CMD75N04

CMD75N04/CMU75N04 N-Channel Enhancement Mode MOSFET General Description Product Summary The 75N04 uses innovative BVDSS RDSON ID 40V 7.5mΩ 75A packaging technology to provide excellent RDS(ON). This device Applications is suitable for use as a wide variety DC/DC converter of applications. Powertrain Management Solenoid and Motor Drivers Features TO-252/251 Pin Configuration N-channel Enhancement mode D Low On-Resistance 100% Avalanche tested G S RoHS Compliant TO-252 (CMD75N04) G D S TO-251 (CMU75N04) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current 75 A ID@TC=100℃ Continuous Drain Current 53 A IDM Pulsed Drain Current 300 A EAS Single Pulse Avalanche Energy 200 mJ PD@TC=25℃ Total Power Dissipation 60 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction -Case CA01S1 www.cmosfet.com Typ. Max. Unit --- 62 ℃/W --- 2.6 ℃/W Page 1 of 2 CMD75N04/CMU75N04 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Conditions Min. Typ. Max. Unit V VGS=0V , ID=250μA 40 --- --- VGS=10V , ID=20A --- 6.5 7.5 VGS=4.5V, ID=20A --- 8 11 VGS=VDS , ID =250uA 1 --- 3 VDS=40V , VGS=0V , Tj =25℃ --- --- 1 VDS=18V , VGS=0V , Tj =85℃ --- --- 20 ±100 nA mΩ V uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS =±20V , VDS=0V --- --- gfs Forward Transconductance VDS=5 V , ID=20A --- 30 --- S --- 2 --- Ω --- 25 33 --- 12 --- --- 3.5 --- Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Tr Td(off) Tf VDS=0V , VGS=0V , f=1MHz VDD=32V , VGS=0 to 10V, ID=75A Turn-On Delay Time --- 7 --- Rise Time VDD=20V , VGS =10V , RG=3.5Ω --- 10 --- Turn-Off Delay Time ID =75A --- 6 --- nC ns Fall Time --- 8 --- Ciss Input Capacitance --- 2400 --- Coss Output Capacitance --- 490 --- Crss Reverse Transfer Capacitance --- 15 --- Min. Typ. Max. Unit --- --- 1.2 V VDS=25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol VSD Parameter Diode Forward Voltage Conditions VGS=0V , IF = 20A Note : 1.The test condition is VDD=20V,VGS=10V,L=0.5mH,I AS=28A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA01S1 www.cmosfet.com Page 2 of 2