BTA20-800B

BTA/BTB20 Series 20A TRIACs 3 Quadrants 4 Quadrants ShenZhenHanKingyuan Electronic CO.,Ltd 1 3 Quadrants 4 Quadrants TRIAC 1 2 3 TO-220A Insulated 01. BTA/BTB20 Series ShenZhenHanKingyuan Electronic CO.,Ltd 2 3 TO-220B Non-Insulated 2 1 1 2 3 3 TO-220F Insulated TO-263 FEATURES IT(RMS): 20A VGT: ≤1.5V VDRM VRRM:800V~1200V APPLICATIONS Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 BTA/BTB20 Series ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings Symbol 3 Quadrants 4 Quadrants TRIAC 02. (Tj=25°C unless otherwise specifed) Parameter Conditions Ratings Unit VDRM VRRM Repetitive Peak Off-State Voltage BTA20-800 800 V BTA20-1200 1200 V IT(RMS) R.M.S On-State Current Tc=110°C 25 A ITSM Surge On-State Current 280/300 A I²t I²t for fusing 520 A²s PG(AV) Average Gate Power Dissipation Tj=125°C 1 W IGM Peak Gate Current 6 A Tj Operating Junction Temperature ～40~125 °C TSTG Storage Temperature ～40~150 °C tp=16.7ms/ tp=10ms Tp=10ms Tj=125°C Electrical Characteristics Symbol IDRM (Tj=25°C unless otherwise specifed) Parameter Test Conditions Repetitive Peak Off-State Current Value SW CW BW B Unit Tj=25°C 5 uA Tj=125°C 3 mA Tj=25°C 5 uA Tj=125°C 3 mA IRRM Repetitive Peak Reverse Current VTM Forward "on" voltage IT=35A tp=380us 1.55 V VGT Gate trigger voltage VD=12V ,RL=30Ω ≤1.5 V di/dt Critical rate of rise of on-state current F=120Hz,Tj=125°C IG=2xIGT,tr≤100ns ≥50 A/us ≥10 A/us IGT Gate trigger current IH Holding current VDG Gate non-trigger voltage www.scr-ky.com I,II,III IV I,II,III IV VD=12V RL=30Ω IT=0.2A ALL VD=VDRM TJ=125°C ≤10 ≤40 ≤35 ≤50 ≤50 mA / / ≤100 mA ≤60 ≤80 ≤80 mA ≥0.2 V PAGE.02/06 03. BTA/BTB20 Series ShenZhenHanKingyuan Electronic CO.,Ltd 3 Quadrants 4 Quadrants TRIAC FIG1 FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current P(w) 30 IT(RMS) (A) 30 25 α=180° 25 TO-220B(Non-Ins) 20 20 15 TO-263 15 10 TO-220F(Ins) 10 5 TO-220A(Ins) 5 0 0 IT(RMS) (A) 8 12 4 16 20 Tc (℃) 0 0 25 FIG3 50 75 100 125 4 5 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles ITSM (A) ITM (A) 250 200 t=20ms One cycle 100 200 Tj=125℃ 150 100 10 50 Tj=25℃ Number of cycles 10 100 0 1 1000 1 0 FIG5 VTM (V) 3 2 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp