BT131 Series
1A TRIACs
4 Quadrants TRIACs
ShenZhenHanKingyuan
Electronic CO.,Ltd
TRIACs
BT131 Series
4 Quadrants
ShenZhenHanKingyuan
Electronic CO.,Ltd
01.
1
2
3
1
3
2
SOT-223
TO-92
2
1
1
2
3
3
SOT-223-2L
SOT-89
2
1
3
SOT-89-2L
FEATURES
IT(RMS): 1A
VGT: 1.2V
VDRM VRRM:600Vand800V
APPLICATIONS
Washing machine,vacuums, massager,solid state relay,AC Motor speed regulation and so on.
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PAGE.01/06
TRIACs
BT131 Series
4 Quadrants
ShenZhenHanKingyuan
Electronic CO.,Ltd
Absolute Maximum Ratings
(Tj=25°C unless otherwise specifed)
Symbol Parameter
VDRM
VRRM
Conditions
Ratings
Unit
BT131
600-800
V
Tc=110°C
1
A
Surge On-State Current
Tp=10ms
12
A
I²t for fusing
Tp=10ms
0.72
A²s
Tj=125°C
0.3
W
tp=20us Tj=125°C
1.2
A
Operating Junction Temperature
~40~125
°C
Storage Temperature
~40~150
°C
Repetitive Peak Off-State Voltage
IT(RMS) R.M.S On-State Current
ITSM
I²t
PG(AV) Average Gate Power Dissipation
IGM
Tj
TSTG
Peak Gate Current
Electrical Characteristics
(Tj=25°C unless otherwise specifed)
Symbol Parameter
IDRM
Repetitive Peak Off-State Current
IRRM
Repetitive Peak Reverse Current
VTM
Forward "on" voltage
VGD
Gate non-trigger voltage
IH
02.
Holding current
I,II,III
IV
VGT
Gate trigger voltage
IGT
Gate trigger current
di/dt
Critical-rate of rise of
commutation current.
dv/dt
Critical-rate of rise of commutation
voltage
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Test Conditions
Value
Unit
Tj=25°C
≤10
uA
Tj=110°C
≤200
uA
Tj=25°C
≤10
uA
Tj=110°C
≤200
uA
IT=1.6A tp=380us
≤1.5
V
VD=VDRM, Tj=110°C
≥0.2
V
≤5
mA
≤10
mA
≤1.2
V
≤3
mA
≤7
mA
VD=12V ,IGT=0.1A
VD=12V
I,II,III
IV
I,II,III
IV
VD=12V
IT=1A
IG==0.2A,dIg/dt=0.2A/us
≥50
A /us
≥10
A /us
TJ=110°C VD=2/3VDRM
≥30
V/us
PAGE.02/06
TRIACs
BT131 Series
4 Quadrants
ShenZhenHanKingyuan
Electronic CO.,Ltd
FIG1
03.
FIG2
RMS on-state current versus case
temperature
Maximum power dissipation versus RMS
on-state current
IT(RMS) (A)
1.2
P(w)
1.6
α=180°
TO-92
1.0
SOT-89-2L SOT-89
SOT-223 SOT-223-2L
1.2
0.8
0.8
0.6
0.4
0.4
0.2
0
0
IT(RMS) (A)
0.4
0.6
0.2
0.8
1.0
TC (℃)
0
0
25
FIG3
50
75
100
125
4
5
FIG4
On-state characteristics (maximum
values)
Surge peak on-state current versus
number of cycles
ITM (A)
ITSM (A)
20
20
t=20ms
10
One cycle
16
Tj=Tjmax
12
1
8
Tj=25℃
4
0
1
10
Number of cycles
100
1000
0.1
0
1
FIG5
FIG6
FIG.6: Relative variations of gate trigger current,
holding current and latching current versus
junction temperature
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp
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