HYG010N06NS1TA
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
Tab
60V/465A
RDS(ON)=0.75 mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen-Free Devices Available
Pin 8
(RoHS Compliant)
Pin 1
TOLL
Applications
Tab
Switching application
Power management for inverter systems
Battery management
Pin 1
Pin 2,3,4,5,6,7,8
N-Channel MOSFET
Ordering and Marking Information
Package Code
TA
TA:TOLL
G010N06
Date Code
XYMXXXXXX
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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V1.0
1
HYG010N06NS1TA
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
TJ
Junction Temperature Range
-55 to 175
°C
TSTG
Storage Temperature Range
-55 to 175
°C
Tc=25°C
465
A
Tc=25°C
1860
A
Tc=25°C
465
A
Tc=100°C
328.8
A
Tc=25°C
428.5
W
Tc=100°C
214.3
W
0.35
°C/W
45
°C/W
1527
mJ
IS
Source Current-Continuous(Body Diode)
Mounted on Large Heat Sink
IDM
Pulsed Drain Current *
ID
Continuous Drain Current
PD
Note:
Maximum Power Dissipation
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient **
EAS
SinglePulsed-Avalanche Energy ***
L=0.3mH
* Repetitive rating;pulse width limited by max.junction temperature.
** Surface mounted on 1in2 FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.
Electrical Characteristics(Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG010N06NS1
Unit
Min
Typ.
Max
60
-
-
V
-
-
1
μA
-
-
50
μA
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Drain-to-Source Leakage Current
VGS(th)
IGSS
RDS(ON)
VGS=0V,IDS= 250μA
VDS=60V,VGS=0V
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS= 250μA
2
3
4
V
Gate-Source Leakage Current
VGS=±20V,VDS=0V
-
-
±100
nA
Drain-Source On-State Resistance
VGS= 10V,IDS=100A
-
0.75
1
mΩ
ISD=100A,VGS=0V
-
0.83
1.2
V
-
87
-
ns
-
155
-
nC
Diode Characteristics
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=100A,dISD/dt=100A/μs
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2
HYG010N06NS1TA
Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
HYG010N06NS1
Min
Typ.
Max
Unit
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=300KHz
-
0.62
-
Ciss
Input Capacitance
VGS=0V,
-
14650
-
Coss
Output Capacitance
VDS=25V,
-
4426
-
Crss
Reverse Transfer Capacitance
Frequency=300KHz
-
112
-
td(ON)
Turn-on Delay Time
-
43
-
Tr
Turn-on Rise Time
VDD= 30V,RG=4.0Ω,
-
110
-
td(OFF)
Turn-off Delay Time
IDS=100A,VGS= 10V
-
103
-
-
122
-
-
200
-
-
64
-
-
38
-
Tf
Turn-off Fall Time
Gate Charge
Ω
pF
ns
Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=48V, VGS=10V, IDs=100A
nC
Note: *Pulse test,pulse width ≤ 300us,duty cycle ≤ 2%
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3
HYG010N06NS1TA
Typical Operating Characteristics
Figure 2: Drain Current
ID-Drain Current(A)
Power Dissipation (w)
Figure 1: Power Dissipation
Tc-Case Temperature(℃)
Tc-Case Temperature(℃)
Thermal
Zθjc
ID-Drain Current(A)
Impedance
Figure 4: Thermal Transient Impedance
Normalized Transient
Figure 3: Safe Operation Area
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
ID-Drain Current(A)
RDS(ON)-ON-Resistance(mΩ)
VDS-Drain-Source Voltage(V)
VDS-Drain-Source Voltage (V)
ID-Drain Current(A)
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V1.0
4
HYG010N06NS1TA
Typical Operating Characteristics(Cont.)
Figure 8: Source-Drain Diode Forward
IS-Source Current (A)
Normalized On-Resistance
Figure 7: On-Resistance vs. Temperature
Tj-Junction Temperature (℃)
VSD-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
C-Capacitance(pF)
VGS-Gate-Source Voltage (V)
12
VDS-Drain-Source Voltage (V)
QG-Gate Charge (nC)
Figure 12: Gate Charge Characteristics
ID,Drain Current(A)
VGS-Gate-Source Voltage (V)
Figure 11: Transfer Characteristice
VGS-Gate to Source Voltage (V)
Tj-Junction Temperature (℃)
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V1.0
5
HYG010N06NS1TA
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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V1.0
6
HYG010N06NS1TA
Device Per Unit
Package Type
Unit
Quantity
TOLL
Reel
1200
Package Information
TOLL
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V1.0
7
HYG010N06NS1TA
Carrier Tape
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V1.0
8
HYG010N06NS1TA
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmaxto TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time (tP)** within 5°C of the specified
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax)
Time 25°C to peak temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
60-120 seconds
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
217 °C
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
20** seconds
30** seconds
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
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V1.0
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HYG010N06NS1TA
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Volume mm³
Volume mm³
Thickness
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