BT134 Series
4A TRIACs
4 Quadrants TRIACs
ShenZhenHanKingyuan
Electronic CO.,Ltd
TRIACs
BT134 Series
4 Quadrants
ShenZhenHanKingyuan
Electronic CO.,Ltd
01.
2
1
1
2
3
3
TO-252
SOT-82(TO-126P)
1
2
1
2
3
3
TO-126
TO-251
FEATURES
IT(RMS): 4A
VGT: 1.5V
VDRM VRRM:800V
APPLICATIONS
Washing machine,vacuums, massager,solid state relay,AC Motor speed regulation and so on.
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PAGE.01/06
TRIACs
BT134 Series
4 Quadrants
ShenZhenHanKingyuan
Electronic CO.,Ltd
Absolute Maximum Ratings
02.
(Tj=25°C unless otherwise specifed)
Symbol Parameter
Conditions
Ratings
Unit
Repetitive Peak Off-State Voltage
BT134-600
600
V
IT(RMS)
R.M.S On-State Current
Tc=110°C
4
A
ITSM
Surge On-State Current
25/27
A
VDRM
VRRM
I²t
PG(AV)
IGM
Tj
TSTG
tp=16.7ms/ tp=10ms
I²t for fusing
Tp=10ms
3.1
A²s
Average Gate Power Dissipation
Tj=125°C
0.5
W
tp=20us Tj=125°C
2
A
Operating Junction Temperature
~40~125
°C
Storage Temperature
~40~150
°C
Peak Gate Current
Electrical Characteristics
(Tj=25°C unless otherwise specifed)
Symbol Parameter
Test Conditions
D
E
Unit
Tj=25°C
≤10
uA
Tj=125°C
≤0.5
mA
Tj=25°C
≤10
uA
Tj=125°C
≤0.5
mA
IT=5A tp=380us
≤1.7
V
gate non-trigger voltage
VD=12V,Tj=125°C
≥0.2
V
Holding current
VD=12V ,IGT=0.1A
IDRM
Repetitive Peak Off-State Current
IRRM
Repetitive Peak Reverse Current
VTM
Forward "on" voltage
VGD
IH
Value
VGT
Gate trigger voltage
IGT
Gate trigger current
di/dt
Critical-rate of rise of
commutation current.
dv/dt
Critical-rate of rise of commutation
voltage
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≤10
VD=12V
I,II,III
IV
I,II,III
IV
VD=12V,IGT=0.1A
≤1.5
mA
V
≤5
≤10
mA
≤10
≤25
mA
IT=6A ,IGT==0.2A,
dIg/dt=0.2A/us
TJ=125°C VD=2/3VDRM
Gate open circuit
≤15
≥5
≥50
A/us
≥10
A/us
≥50
V/us
PAGE.02/06
TRIACs
BT134 Series
4 Quadrants
ShenZhenHanKingyuan
Electronic CO.,Ltd
FIG1
FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
P(w)
6.6
IT(RMS) (A)
6
5.5
5
4.4
4
3.3
3
2.2
2
1.1
1
IT(RMS) (A)
0
0
03.
1
2
3
4
5
α=180°
Insulated
TO-251/TO-252
TO-126/ SOT-82
Tc (℃)
0
0
FIG3
25
50
75
100
125
4
5
FIG4
On-state characteristics (maximum
values)
Surge peak on-state current versus
number of cycles
ITM (A)
ITSM (A)
30
28
t=20ms
One cycle
24
Tj=Tjmax
10
20
16
12
1
8
Tj=25℃
4
0
1
10
Number of cycles
100
1000
0.1
0
FIG5
1
2
VTM (V)
3
FIG6
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp
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