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BSS138

BSS138

  • 厂商:

    GOODWORK(固得沃克)

  • 封装:

    SOT23-3

  • 描述:

    MOSFETs N-Channel SOT23-3 Vds=50V Vgss=±20V Id=220mA Pd=350mW

  • 数据手册
  • 价格&库存
BSS138 数据手册
BSS138 SOT-23 Plastic-Encapsulate MOSFETS FEATURE High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z z High saturation current capability A M D SOT-23 e e C a E 1. GATE L1 L 2. SOURCE HE 3. DRAIN Equivalent Circuit SOT-23 mechanical data UNIT Marking mm Type number Marking code SS BSS138 mil A E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 max 43 6 55 118 102 20 77 min 3 47 110 12 67 35 C D 87 e M L L1 a 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 22 14 0.0 (ref) (ref) 6 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 50 Continuous Gate-Source Voltage VGSS ±20 Unit V Continuous Drain Current ID 0.22 Power Dissipation PD 0.35 W RθJA 357 ℃/W Tj 150 Tstg -55 ~+150 Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature A ℃ REV 1.0 2021 JAN PAGE:1/3 BSS138 Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 µA VDS =30V, VGS =0V 100 nA 1.50 V 50 V On characteristics Gate-threshold voltage (note 1) VGS(th) Static drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gFS VDS =VGS, ID =1mA 0.80 VGS =10V, ID =0.22A 1.7 VGS =4.5V, ID =0.22A VDS =10V, ID =0.22A 3.50 6 0.12 Ω S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 27 VDS =25V,VGS =0V, f=1MHz pF 13 6 Switching characteristics Turn-on delay time (note 1,2) Rise time (note 1,2) Turn-off delay time (note 1,2) Fall time (note 1,2) td(on) 5 tr VDD=30V, VDS=10V, 18 td(off) ID =0.29A,RGEN=6Ω 36 tf ns 14 Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V 1.4 V Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. REV 1.0 2021 JAN PAGE:2/3 RATING AND CHARACTERISTIC CURVES (BSS138) Output Characteristics Transfer Characteristics 2.0 1.2 Ta=25℃ VDS=3V VGS=3V,4V,5V,6V Pulsed Pulsed VGS=10V 1.0 VGS=5V ID VGS=4V DRAIN CURRENT DRAIN CURRENT ID (A) (A) 1.5 1.0 Ta=25℃ 0.8 Ta=100℃ 0.6 0.4 VGS=3V 0.5 0.2 VGS=2V 0.0 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 1 2 4 VGS 5 (V) RDS(ON) —— VGS RDS(ON) —— ID 1.5 1.4 3 GATE TO SOURCE VOLTAGE 6 Ta=25℃ Pulsed Pulsed ID=500mA 5 1.3 ( ) ( ) VGS=4.5V RDS(ON) 1.1 ON-RESISTANCE ON-RESISTANCE RDS(ON) 1.2 1.0 0.9 VGS=10V 0.8 4 3 Ta=100℃ 2 0.7 1 0.6 Ta=25℃ 0.5 0 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 1.0 0 (A) 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) Threshold Voltage IS —— VSD 2.0 1 Ta=100℃ Ta=25℃ 0.01 1E-3 0.2 0.4 0.6 1.5 VTH 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed 0.8 1.0 SOURCE TO DRAIN VOLTAGE VSD (V) 1.2 1.4 ID=250uA 1.0 0.5 0.0 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) REV 1.0 2021 JAN PAGE:3/3
BSS138 价格&库存

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BSS138
    •  国内价格
    • 50+0.07984
    • 500+0.07007
    • 3000+0.05470
    • 6000+0.05141
    • 30000+0.04865
    • 45000+0.04709

    库存:40997

    BSS138
    •  国内价格
    • 20+0.07104
    • 200+0.06624
    • 500+0.06144
    • 1000+0.05664
    • 3000+0.05424
    • 6000+0.05088

    库存:923