BTA16-800B

BTA/BTB16 Series 16A TRIACs 3 Quadrants 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB24 Series ShenZhenHanKingyuan Electronic CO.,Ltd 1 3 Quadrants 4 Quadrants TRIAC 1 2 3 TO-220A Insulated 2 01. 3 TO-220B Non-Insulated 2 1 1 2 3 3 TO-220F Insulated TO-263 FEATURES IT(RMS): 16A VGT: ≤1.5V VDRM VRRM:800Vand1000V APPLICATIONS Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 BTA/BTB16 Series ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings Symbol VDRM VRRM Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current ITSM Surge On-State Current I²t Ratings Unit BTA16/BTB16-600 800 V BTA16/BTB16-800 1000 V Tc=110°C 16 A 170/180 A tp=16.7ms/ tp=10ms Tp=10ms 116 A²s Average Gate Power Dissipation Tj=125°C 1 W Peak Gate Current tp=20us Tj=125°C 4 A Operating Junction Temperature ～40~125 °C Storage Temperature ～40~150 °C TSTG Electrical Characteristics Symbol Conditions I²t for fusing IGM Tj 02. (Tj=25°C unless otherwise specifed) IT(RMS) PG(AV) 3 Quadrants 4 Quadrants TRIAC (Tj=25°C unless otherwise specifed) Parameter Test Conditions Value SW CW BW C B Unit IDRM Repetitive Peak Off-State Current Tj=25°C ≤5 uA Tc=125°C ≤1 mA IRRM Repetitive Peak Reverse Current Tc=25°C ≤5 uA Tc=125°C ≤1 mA VTM Forward "on" voltage IT=23A, tp=380us 1.5 V VGT Gate trigger voltage VD=12V ,RL=30Ω ≤1.5 V di/dt Critical rate of rise of on- I,II,III F=100Hz, state current IV IG=2xIGT, tr≤100ns ≥50 A/us ≥10 A/us IGT Gate trigger current IH Holding current VGD Gate non-trigger voltage dv/dt Critical-rate of rise of commutation voltage www.scr-ky.com I,II,III IV VD=12V, RL=30Ω IT=0.2A VD=VDRM, TJ=125°C,RL=3.3K Ω TJ=125°C, VD=2/3VDRM, Gate open circuit ≤10 ≤25 ≤50 ≤25 ≤50 mA / / / ≤50 ≤100 mA ≤25 ≤35 ≤50 ≤25 ≤50 mA ≥0.2 ≥100 ≥400 ≥1000 V ≥200 ≥400 V/us PAGE.02/06 03. BTA/BTB16 Series ShenZhenHanKingyuan Electronic CO.,Ltd 3 Quadrants 4 Quadrants TRIAC FIG1 FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current IT(RMS) (A) 24 P(w) 24 α=180° 20 18 TO-220B (Non-Ins) TO-263 16 12 TO-220F(Ins) 12 TO-220A(Ins) 8 6 4 0 0 4 8 IT(RMS) (A) 12 16 20 Tc (℃) 0 0 25 FIG3 50 75 100 125 4 5 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles ITM (A) ITSM (A) 200 200 t=20ms 100 One cycle 160 Tj=125℃ 120 10 80 Tj=25℃ 40 Number of cycles 10 100 0 1 1000 1 0 1 FIG5 2 VTM (V) 3 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp