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MMBT5401

MMBT5401

  • 厂商:

    HXY(华轩阳)

  • 封装:

    SOT23-3

  • 描述:

    通用三极管 PNP 150V 600mA 350mW hFE=100~300

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT5401 数据手册
HUAXUANYANG HXY MMBT5401 ELECTRONICS CO.,LTD PNP Plastic-Encapsulate Transistors FEATURES z z Collector Current: IC=0.6A Power Dissipation of 300mw C E B SOT-23 Package Marking and Ordering Information Product ID Pack MMBT5401 SOT-23 Marking 2L C Qty(PCS) 3000 B E MAXIMUM X RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation PC 300 mW Thermal Resistance From Junction To Ambient RΘJA 416 ℃/W Temperature Junction Jun Tj 150 ℃ Storage Temperature Tstg Shenzhen HuaXuanYang Electronics CO.,LTD -55~+150 ℃ www.hxymos.com HUAXUANYANG HXY MMBT5401 ELECTRONICS CO.,LTD PNP Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions Min Typ Max Unit IC=-100µA, IE=0 -160 V IC=-1mA, IB=0 -150 V IE=-10µA, IC=0 -5 V VCB=-120V, IE=0 -0.1 μA VEB=-4V, IC=0 -0.1 μA hFE(1) * VCE=-5V, IC=-1mA 80 hFE(2) * VCE=-5V, IC=-10mA 100 hFE(3) * VCE=-5V, IC=-50mA 50 300 VCE(sat)1* IC=-10mA, IB=-1mA -0.2 V * IC=-50mA, IB=-5mA -0.5 V VBE(sat)1 * IC=-10mA, IB=-1mA -1 V VBE(sat)2 * IC=-50mA, IB=-5mA -1 V VCE(sat)2 Transition frequency fT VCE=-5V,IC=-10mA, f=30MHz 100 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. Typical Characteristics Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG HXY ELECTRONICS CO.,LTD Shenzhen HuaXuanYang Electronics CO.,LTD MMBT5401 PNP Plastic-Encapsulate Transistors www.hxymos.com HUAXUANYANG HXY MMBT5401 ELECTRONICS CO.,LTD PNP Plastic-Encapsulate Transistors SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HUAXUANYANG HXY MMBT5401 ELECTRONICS CO.,LTD PNP Plastic-Encapsulate Transistors Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein in such applications. ■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein. ■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA XUAN YANG ELECTRONICS CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the HUA XUAN YANG ELECTRONICS product that you intend to use. Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com
MMBT5401
物料型号:MMBT5401 器件简介:MMBT5401是一款PNP型塑料封装晶体管,采用SOT-23封装。

引脚分配: - 集电极(C) - 发射极(E) - 基极(B)

参数特性: - 集电极-基极电压(VCBO):-160V - 集电极-发射极电压(VCEO):-150V - 发射极-基极电压(VEBO):-5V - 集电极电流(Ic):最大-600mA - 集电极功耗(Pc):最大300mW - 热阻(ROJA):416°C/W - 结温(Tj):最高150°C - 存储温度(Tstg):-55°C至+150°C

功能详解: - 该晶体管具有PNP结构,适用于多种电子电路。 - 其电气特性包括集电极-基极击穿电压、集电极-发射极击穿电压、发射极-基极击穿电压、集电极截止电流、发射极截止电流、直流电流增益(hFE)、集电极-发射极饱和电压(VCE(sat))、基极-发射极饱和电压(VBE(sat))和转换频率(fr)。

应用信息: - 该文档强调了产品不适用于需要极高可靠性的应用,如生命支持系统、飞机控制系统等。 - 华轩阳电子不对超出产品规格的参数值导致的设备故障承担责任。 - 产品规格仅描述了产品独立状态下的性能、特性和功能,不保证在客户产品或设备中的表现。 - 华轩阳电子致力于提供高质量、高可靠性的产品,但所有半导体产品都有一定的故障概率。

封装信息: - SOT-23封装的尺寸和建议的焊盘布局。
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