2N7002K

SOT-23 Plastic-Encapsulate MOSFETs 2N7002K MOSFET(N-Channel) V(BR)DSS SOT-23 ID RDS(on)MAX 3  2Ω@10V  60 V 300mA 2.8 Ω@4.5V   1. GATE 2. SOURCE 3 1 2 . DRAIN FEATURE z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected APPLICATION z Load Switch for Portable Devices z DC/DC Converter M$5.,1* Equivalent circuit 7002/702* MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Parameter Symbol VDS VGS Value Drain-Source voltage  Gate-Source voltage Unit 60 V ±20 V ID Drain Current 300 mA PD Power Dissipation 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA Thermal Resistance fromJunction to Ambient 1/4 357 ℃ /W www.realchip.net SOT-23 Plastic-Encapsulate MOSFETs 2N7002K MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage* Zero Gate Voltage Drain Current Gate –Source leakage current Drain-Source On-Resistance* VDS VGS = 0V, ID =250µA 60 VGS(th) VDS =VGS, ID =1mA 1.1 IDSS VDS =48V,VGS = 0V IGSS1 V 2.1 V 1 µA VGS =±20V, VDS = 0V ±10 µA IGSS2 VGS =±10V, VDS = 0V ±200 nA IGSS3 VGS =±5V, VDS = 0V ±100 nA RDS(on) 1.6 VGS = 4.5V, ID =250mA 2 2.8 Ω VGS =10V,ID =250mA 1.6 2 Ω 1.2 V Diode Forward Voltage VSD VGS=0V, IS=100mA Recovered charge Qr VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS 30 nC Dynamic Characteristics** Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz 40 pF 30 pF 10 pF 10 ns 15 ns Switching Characteristics** Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Reverse recovery Time trr VGS=10V,VDD=50V,RG=50Ω, RGS=50Ω, RL=250Ω VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/µS 30 ns GATE-SOURCE ZENER DIODE Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain) ±21.5 ±30 V Notes : *Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. **These parameters have no way to verify. 2/4 www.realchip.net SOT-23 Plastic-Encapsulate MOSFETs 2N7002K Typical Characteristics Output Characteristics Transfer Characteristics 1.2 1.2 Ta=25℃ VDS=3V VGS=5V,6V,7V,10V Pulsed Pulsed (A) (A) VGS=4V DRAIN CURRENT DRAIN CURRENT ID ID 0.8 VGS=3V 0.4 0.0 0.8 Ta=100℃ Ta=25℃ 0.4 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 2 4 8 6 GATE TO SOURCE VOLTAGE (V) VGS (V) RDS(ON) —— VGS RDS(ON) —— ID 10 5 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 RDS(ON) 3 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( ) ( ) 4 2 VGS=4.5V ID=500mA 6 4 2 1 VGS=10V 0 0 300 0 600 900 DRAIN CURRENT ID 1200 1500 0 (mA) 2 4 8 VGS 10 (V) Threshold Voltage IS —— VSD 2 1 6 GATE TO SOURCE VOLTAGE 1.8 Pulsed VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.6 Ta=25℃ 0.01 1.4 ID=250uA 1.2 1.0 0.8 0.6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 1.4 0.4 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3/4 100 Tj 125 ( ℃) www.realchip.net SOT-23 Plastic-Encapsulate MOSFETs 2N7002K SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout 4/4 www.realchip.net