BT136S-800E

BT136 Series 4A TRIACs 4 Quadrants TRIACs ShenZhenHanKingyuan Electronic CO.,Ltd TRIACs BT136 Series 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd 01. 2 1 1 2 3 3 TO-220C 1 TO-252 1 2 2 3 3 TO-251 TO-220F Insulated FEATURES IT(RMS): 4A VGT: 1.5V VDRM VRRM:600Vand800V APPLICATIONS Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 TRIACs BT136 Series 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings (Tj=25°C unless otherwise specifed) Symbol Parameter VDRM VRRM Conditions Ratings BT136-600 600 BT136-800 800 Tc=110°C 4 A 25/27 A Tp=10ms 3.1 A²s Tj=125°C 1 W tp=20us Tj=125°C 2 A Operating Junction Temperature ～40~125 °C Storage Temperature ～40~150 °C Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current ITSM I²t tp=16.7ms/ tp=10ms Surge On-State Current I²t for fusing PG(AV) Average Gate Power Dissipation IGM Tj TSTG Peak Gate Current Electrical Characteristics Symbol Parameter Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current VTM Forward "on" voltage VGD gate non-trigger voltage Holding current VGT Gate trigger voltage IGT Gate trigger current di/dt Critical-rate of rise of commutation current. dv/dt Critical-rate of rise of commutation voltage www.scr-ky.com Value D E I,II,III IV F G Unit ≤10 uA Tj=125°C ≤0.5 mA Tj=25°C ≤10 uA Tj=125°C ≤0.5 mA IT=5A tp=380us ≤1.7 V VD=12V, Tj=125°C ≥0.2 V ≤10 ≤25 VD=12V IV V Tj=25°C IT=100mA I,II,III Unit (Tj=25°C unless otherwise specifed) Test Conditions IDRM IH 02. VD=12V,IGT=0.1A ≤60 ≤1.5 mA V 5 10 25 50 mA 10 25 70 100 mA IT=6A ,IGT==0.2A, dIg/dt=0.2A/us TJ=125°C VD=2/3VDRM Gate open circuit ≤30 5 10 ≥50 A /us ≥10 A /us 50 200 V/us PAGE.02/06 03. TRIACs BT136 Series 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd FIG1 FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current 6 IT(RMS) (A) 6 5 5 4 4 3 3 2 2 1 1 P(w) α=180° TO-220C/TO-262 TO-251/ TO-252 TO-220F(Ins) 0 IT(RMS) (A) 0 1 2 3 4 5 Tc (℃) 0 0 25 FIG3 50 75 100 125 4 5 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles ITM (A) ITSM (A) 30 35 t=20ms One cycle 30 Tj=Tjmax 10 25 20 15 1 10 Tj=25℃ 5 0 1 10 Number of cycles 100 1000 0.1 0 1 FIG5 2 VTM (V) 3 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp