BT151-600R

BT151 Series 12A SCRs Standard SCRs ShenZhenHanKingyuan Electronic CO.,Ltd ShenZhenHanKingyuan Electronic CO.,Ltd SCRs BT151 Series Standard SCRs 01. 2 1 1 2 3 3 TO-220C TO-252 2 1 1 2 Sensitive Gate SCR 3 3 TO-251 TO-263 FEATURES IT(RMS):12A VGT: 1V VDRM VRRM:600Vand800V APPLICATIONS Washing machine,vacuums, massager,solid state relay，AC Motor speed regulation and so on. www.scr-ky.com PAGE.01/06 SCRs BT151 Series Standard SCRs ShenZhenHanKingyuan Electronic CO.,Ltd Absolute Maximum Ratings 02. (Tj=25°C unless otherwise specifed) Symbol Parameter Conditions Ratings Unit VDRM VRRM Repetitive Peak Off-State Voltage BT151 600 V IT(RMS) R.M.S On-State Current Tc=105°C 12 A IT(AV) On-state average current TC=105°C 7.5 A ITSM Surge On-State Current Tp=10ms/tp=8.3ms 120/132 A I²t I²t for fusing Tp=10ms 75 A²s PGM Peak Gate Power Dissipation Tj=125°C 2 W PG(AV) Average Gate Power Dissipation Tj=125°C 0.5 W Tj Operating Junction Temperature ～40~125 °C TSTG Storage Temperature ～40~150 °C Electrical Characteristics (Tj=25°C unless otherwise specifed) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current VTM Forward "on" voltage VGT Value Unit Tc=25°C ≤10 uA Tc=125°C ≤1 mA Tc=25°C ≤10 uA Tc=125°C ≤1 mA IT=23A, tp=380us ≤1.7 V Gate trigger voltage VD=12V ,RL=30Ω ≤1.0 V di/dt Critical rate of rise of on-state current Tj=125°C, IG=2xIGT, tr≤100ns ≥50 A/us IGT Gate trigger current VD=12V, IT=0.1A ≤20 mA IL Latching current IG=1.2IGT ≤40 mA IH Holding current IT=0.1A ≤30 mA VGD Gate non-trigger voltage ≥0.25 V dv/dt Critical-rate of rise of commutation voltage VD=VDRM, TJ=125°C,RL=3.3KΩ,RGK=1KΩ TJ=125°C, VD=2/3VDRM, Gate open circuit ≥200 V/us Rth(j-c) Thermal resistance Junction to case 1 °C/W Rth(j-a) Thermal resistance Junction to ambient 50 °C/W www.scr-ky.com Test Conditions PAGE.02/06 03. SCRs BT151 Series Standard SCRs ShenZhenHanKingyuan Electronic CO.,Ltd FIG1 FIG2 RMS on-state current versus case temperature Maximum power dissipation versus RMS on-state current IT(RMS) (A) 18 P(w) 20 α=180° 15 TO-220C/ TO-263 TO-251/ TO-252 15 12 10 9 6 5 3 0 0 3 6 IT(RMS) (A) 9 12 Tc (℃) 0 0 16 25 FIG3 50 75 100 125 4 5 FIG4 On-state characteristics (maximum values) Surge peak on-state current versus number of cycles ITM (A) ITSM (A) 100 140 tp=10ms One cycle 120 Tj=125℃ 100 80 10 60 40 Tj=25℃ Tj=25 20 0 1 10 Number of cycles 100 1000 1 0 FIG5 1 VTM (V) 3 2 FIG6 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp