CMSA150P03

CMSA150P03 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The CMSA150P03 uses advanced trench BVDSS RDSON ID -30V 5.8mΩ -150A technology to provide excellent RDS(ON). This device is ideal for load switch and Applications Load Switch battery protection applications. Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems. Features DFN-8 5x6 Pin Configuration Fast switching speed Lower On-resistance D D D D D 100% EAS Guaranteed G Simple Drive Requirement S Pin 1 S S G S DFN-8 5x6 CMSA150P03 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Sou ce Voltage ±20 V Continuous Drain Current -150 A Pulsed Drain Current -600 A 666 mJ Total Power Dissipation 110 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 ID@TC=25 IDM EAS PD@TC=25 Single Pulse Avalanche Energy 1 Thermal Data Symbol CA04O2 R JA R JC Parameter Junction-to-Ambient(Steady-State) Junction-to-Case www.cmosfet.com Typ. Max. Unit --- 55 /W --- 1.5 /W Page 1 of 2 CMSA150P03 P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25℃ , unless otherwise noted) Symbol Parameter Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V VGS=-10V, ID=-20A --- 4.6 5.8 VGS=-4.5V, ID=-20A --- 5.6 8 Gate Threshold Voltage VGS=VDS , ID =-250uA -1 --- -3 V IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA IGSS Gate-Source Leakage Current VGS =±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-10V , ID=-10A --- 28 --- S --- 20 --- Ω --- 100 --- --- 20 --- BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Td(on) Tr Td(off) Tf Gate-Drain Charge Conditions VDS=0V , VGS=0V , f=1MHz VDS=-10V , ID=-20A VGS=-4.5V Turn-On Delay Time --- 30 --- --- 20 --- Rise Time VDD=-10V, VGEN =-4.5V --- 50 --- Turn-Off Delay Time ID=-1A , RG=3Ω , RL =0.5Ω --- 100 --- m nC ns Fall Time --- 40 --- Ciss Input Capacitance --- 9400 --- Coss Output Capacitance --- 800 --- Crss Reverse Transfer Capacitance --- 520 --- Min. Typ. Max. Unit VDS=-10V, VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , I F =-1A --- --- -150 A --- --- -600 A --- --- -1.2 V Note : 1.The EAS data shows Max. rating . The test condition is VDD =-20V,VGS=-10V,L=1 mH,ID =-36.5A This product has been designed and qualified for the counsumer market. Cmos assumes no liability for customers' product design or applications. Cmos reserver the right to improve product design ,functions and reliability wihtout notice. CA04O2 www.cmosfet.com Page 2 of 2