-8L www.kjx-tech.cn 1 Version 0.2 KJ011N10T 3. Limiting Values Symbol Parameter Conditions Min Max Unit VDS Drain-Source Voltage TC=25℃ 100 - V VGS Gate-Source Voltage TC=25℃ - ± 20 V TC=25℃, VGS=10V - 460 A ID* Drain Current (DC) TC=100℃, VGS=10V - 308 A Drain Current (Pulsed) TC=25℃, VGS=10V - 1840 A Power Dissipation TC=25℃ - 430 W -55 175 ℃ IDM*,** PD TJ, Tstg IS EAS Operating Junction and Storage Temperature Range Continuous-Source Current TC=25℃ - 460 A Single Pulsed Avalanche Energy VDD=75V, L=0.3mH - 1800 mJ RθJA** Thermal Resistance- Junction to Ambient - 40 ℃/W RθJC** Thermal Resistance- Junction to Case - 0.29 ℃/W Notes: * Pulse width  300 s, duty cycle  2% ** Surface Mounted on 1 in2 pad area, t  10 sec *** Limited by bonding wire 4. Marking Information Product Name Marking AYWWZZ KJ011N10T KJ011N10T XXXXXXXX 5. Ordering Code Product Name Package Reel Size Tape width Quantity KJ011N10T TOLL-8L 13" 24 mm 2000 Note: Note KUAIJIEXIN defines “Green” as lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900 ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500 ppm by weight; Follow IEC 61249-2-21 and IPC/JEDEC J-STD-020C) www.kjx-tech.cn 2 Version 0.2 KJ011N10T 6. Electrical Characteristics (T =25℃ Unless Otherwise Noted) A Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0 V, IDS=250 μA 100 - - V VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250 μA 2.8 - 3.5 V IDSS Drain Leakage Current VDS=80 V, VGS=0 V - - 1 μA IGSS Gate Leakage Current VGS=±20 V, VGS=0 V - - ±100 nA VGS=10 V, IDS=80 A - 1.0 1.2 mΩ VGS=6 V, IDS=80 A - 1.2 1.65 mΩ 1.1 V RDS(ON) a On-State Resistance Diode Characteristics VSD a Diode Forward Voltage ISD=30 A, VGS=0 V - 0.8 trr Reverse Recovery Time - 116 Qrr Reverse Recovery Charge VDS=50 V, IDS=30 A, VGS=0 V, di/dt=100 A/μs - 405 729 - 15662 - - 2102 - ns nC Dynamic Characteristics b Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 45 - td(on) Turn-on Delay Time - 64 - tr Turn-on Rise Time - 61 - td(off) Turn-off Delay Time - 221 - - 104 - - 284 - - 73 - - 85 - tf VGS=0 V, VDS=50 V Frequency=1 MHz VDS=50 V, VGEN=10 V, RG=6 Ω, IDS=30 A Turn-off Fall Time pF ns Gate Charge Characteristics b Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=50 V, VGS=10 V, IDS=30 A nC Notes: a: Pulse test; pulse width  300 s, duty cycle  2% b: Guaranteed by design, not subject to production testing www.kjx-tech.cn 3 Version 0.2 KJ011N10T 7. Typical Characteristics www.kjx-tech.cn 4 Version 0.2 KJ011N10T 7. Typical Characteristics (cont.) www.kjx-tech.cn 5 Version 0.2 KJ011N10T 7. Typical Characteristics (cont.) www.kjx-tech.cn 6 Version 0.2 KJ011N10T 8. Package Dimensions TOLL-8L Package E1 E3 D2 E1 A F L1 D3 H2 H1 D1 E2 H D H3 K L L3 L2 c E M b e θ A c E Dimensions in Millimeters Symbol Dimensions in Millimeters Symbol MIN. NOM. MAX. MIN. NOM. MAX. A 2.20 2.30 2.40 F 1.05 1.20 1.35 b 0.65 0.75 0.85 H 11.55 11.70 11.85 H1 6.03 6.18 6.33 D c 10.25 0.508 REF 10.40 10.55 H2 6.85 7.00 7.15 D1 2.85 3.00 3.15 H3 D2 2.95 3.10 3.25 K 4.25 4.40 4.55 L 1.55 1.70 1.85 D3 0.75 REF 3.00 BSC E 9.75 9.90 10.05 L1 0.55 0.70 0.85 E1 9.65 9.80 9.95 L2 0.45 0.60 0.75 E2 8.95 9.10 9.25 L3 1.00 1.15 1.30 E3 7.25 7.40 7.55 M e www.kjx-tech.cn θ 1.20 BSC 7 0.08 REF 8° 10° 12° Version 0.2