SI2310

SI2310 SOT-23 Plastic-Encapsulate MOSFETS FEATURE High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z z High saturation current capability A M D SOT-23 e e 1. GATE C a E L1 L 2. SOURCE HE 3. DRAIN Equivalent Circuit SOT-23 mechanical data UNIT Marking mm Type number Marking code SI2310 S10 mil A C E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 max 43 6 55 118 102 20 77 min 3 47 110 12 67 35 D 87 e M L L1 a 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 22 14 0.0 (ref) (ref) 6 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) IDM 10 A Power Dissipation PD 1.5 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) REV 1.0 2021 JAN PAGE:1/3 SI2310 Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V,VGS = 0V Gate-body leakage current IGSS VGS =±20V, VDS = 0V Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA Drain-source on-resistance (note 3) RDS(on) 60 V 0.5 VGS =10V, ID =3A 78 VGS =4.5V, ID =3A Forward tranconductance (note 3) gFS VDS =15V, ID =2A Diode forward voltage (note 3) VSD IS=3A, VGS = 0V 1 µA ±100 nA 2 V 105 mΩ 125 mΩ S 1.4 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 247 pF 34 pF 19.5 pF 6 ns VGS=10V,VDD=30V, 15 ns ID=1.5A,RGEN=1Ω 15 ns tf 10 ns Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd 1.3 nC VDS =30V,VGS =0V,f =1MHz SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDS =30V,VGS =4.5V,ID =3A Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. REV 1.0 2021 JAN PAGE:2/3 RATING AND CHARACTERISTIC CURVES (SI2310) Transfer Characteristics Output Characteristics 15 8 Pulsed VDS=5.0V Pulsed (A) DRAIN CURRENT DRAIN CURRENT VGS=2.5V 5 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS Ta=100℃ 4 2 VGS=2.0V 0 Ta=25℃ 6 ID 10 ID (A) VGS=5V、4V、3.0V 0 5 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID 140 RDS(ON) 400 —— 4 VGS (V) VGS Ta=25℃ Ta=25℃ (mΩ) VGS=4.5V 300 RDS(ON) 100 ON-RESISTANCE RDS(ON) (mΩ) 120 ON-RESISTANCE Pulsed Pulsed 80 VGS=10V 60 200 ID=3A 100 40 20 0 0.5 2 4 6 DRAIN CURRENT 8 ID 10 0 IS —— VSD 10 2 4 6 8 GATE TO SOURCE VOLTAGE (A) VGS 10 (V) Threshold Voltage 1.2 Ta=25℃ Pulsed (V) VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 1.1 0.1 0.01 1.0 ID=250uA 0.9 0.8 0.7 0.6 1E-3 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 VSD (V) 1.2 0.5 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) REV 1.0 2021 JAN PAGE:3/3