CMSA80P06

CMSA80P06 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The CMSA08P06 uses advanced BVDSS RDSON ID -60V 15mΩ -80A technology to provide excellent RDS (ON) . This device is suitable Applications to be used as the low side FET Load Switch in SMPS,load switching and Power Management in Notebook Computer,Portable general purpose. Equipment and Battery Powered Systems. Features DFN-8 5x6 Pin Configuration Fast switching speed D D D D D Lower On-resistance 100% EAS Guaranteed S Simple Drive Requirement Pin 1 Absolute Maximum Ratings Symbol Parameter S S G G S DFN-8 5x6 Type Package Marking CMSA80P06 DFN-8 5*6 CMSA80P06 Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current -80 A IDM Pulsed Drain Current -240 A 1 EAS Single Pulse Avalanche Energy 480 mJ PD@TC=25℃ Total Power Dissipation 95 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Junction-to-Ambient RθJC Junction-to-Case CA03R1 www.cmosfet.com Typ. Max. Unit --- 62 ℃/W --- 1.3 ℃/W Page 1 of 2 CMSA80P06 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Min. Typ. Max. Unit VGS=0V , ID=-250uA Conditions -60 --- --- V VGS=-10V, ID=-28A --- --- 15 VGS=-4.5V, ID=-20A --- --- 19 Gate Threshold Voltage VGS=VDS , ID =-250uA -1 --- -3 V IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25℃ --- --- -1 uA IGSS Gate-Source Leakage Current VGS = ±20V , VDS=0V --- --- ±100 nA mΩ gfs Forward Transconductance VDS=-10V , ID=-28A --- 40 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.5 --- Ω Qg Total Gate Charge --- 88 --- Qgs Gate-Source Charge --- 11 --- Qgd Td(on) Tr Td(off) Tf Gate-Drain Charge VDS=-30V , ID=-17A VGS=-10V Turn-On Delay Time --- 31 --- --- 14 --- Rise Time VDD=-30V, RG=6Ω --- 12 --- Turn-Off Delay Time ID=-1A , RL =30Ω , VGEN =-10V --- 110 --- nC ns Fall Time --- 61 --- Ciss Input Capacitance --- 7600 --- Coss Output Capacitance --- 501 --- Crss Reverse Transfer Capacitance --- 291 --- Min. Typ. Max. Unit --- --- -80 A --- --- -240 A --- --- -1.2 V VDS=-30V, VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IF =-28A Note : 1.The test condition is VDD=30V , VGS=10V , L=0.5mH , IAS=44A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA03R1 www.cmosfet.com Page 2 of 2