WPM9435-8/TR

WPM9435 WPM9435 P-Channel Enhancement Mode MOSFET www.willsemi.com Description The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Features z -30V/-5A,RDS(ON)= 36mŸ@VGS=- 10V z -30V/-4A,RDS(ON)= 53mŸ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z SOP – 8P package design Application z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch D D D D S S S G WPM9435 YYWW YYWW = Date Code WPM9435 = Specific Device Code Order information 3DUW1XPEHU WPM9435-8/TR http://www.willsemi.com 3DUW1XPEHU SOP-8P Page 1 6KLSSLQJ 4000/ Tape&Reel 0 Jul, 2018 Rev 1.5 WPM9435 PIN DESCRIPTION Pin Symbol Description 1 2 3 4 5 6 7 8 S S S G D D D D Source Source Source Gate Drain Drain Drain Drain Absolute Maximum Ratings (TA=25 unless otherwise specified) 3DUDPHWHU 6\PERO VDS Drain-Source voltage VGS Gate-Source Voltage ID Continuous Drain Steady-State TA=25ć Current Steady-State TA=70ć IDM Pulse Drain Current PD Power Dissipation TA=25ć TA=70ć TJ Operating Junction Temperature Range Tstg Storage Temperature Range RșJA Thermal Resistance-Junction to Ambient 9DOXH -30 ±20 -5.5 -4.4 -25 2.0 1.2 -55~150 8QLWV V V 62.5 ć/W A A W ć Electrical Characteristics (TA=25к Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. -2.0 -3.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage http://www.willsemi.com RDS(on) gfs VSD -30 -1.0 VDS=0V,VGS=±20V VDS=-24V,VGS=0V VDS=-24V,VGS=0V TJ=85к VDS= -5V,VGS =-4.5V ±100 -1 -10 -10 nA uA A VGS=-10V,ID=-5.0A VGS=-4.5V,ID=-4.0A VDS=- 5V,ID=-5A 0.036 0.053 8 0.046 0.066 IS=-1.3A,VGS =0V -0.79 -1.5 Page 2 V ȍ S 0 Jul, 2018 Rev 1.5 V WPM9435 Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 10 VDS=-15V,VGS=-10V ID= -3.5A tr td(off) Turn-Off Time nC 1.6 3.0 710 VDS=-15V,VGS=0V f=1MHz pF 115 100 td(on) Turn-On Time 18 VDD=-15V,RL=15ȍ IDŁ-1.0A,VGEN=-10V RG=6ȍ tf 8 18 8 18 25 50 25 35 Typical Performance Characteristis 24 RDS(ON)ON Resistance(mOhm) VGS=10V 150 ID,Drain Current(A) 20 VGS=6V 16 VGS=4V 12 8 VGS=3V 4 0 0 1 2 3 4 VDS,Drain-Source voltage(V) 5 VGS=4.5V 90 VGS=6V 60 V GS=10V 30 0 Drain Current VS Drain-Source voltage http://www.willsemi.com 120 5 10 15 ID, Drain Current(A) 20 Drain Current vs ON Resistance Page 3 0 Jul, 2018 Rev 1.5 nS WPM9435 25 VDS=2V 0.16 20 ID=-3A ID,Drain Current(A) RDS(ON) ON Resistance(Ohm) 0.20 0.12 0.08 15 10 5 0.04 0 0 2 4 6 8 VGS,Gate-Source Voltage(V) 10 1.5 2 3 4 5 6 VGS,Gate-Source Voltage(V) 1.6 Normalized On-Resistance IS, Source-Drain Current(A) 1 Drain Current VS Gate-Source Voltage Gate-Source Voltage vs ON Resistance 1.2 0.9 0.6 0.3 0.0 0.0 0 1.4 VGS=-10V VGS=-4.5V 1.2 1 ID=-5A 0.8 0.2 0.4 0.6 VDS,Drain-Source voltage(V) 0.8 0 50 75 100 125 150 175 Temperature (°C) On-Resistance vs. Junction Drain Current VS Source-Drain Current http://www.willsemi.com 25 Page 4 0 Jul, 2018 Rev 1.5 WPM9435 1200 10 VDS=-15V ID=-6A 9 8 1000 Capacitance (pF) Ciss -VGS (Volts) 7 6 5 4 3 2 800 600 400 Coss 200 1 Crss 0 0 0 2 4 6 8 10 12 14 16 0 5 10 -Qg (nC) 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 30 100Ps Power (W) -ID (Amps) RDS(ON) limited 1ms 0.1s 10ms 1 30 40 10Ps 10 25 Capacitance Characteristics Gate-Charge Characteristics 100 15 -VDS (Volts) 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 ZTJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZTJA.RTJA RTJA=40°C/W 1 10 100 1000 Single Pulse Power Rating Junction-toAmbient (Note E) Maximum Forward Biased Safe Operating Area (Note E) 10 0.1 Pulse Width (s) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Maximum Transient Thermal Impedance http://www.willsemi.com Page 5 0 Jul, 2018 Rev 1.5 WPM9435 Packaging Information SOP-8P Package Outline Dimension http://www.willsemi.com Page 6 0 Jul, 2018 Rev 1.5