LLAM-900-R5BH

DATASHEET Photon Detection LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Excelitas’ LLAM-1550E InGaAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities. Key Features • System bandwidth of 50 MHz and 200MHz • Ultra low noise equivalent power (NEP) • Spectral response range: • Si APD: 400 to 1100 nm • InGaAs APD: 1100 to 1700 nm • Typical power consumption: 150 mW (without TEC powered on) • ±5 V amplifier operating voltages • 50 Ω AC load capability (AC-Coupled) • Hermetically-sealed TO-66 flange package for additional heat sinking • High reliability • Light entry angle, over 130° • Model 1060E and 1550E exhibits enhanced damage threshold • RoHS-compliant • Available in both COTS and custom variations Applications • LIDAR • Range finding • Laser designation • Confocal microscopy • High-speed, extreme low-light detection • Distributed temperature sensing (DTS) • Analytical instrumentation • High-speed, free-space optical communication www.excelitas.com LLAM Series-Rev.2-2022.01 Page 1 of 11 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Table 1. Performance Specifications – LLAM 900/1060(E) Models (900 nm and YAG-enhanced Si APD) Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled and TEC off LLAM-900-R5BH Detector Type Parameter Photosensitive Area Active diameter Active area Field of View Nominal field of view α (see Figure 8) Nominal field of view α’ (see Figure 8) System bandwidth, f-3dB Temperature coefficient of Vop for constant gain Vop for specified responsivity Responsivity at 830 nm at 900 nm at 1064 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 2) Average from 100 kHz to f-3dB, ∆f = 1.0 Hz at 830 nm at 900 nm at 1064 nm Output spectral noise voltage Averaged from 100 kHz to f-3dB Output impedance Rise time, tr ( = 830, 900 and 1064 nm) 10% to 90% points Fall time, tf ( = 830, 900 and 1064 nm) 90% to 10% points Recovery time after overload (Note 3) Output voltage swing (1 kΩ load) (Note 4) Output voltage swing (50 Ω load) (Note 4) DC output offset voltage APD temperature (case at room temperature) Thermistor value (Note 5) Positive supply current (V+) Negative supply current (V-) Min 175 180 LLAM-1060-R8BH LLAM-1060E-R8BH (C30954EH APD) Min Typical Max Units 0.5 0.2 0.8 0.5 mm mm² 139 142 200 0.7 Note 1 138 143 200 2.2 Note 1 Degrees (C30902EH APD) Typical Max 175 260 275 460 400 325 370 200 8.2 12 33 435 kV/W kV/W kV/W kΩ 35 40 55 65 30 25 50 90 80 150 fW/Hz fW/Hz fW/Hz 15 40 25 50 10 40 30 50 nV/Hz Ω 33 2 2 ns 2 2 ns 150 2 0.7 -1 -10 MHz V/˚C V 3 0.9 0.25 5.1±5% 20 10 1 85 35 20 150 2 0.7 -1 -10 3 0.9 0.25 1 85 5.1±5% 20 10 35 20 ns Vpp Vpp VDC ⁰C kΩ mA mA Note 1: A specific value of Vop within the specified range will be supplied with each device. Note 2: NEP is calculated as the output spectral noise voltage divided by the typical responsivity. Note 3: 0 dBm with 250ns pulses. Note 4: Pulsed operation, AC-coupled Note 5: The temperature of the thermistor in Kelvin can be calculated using the following equation: β T[K] = ln(𝑅/𝑟 ),where R is the measured thermistor resistance in Ω, 𝛽 = 3200, R 0 = 5100 Ω, T0 = 298.15 𝐾 and − r∞ = R 0 e β T0 ∞ ≅ 0.1113. www.excelitas.com Page 2 of 10 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Table 2. Performance Specifications − LLAM-1550(E) Models (1550 nm peak response InGaAs APD) Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled and TEC off Detector type Parameter Photosensitive Area Active diameter Active area Field of View Nominal field of view α (see Figure 8) Nominal field of view α’ (see Figure 8) System bandwidth, f-3dB Temperature coefficient of Vop for constant gain Vop for specified responsivity Responsivity at 1300 nm at 1550 nm Rf (Internal feedback resistor) Noise equivalent power (NEP) (Note 2) Average from 100 kHz to f-3dB, ∆f = 1.0 Hz at 1300 nm at 1550 nm Output spectral noise voltage Averaged from 100 kHz to f-3dB Output impedance Rise time, tr ( = 1300 and 1550 nm) 10% to 90% points Fall time, tf ( = 1300 and 1550 nm) 90% to 10% points Recovery time after overload (Note 3) Output voltage swing (1 kΩ load) (Note 4) Output voltage swing (50 Ω load) (Note 4) DC output offset voltage APD temperature (case at room temperature) Thermistor value (Note 5) Positive supply current (V+) Negative supply current (V-) LLAM-1550-R2AH LLAM-1550E-R2AH (C30662EH APD) Min Typical Max LLAM-1550-R08BH LLAM-1550E-R08BH (C30645EH APD) Min Typical Max Units 0.2 0.03 0.08 0.005 mm mm² 140 141 50 0.2 Note 1 140 141 175 0.2 Note 1 Degrees 40 40 150 70 40 300 340 68 33 70 80 90 12 kV/W kV/W kΩ 150 130 180 160 250 220 375 330 fW/Hz fW/Hz 45 40 55 50 20 40 30 50 nV/Hz Ω 33 7 2 ns 7 2 ns 150 2 0.7 -1 -10 MHz V/˚C V 3 0.9 0.25 5.1±5% 20 10 1 85 35 20 150 2 0.7 -1 -10 3 0.9 0.25 1 85 5.1±5% 20 10 35 20 ns Vpp Vpp VDC ⁰C kΩ mA mA Note 1: A specific value of Vop within the specified range will be supplied with each device. Note 2: NEP is calculated as the output spectral noise voltage divided by the typical responsivity. Note 3: 0 dBm with 250ns pulses. Note 4: Pulsed operation, AC-coupled Note 5: The temperature of the thermistor in Kelvin can be calculated using the following equation: β T[K] = ln(𝑅/𝑟 ),where R is the measured thermistor resistance in Ω, 𝛽 = 3200, R 0 = 5100 Ω, T0 = 298.15 𝐾 and − r∞ = R 0 e β T0 ∞ ≅ 0.1113. www.excelitas.com Page 3 of 10 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Table 3. Absolute – Maximum Ratings, Limiting Values Detector type Parameter LLAM-1060(E)-R8BH LLAM-900-R5BH (C30954EH) Min Max (C30902EH) Min Max LLAM-1550(E) Models (C30645EH) (C30662EH) Min Max 600 300 350 210 100 50 V V 0.1 50 0.1 50 2 mW mW kW/cm² 85 70 ±5.5 ˚C ˚C V 0.9 0.8 1.8 W V A Photodiode HV bias voltage (Note 1) at TA = +70˚C at TA = -40˚C Incident radiant flux, ΦM, (Note 2) average (Note 3) peak (Note 4) peak (Note 5) Case temperature storage, Tstg operating, TA Preamplifier bias voltage Thermo-Electric Cooler (TEC) Qmax, heat-pumping capacity Vmax, rated at 27⁰C Imax, rated at 27⁰C 4 (for-1550) 1000 (for -1550E) -50 -40 ±4.5 85 70 ±5.5 0.9 0.8 1.8 -50 -40 ±4.5 85 70 ±5.5 0.9 0.8 1.8 -50 -40 ±4.5 Units Note 1: The operating voltage (Vop) must remain below the breakdown voltage (Vbr), these values are worst-case estimates. HV voltage current should be limited externally to less than 1mA. Note 2: As demonstrated in laboratory conditions. Note 3: Based on 0.5 W electrical power on the high voltage (HV) supply. Note 4: Test with 30 ns pulse width. Note 5: Tested at 1060 nm, 10 ns pulse width and 1 kHz pulse repetition rate Figure 1. Schematic Block Diagram – LLAM Series www.excelitas.com Page 4 of 10 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Responsivity [kV/W] Figure 2. Typical Spectral Responsivity 500 450 400 350 300 250 200 150 100 50 0 LLAM-900-R5BH LLAM-1060/1060E-R8BH LLAM-1550/1550E-R2AH 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 Wavelength [nm] 100 LLAM-1550/1550E-R08BH Responsivity [kV/W] 90 80 70 60 50 40 30 20 10 0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 Wavelength [nm] Figure 3. Typical Responsivity as a Function of Operating Voltage – LLAM-(900/1060) Series 10000 LLAM-900-R5BH Responsivity [kV/W] LLAM-1060/1060E-R8BH 1000 100 10 100 150 200 250 300 350 400 Operating Voltage [V] www.excelitas.com Page 5 of 10 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Figure 4. Typical Responsivity as a function of Operating Voltage – LLAM-(1550/1550E) Series 10000 LLAM-1550/1550E-R2AH Responsivity [kV/W] LLAM-1550/1550E-R08BH 1000 100 10 10 15 20 25 30 35 40 45 50 55 Operating Voltage [V] Figure 5. Typical Noise and Frequency response curves 1 Normalized frequency response [dB] Normalized output noise voltage 1.4 1.2 1 0.8 0.6 0.4 50 MHz 200 MHz 0.2 0 0 -1 -2 -3 -4 -5 50 MHz -6 200 MHz -7 -8 1 10 100 1000 1 10 Frequency [MHz] 100 1000 Frequency [MHz] Output voltage noise normalization is calculated using the following formula: f −3 dB Vnnormalize = www.excelitas.com Vn Vnaverage  V  , where Vnaverage  =  Hz  Page 6 of 10 V n 100kHz 2  df f −3dB LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Figure 6. Typical variation of responsivity as a function of temperature LLAM-900-R5BH responsivity at 900 nm 100 100 -20 C 0C 23 C 45 C 10 150 175 200 Vop (V) 225 250 150 LLAM-1550/1550E-R08BH responsivity at 1550 nm 100 -20 C 0C 23 C 45 C 10 25 30 www.excelitas.com 35 40 45 Vop (V) 50 55 200 250 300 Vop (V) 350 Page 7 of 10 450 100 -20 C 0C 23 C 45 C 10 60 400 LLAM-1550/1550E-R2AH responsivity at 1550 nm 1000 Responsivity (kV/W) 1000 LLAM-1060/1060E-R8BH responsivity at 1060 nm -20 C 0C 23 C 45 C 10 Responsivity (kV/W) 1000 Responsivity (kV/W) Responsivity (kV/W) 1000 25 30 35 40 45 Vop (V) 50 55 60 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Figure 7. Mechanical Characteristics – LLAM Series − reference dimensions shown in mm [inches] Figure 8. Approximate field of view – LLAM Series For incident radiation at angles ≤ 𝛼/2, the photosensitive surface is totally illuminated. For incident radiation at angles > 𝛼/2, but ≤ 𝛼 ′ /2, the photosensitive surface is partially illuminated. www.excelitas.com Page 8 of 10 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) Table 4. Ordering Guide Model Nominal Bandwidth Wavelength Response 900 nm (peak) Detector Type C30902EH 200 MHz 1064 nm (optimized) C30954EH LLAM-900-R5BH LLAM-1060-R8BH LLAM-1060E-R8BH Detector Material Active Diameter 0.5 mm Comments Silicon 0.8 mm Enhanced damage threshold LLAM-1550-R2AH 50 MHz C30662EH 0.2 mm LLAM-1550E-R2AH Enhanced damage threshold 1550 nm (peak) InGaAs LLAM-1500-R08BH 175 MHz C30645EH LLAM-1550E-R08BH 0.08 mm Enhanced damage threshold Information Excelitas Technologies’ LLAM series of Silicon and InGaAs avalanche photodiodes (APD) receiver modules feature an APD, thermoelectric cooler (TEC) and a hybrid, all in the same hermetically-sealed modified 12-lead TO-66 flange package for increased heat sinking. The use of a TEC eases the burden on the APD bias control to insure constant responsivity over a 5⁰C to 40⁰C ambient temperature range. The LLAM series modules are specifically designed for the detection of high-speed, low-light analog signals. The Si APDs used in these devices are the same as used in Excelitas’ C30902EH and C30954EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. Just like the C30659 series, the preamplifier section of the LLAM module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series. The LLAM is an inverting amplifier design with an emitter follower used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be capacitively- or AC-coupled to a 50 Ω termination. The module must not be DC-coupled to loads of less than 2 kΩ. For field use, it is recommended that a temperature-compensated HV supply be employed to maintain a constant responsivity over temperature. Excelitas’ InGaAs LLAM-1060E and -1550E Preamplifier Modules, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities. The LLAM series modules are offered as standard, RoHS-compliant, commercial off-the-shelf (COTS) products. Excelitas offers customized modules tailored for your specific needs; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging. www.excelitas.com Page 9 of 10 LLAM Series-Rev.2-2022.01 LLAM Series – 900/1060/1060E/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules (LLAM) RoHS Compliance The LLAM Series of APD Preamplifier Modules are designed and built to be fully compliant with the European Union Directive 2011/65/EU – Restriction of the use of certain Hazardous Substances (RoHS) in Electrical and Electronic equipment. About Excelitas Technologies Excelitas Technologies is a global technology leader focused on delivering innovative, customized solutions to meet the lighting, detection and other high-performance technology needs of OEM customers. Excelitas has a long and rich history of serving our OEM customer base with optoelectronic sensors and modules for more than 45 years beginning with PerkinElmer, EG&G, and RCA. The constant throughout has been our innovation and commitment to delivering the highest quality solutions to our customers worldwide. From aerospace and defense to analytical instrumentation, clinical diagnostics, medical, industrial, and safety and security applications, Excelitas Technologies is committed to enabling our customers' success in their specialty end-markets. Excelitas Technologies 22001 Dumberry Road Vaudreuil-Dorion, Quebec Canada J7V 8P7 Telephone: (+1) 450.424.3300 Toll-free: (+1) 800.775.6786 Fax: (+1) 450.424.3345 detection.na@excelitas.com Excelitas Technologies GmbH & Co. KG Wenzel-Jaksch-Str. 31 D-65199 Wiesbaden Germany Telephone: (+49) 611 492 430 Fax: (+49) 611 492 165 detection.europe@excelitas.com Excelitas Technologies International Sales Office Bat HTDS BP 246, 91882 Massy Cedex, France Telephone: +33 (1) 6486 2824 europedefense@excelitas.com Excelitas Technologies Singapore, Pte. Ltd. 8 Tractor Road Singapore 627969 Telephone: (+65) 6775 2022 (Main number) Telephone: (+65) 6770 4366 (Customer Service) Fax: (+65) 6778-1752 detection.asia@excelitas.com For a complete listing of our global offices, visit www.excelitas.com/locations © 2013 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp. All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners. Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors. www.excelitas.com Page 10 of 10 LLAM Series-Rev.2-2022.01