RP512x Series
0.3 µA IQ Ultra-low Quiescent Current 300 mA Buck DC/DC Converter
No. EA-400-190401
OVERVIEW
RP512x is a DC/DC converter featuring 0.3 μA ultra-low operating quiescent current.
It is suitable for use in wearable and IoT devices that require miniaturization and long-lifetime of battery.
KEY BENEFITS
VFM (fSW up to 1 MHz) control achieves 0.3 μA ultra-low operating quiescent current.
The wide range of VIN from 2.0 V to 5.5 V allows operation from coin cell to USB port.
Total mount area including CIN, COUT, and inductor is 10.6 mm2.
Selectable packages including WLCSP, DFN, and SOT. 0.4 mm-thickness WLCSP package adaptable
to IC cards.
KEY SPECIFICATIONS
TYPICAL CHARACTERISTICS
Output Current: 300 mA
Output Voltage Range:
1.0 V to 4.0 V (Settable in 0.1 V step)
Output Voltage Accuracy:
±1.5% (VSET ≥ 1.2 V), ±18 mV (VSET < 1.2 V)
Built-in Driver On-resistance (VIN = 3.6 V):
Typ. PMOS 0.15 Ω, NMOS 0.15 Ω (RP512Z)
Standby Current: 0.01 µA
TYPICAL APPLICATIONS
VIN
VIN
60
Vin=2.3V
Vin=3.6V
Vin=5.5V
40
20
0
0.001
0.01
1
10
IOUT [mA]
100
1000
Package
Q’ty per
Reel
WLCSP-8-P1
5,000 pcs
Product Name
COUT
RP512Zxx1$-TR-F
CE
0.1
VOUT
L
VOUT
CIN
80
SELECTION GUIDE
LX
RP512x
VOUT = 1.8 V
100
Efficiency [%]
●
●
●
●
GND
RP512Kxx1$-TR
DFN2527(PL)-10
RP512Hxx1$-T1-FE
L: 2.2 µH, COUT: 22 µF
SOT-89-5
5,000 pcs
1,000 pcs
xx: Set output voltage (VSET)
Fixed Output Voltage Type:
1.0 V (10) to 4.0 V (40) in 0.1 V step.
PACKAGES
$: Version
Version
WLCSP-8-P1
DFN(PL)2527-10
SOT-89-5
1.45 mm x 1.48 mm,
2.7mm x 2.5 mm,
4.5mm x 4.35mm,
t=0.4mm (max.)
t=0.6mm (max.)
t=1.6mm (max.)
Auto-discharge Function
C
No
D
Yes
VSET
1.0 V to 4.0 V
APPLICATIONS
Wearable equipment such as SmartWatch, SmartBand, and health monitoring
Li-ion battery-used equipment, Coin cell-used equipment
Low power RF such as Bluetooth® Low Energy, Zigbee, WiSun, and ANT
Low power CPU, memory, sensor devices, and energy harvesting
1
RP512x
No. EA-400-190401
SELECTION GUIDE
The set output voltage, the output voltage type, and the auto-discharge function(1), and the package for the ICs
are user-selectable options.
Selection Guide
Product Name
RP512Zxx1$-TR-F
RP512Kxx1$-TR
RP512Hxx1$-T1-FE
Package
Quantity per Reel
Pb Free
Halogen Free
WLCSP−8−P1
5,000 pcs
Yes
Yes
DFN(PL)2527-10
5,000 pcs
Yes
Yes
1,000 pcs
Yes
Yes
SOT-89-5
xx: Designation of the set output voltage (VSET)
For Fixed Output Voltage Type(2): 1.0 V (10) to 4.0 V (40) in 0.1 V step
$: Designation of Version
(1)
Version
Auto-discharge Function
C
Disable
D
Auto-discharge
VSET
1.0 V to 4.0 V
Auto-discharge function quickly lowers the output voltage to 0 V, when the chip enable signal is switched from the active
mode to the standby mode, by releasing the electrical charge accumulated in the external capacitor.
(2)
The customization of specifying in 0.05 V step is available.
2
RP512x
No. EA-400-190401
BLOCK DIAGRAM
RP512xxx1C Block Diagram
RP512xxx1D Block Diagram
3
RP512x
No. EA-400-190401
PIN DESCRIPTION
Top View
Bottom View
3
3
2
2
1
1
A
B
C
C
B
A
RP512Z (WLCSP-8-P1) Pin Configuration
Top View
10
9
8
5
Bottom View
7
6
6
7
8
9
4
10
(1)
1
2
3
4
5
5
4
3
2
1
1
RP512K [DFN(PL)2527-10] Pin Configuration
1
2
3
RP512H (SOT-89-5)
Pin Configuration
RP512Z Pin Description
(1)
Pin No.
Symbol
Description
A1
VIN
Input Pin
B1
VIN
Input Pin
C1
LX
Switching Pin
A2
VOUT
Output voltage Pin
C2
GND
Ground Pin
A3
CE
B3
GND
Ground Pin
C3
GND
Ground Pin
Chip Enable Pin (Active-high)
The tab on the bottom of the package enhances thermal performance and is electrically connected to GND (substrate
level). It is recommended that the tab be connected to the ground plane on the board, or otherwise be left floating.
4
RP512x
No. EA-400-190401
RP512K Pin Description
Pin No.
Symbol
Description
1
VOUT
Output Pin
2
GND
Ground Pin
3
GND
Ground Pin
4
LX
Switching Pin
5
LX
Switching Pin
6
VIN
Input Pin
7
VIN
Input Pin
8
NC
No connection
9
CE
Chip Enable Pin (Active-high)
10
NC
No connection
RP512H Pin Description
Pin No.
Symbol
Description
1
VOUT
Output Pin
2
GND
Ground Pin
3
LX
Switching Pin
4
VIN
Input Pin
5
CE
Chip Enable Pin (Active-high)
5
RP512x
No. EA-400-190401
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings
(GND = 0 V)
Symbol
Parameter
Rating
Unit
−0.3 to 6.5
V
VIN
Input Voltage
VLX
LX Pin Voltage
−0.3 to VIN + 0.3
V
VCE
CE Pin Voltage
−0.3 to 6.5
V
VMODE
MODE Pin Voltage
−0.3 to 6.5
V
VOUT
VOUT Pin Voltage
−0.3 to 6.5
V
650
mA
WLCSP-8-P1, JEDEC STD. 51-9
1140
mW
DFN(PL)2527-10, JEDEC STD. 51-7
2500
mW
SOT-89-5, JEDEC STD. 51-7
2600
mW
ILX
LX Pin Output Current
Power Dissipation(1)
PD
Tj
Junction Temperature Range
−40 to 125
C
Tstg
Storage Temperature Range
−55 to 125
C
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent
damages and may degrade the lifetime and safety for both device and system using the device in the field. The
functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CONDITIONS
Recommended Operating Conditions
Symbol
Parameter
Rating
Unit
VIN
Input Voltage
2.0 to 5.5
V
Ta
Operating Temperature Range
−40 to 85
°C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the
semiconductor devices may receive serious damage when they continue to operate over the recommended operating
conditions.
(1)
6
Refer to POWER DISSIPATION for detailed information.
RP512x
No. EA-400-190401
ELECTRICAL CHARACTERISTICS
The specifications surrounded by
are guaranteed by design engineering at −40°C ≤ Ta ≤ 85°C.
RP512x Electrical Characteristics
Symbol
VOUT
Parameter
Output Voltage
Condition
VIN = VCE = 3.6 V
VSET ≥ 1.2 V
(VSET ≤ 2.6 V),
VIN = VCE = VSET +1 V
VSET < 1.2 V
(VSET > 2.6 V)
Operating Quiescent Current
VIN = VCE = VOUT = 3.6 V,
VSET = 1.8 V, device not switching
Standby Current
VIN = 5.5 V, VCE = 0 V
ICEH
CE Pin Input Current, high
VIN = VCE = 5.5 V
ICEL
CE Pin Input Current, low
IVOUTH
IQ
Min.
Typ.
(Ta = 25°C)
Max.
Unit
x 0.985
x 1.015
−0.018
+0.018
V
A
0.3
0.01
0.5
A
−0.025
0
0.025
A
VIN = 5.5 V, VCE = 0 V
−0.025
0
0.025
A
VOUT "High" Input Current
VIN = VOUT = 5.5 V, VCE = 0 V
−0.025
0
0.025
A
IVOUTL
VOUT "Low" Input Current
VIN = 5.5 V, VCE = VOUT = 0 V
−0.025
0
0.025
A
RDISN
Auto-discharge NMOS Onstate Resistance(1)
VIN = 3.6 V, VCE = 0 V
VCEH
CE Pin Input Voltage, high
VIN = 5.5 V
VCEL
CE Pin Input Voltage, low
VIN = 2.0 V
RONP
PMOS On-state
Resistance
ISTANDBY
RP512Z
RONN
NMOS On-state
Resistance
60
Ω
1.0
V
0.4
VIN = 3.6 V, ILX = −100 mA
0.15
V
Ω
RP512K
VIN = 3.6 V, ILX = −100 mA
0.19
Ω
RP512H
VIN = 3.6 V, ILX = −100 mA
0.19
Ω
RP512Z
VIN = 3.6 V, ILX = −100 mA
0.15
Ω
RP512K
VIN = 3.6 V, ILX = −100 mA
0.19
Ω
RP512H
VIN = 3.6 V, ILX = −100 mA
0.19
Ω
10
ms
mA
tSTART
Soft-start Time
VIN = VCE = 3.6 V (VSET ≤ 2.6 V),
VIN = VCE = VSET + 1 V (VSET > 2.6 V)
ILXLIM
LX Current Limit
VIN = VCE = 3.6 V (VSET ≤ 2.6 V),
VIN = VCE = VSET + 1 V (VSET > 2.6 V)
300
580
VIN = VCE, Falling
1.40
1.50
1.65
V
VIN = VCE, Rising
1.55
1.65
1.80
V
VUVLOF
VUVLOR
Undervoltage Lockout
(UVLO) Threshold
All test items listed under Electrical Characteristics are done under the pulse load condition (Tj ≈ Ta = 25°C).
Test circuit is operated with “Open Loop Control” (GND = 0 V), unless otherwise specified.
(1)
RP512xxx1D only
7
RP512x
No. EA-400-190401
Product-specific Electrical Characteristics
RP512xxx1x
Product Name
RP512x101x
RP512x111x
RP512x121x
RP512x131x
RP512x141x
RP512x151x
RP512x161x
RP512x171x
RP512x181x
RP512x191x
RP512x201x
RP512x211x
RP512x221x
RP512x231x
RP512x241x
RP512x251x
RP512x261x
RP512x271x
RP512x281x
RP512x291x
RP512x301x
RP512x311x
RP512x321x
RP512x331x
RP512x341x
RP512x351x
RP512x361x
RP512x371x
RP512x381x
RP512x391x
RP512x401x
8
(Ta = 25°C)
Min.
0.9820
1.0820
1.1820
1.2805
1.3790
1.4775
1.5760
1.6745
1.7730
1.8715
1.9700
2.0685
2.1670
2.2655
2.3640
2.4625
2.5610
2.6595
2.7580
2.8565
2.9550
3.0535
3.1520
3.2505
3.3490
3.4475
3.5460
3.6445
3.7430
3.8415
3.9400
VOUT
Typ.
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
Max.
1.0180
1.1180
1.2180
1.3195
1.4210
1.5225
1.6240
1.7255
1.8270
1.9285
2.0300
2.1315
2.2330
2.3345
2.4360
2.5375
2.6390
2.7405
2.8420
2.9435
3.0450
3.1465
3.2480
3.3495
3.4510
3.5525
3.6540
3.7555
3.8570
3.9585
4.0600
RP512x
No. EA-400-190401
THEORY OF OPERATION
Soft-start Time
Starting-up with CE Pin
The IC starts to operate when the CE pin voltage (VCE) exceeds the threshold voltage. The threshold voltage
is preset between CE “H” input voltage (VCEH) and CE “Low” input voltage (VCEL).
After the start-of the start-up of the IC, soft-start circuit starts to operate. Then, after a certain period of time,
the reference voltage (VREF) in the IC gradually increases up to the specified value.
Notes: Soft start time (tSTART)(1) is not always equal to the turn-on speed of the step-down DC/DC converter.
Please note that the turn-on speed could be affected by the power supply capacity, the output current, the
inductance value and the COUT value.
VCEH
Threshold Level
VCEL
VCE
tSTART
VREF
Soft-start Circuit
operation starts
VLX
VOUT
Depending on Power Supply,
Load Current, External Components
Timing Chart when Starting-up with CE Pin
Starting-up with Power Supply
After the power-on, when VIN exceeds the UVLO released voltage (VUVLO2), the IC starts to operate. Then, softstart circuit starts to operate and after a certain period of time, VREF gradually increases up to the specified
value.
Note: Please note that the turn-on speed of VOUT could be affected by the power supply capacity, the output
current, the inductance value, the COUT value and the turn-on speed of VIN determined by CIN.
VIN
VUVLO2
tSTART
VREF
VLX
VSET
VOUT
Depending on Power Supply, Load Current,
External Components
Timing Chart when Starting-up with Power Supply
(1)
Soft-start time (tSTART) indicates the duration until the reference voltage (VREF) reaches the specified voltage after softstart circuit’s activation.
9
RP512x
No. EA-400-190401
Undervoltage Lockout (UVLO) Circuit
If VIN becomes lower than VSET, the step-down DC/DC converter stops the switching operation and ON duty
becomes 100%, and then VOUT gradually drops according to VIN. If the VIN drops more and becomes lower
than the UVLO detector threshold (VUVLO1), the UVLO circuit starts to operate, VREF stops, and PMOS and
NMOS built-in switch transistors turn “OFF”. As a result, VOUT drops according to the COUT capacitance value
and IOUT.
As for RP512xxx1D, the discharge transistor for COUT discharges after it turns on. To restart the operation, VIN
needs to be higher than VUVLO2.
The timing chart below shows the voltage shifts of VREF, VLX and VOUT when VIN value is varied.
Note: Falling edge (operating) and rising edge (releasing) waveforms of VOUT could be affected by the initial
voltage of COUT and the output current of VOUT.
VIN
VSET
VUVLO2
VUVLO1
tSTART
VREF
VLX
VOUT
VOUT
Depending on Power Supply, Load
Current, External Components
Timing Chart with Variations in Input Voltage (VIN)
10
RP512x
No. EA-400-190401
Operation of Step-down DC/DC Converter and Output Current
The step-down DC/DC converter charges energy in the inductor when LX transistor turns “ON”, and discharges
the energy from the inductor when LX transistor turns “OFF” and controls with less energy loss, so that a lower
output voltage (VOUT) than the input voltage (VIN) can be obtained. The operation of the step-down DC/DC
converter is explained in the following figures.
IL
i1
VIN
PMOS Tr.
NMOS Tr.
VOUT
L
i2
ILMIN
i1
i2
tOPEN
CL
GND
Basic Circuit
ILMAX
tON
tOFF
Inductor Current (IL) flowing through Inductor (L)
Step1.
PMOS transistor turns “ON” and IL (i1) flows, L is charged with energy. At this moment, i1 increases
from the minimum inductor current (ILMIN), which is 0 A, and reaches the maximum inductor current
(ILMAX) in proportion to the on-time period (tON) of PMOS transistor.
Step2.
When PMOS transistor turns “OFF”, L tries to maintain IL at ILMAX, so L turns NMOS transistor “ON”
and IL (i2) flows into L.
Step3.
i2 decreases gradually and reaches ILMIN after the open-time period (tOPEN) of NMOS transistor, and
then NMOS transistor turns “OFF”. This is called discontinuous current mode.
As the output current (IOUT) increases, the off-time period (tOFF) of PMOS transistor runs out before IL
reaches ILMIN. The next cycle starts, and PMOS transistor turns “ON” and NMOS transistor turns
“OFF”, which means IL starts increasing from ILMIN. This is called continuous current mode.
When the step-down DC/DC operation is constant, ILMIN and ILMAX during ton of PMOS transistor would be
same as during tOFF of PMOS transistor. The current differential between ILMAX and ILMIN is described as I, as
the following equation 1.
I = ILMAX − ILMIN = VOUT tOPEN / L = (VIN − VOUT) tON / L ꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏꞏ (1)
11
RP512x
No. EA-400-190401
VFM Mode
A switching method is a VFM (Variable Frequency Modulation) mode to achieve a high efficiency during light
load conditions. A switching frequency varies depending on values of input voltage (VIN), output voltage
(VOUT), and output current (IOUT). Check the actual characteristics for concerns regarding the switching noise.
A switching starts when VOUT drops below the lower-limit reference voltage (VREFL). When VOUT exceeds the
upper-limit reference voltage (VREFH), a constant voltage outputs by a hysteresis control which stops the
switching.
In order not to exceed the rated current of inductor or to avoid using the deteriorated band frequency of DC
superimposed characteristics, the operation shifts to off-cycle once when the inductor current (IL) exceeds LX
current limit (ILXLIM), and then it shifts back to on-cycle again when IL drops below the valley current limit (ILXVAL).
12
No Load
Light Load
Medium Load
Heavy Load
RP512x
No. EA-400-190401
APPLICATION INFORMATION
Typical Application
VIN
VIN
L
RP512x
VOUT
CIN
VOUT
LX
COUT
GND
CE
RP512x Typical Application
Recommended External Components
Symbol
CIN
Descriptions
10 µF, GRM155R60J106ME44D, MURATA
COUT
22 µF, JMK107BBJ226MA-T, TAIYO
L
2.2 µH, DFE201610P-2R2M, TOKO
Precautions for Selecting External Components
・Using ceramic capacitors with low ESR (Equivalent Series Resistance) are recommended. Select capacitors
with considerations of bias characteristics and input/output voltages.
・When a built-in Lx switch is turned off, a spike-like high voltage may be generated due to an action of an
inductor. Using 1.5 times or more of a set output voltage is recommended for the withstanding voltage of
COUT.
・Select an inductor that has small DC resistance, has sufficient allowable current and is hard to cause
magnetic saturation.
13
RP512x
No. EA-400-190401
TECHNICAL NOTES
The performance of a power source circuit using this device is highly dependent on a peripheral circuit. A
peripheral component or the device mounted on PCB should not exceed a rated voltage, a rated current or a
rated power. When designing a peripheral circuit, please be fully aware of the following points. Refer to PCB
Layout below.
・External components must be connected as close as possible to the ICs and make wiring as short as
possible. Especially, the capacitor connected in between VIN pin and GND pin must be wiring the shortest.
・If the impedance of power supply lines and GND lines is high, the internal voltage of the IC may shift by
the switching current, and the operating may be unstable. Make the power supply and GND lines
sufficient.
・A sufficient consideration is required due to a large switching current flows through power supply lines,
GND lines, an inductor, Lx, and VOUT line.
・The wiring between VOUT pin and inductor should be separated from the wiring connected to the load.
・When an intermediate voltage other than VIN or GND is input to the CE pin, a supply current may be increased
with a through current of a logic circuit in the IC. The CE pin is neither pulled up nor pulled down, therefore
an operation is not stable at open.
14
RP512x
No. EA-400-190401
PCB Layout
RP512Zxx1x (WLCSP-8-P1)
Top Layer
Bottom Layer
RP512Kxx1x [DFN(PL)2527-10]
Top Layer
Bottom Layer
15
RP512x
No. EA-400-190401
RP512Hxx1x (SOT-89-5)
Top Layer
16
Bottom Layer
RP512x
No. EA-400-190401
TYPICAL CHARACTERISTICS
QuiescentCurrent IQ[uA]
1.00
0.90
Vin=3.6V
0.80
Vin=5.5V
StandbyCurrent ISTANDBY[uA]
Typical Characteristics are intended to be used as reference data; they are not guaranteed.
1) Quiescent Current vs. Temperature
2) Standby Current vs. Temperature
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
-50
-25
0
25
50
Temperature Ta[℃]
75
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
Vin=3.6V
Vin=5.5V
‐50
‐25
0
25
50
Temperature Ta[℃]
75
100
1.980
10.0
1.944
8.0
1.908
6.0
1.872
4.0
1.836
2.0
1.800
0.0
1.764
-2.0
1.728
-4.0
1.692
-6.0
1.656
-8.0
Vout_%
OutputVoltage VOUT [V]
3) Output Voltage vs. Temperature
RP512x181x, VIN = 3.6 V
-10.0
1.620
-50
-25
0
25
50
75
Temperature Ta[℃]
100
4) Efficiency vs. Output Current
RP512x121x, Ta = 25°C
RP512x181x, Ta = 25°C
100
100
90
80
80
70
70
60
50
Vin=2.0V
40
Vin=3.6V
30
Vin=4.2V
20
Vin=5.0V
10
0
0.001
0.01
0.1
1
10
100
OutputCurrent IOUT [mA]
Efficiency [%]
Efficiency [%]
90
60
50
Vin=2.0V
Vin=2.3V
Vin=3.6V
Vin=4.2V
Vin=5.0V
40
30
20
10
0
0.001
0.01
0.1
1
10
100
OutputCurrent IOUT [mA]
17
RP512x
No. EA-400-190401
RP512x331x, Ta = 25°C
100
90
Efficiency [%]
80
70
60
50
40
Vin=3.6V
30
Vin=4.2V
20
Vin=5.0V
10
0
0.1
1
10
100
OutputCurrent IOUT [mA]
Output Voltage vs. Output Current
RP512x121x, Ta = 25°C
1.248
OutputVoltage VOUT [V]
5.0
Vin=2.0V
Vin=3.6V
Vin=4.2V
Vin=5.0V
1.236
1.224
1.212
1.890
1.0
1.200
-1.0
1.188
1.176
-3.0
1.164
1.152
Vin=3.6V
1.836
Vin=4.2V
1.818
Vin=5.0V
1.800
3.0
1.0
-1.0
1.782
1.764
1.746
-3.0
1.710
-5.0
0
50 100 150 200 250
OutputCurrent IOUT [mA]
300
3.465
3.432
3.399
Vin=4.2V
3.0
Vin=5.0V
3.366
3.333
1.0
3.300
3.267
OutputVoltage_% [%]
5.0
Vin=3.6V
-1.0
3.234
3.201
-3.0
3.168
3.135
-5.0
0
50 100 150 200 250
OutputCurrent IOUT [mA]
300
-5.0
0
RP512x331x, Ta = 25°C
OutputVoltage VOUT [V]
Vin=2.3V
1.854
5.0
1.728
1.140
18
Vin=2.0V
1.872
3.0
OutputVoltage VOUT [V]
1.260
RP512x181x, Ta = 25°C
OutputVoltage_% [%]
5)
0.01
OutputVoltage_% [%]
0.001
50
100 150 200 250 300
OutputCurrent IOUT [mA]
RP512x
No. EA-400-190401
Ripple Voltage vs. Output Current
RP512x121x, Ta = 25°C
Vin=3.6V
96
162
7
Vin=5.0V
72
9
8
Vin=4.2V
84
180
6
144
126
108
60
5
48
4
36
3
24
2
12
1
0
0
0
0
50
100 150 200 250
OutputCurrent IOUT[mA]
10
Vin=2.0V
Vin=2.3V
Vin=3.6V
Vin=4.2V
Vin=5.0V
9
8
7
6
90
5
72
4
54
3
36
2
18
1
300
RippleVoltage [%]
Vin=2.0V
108
OutputVoltage Vripple [mV]
RP512x181x, Ta = 25°C
10
OutputVoltage Vripple [mV]
120
RippleVoltage [%]
6)
0
0
50
100 150 200 250
OutputCurrent IOUT[mA]
300
RP512x331x, Ta = 25°C
10
297
Vin=3.6V
264
Vin=4.2V
8
231
Vin=5.0V
7
9
198
6
165
5
132
4
99
3
66
2
33
1
RippleVoltage [%]
OutputVoltage Vripple [mV]
330
0
0
0
50
100 150 200 250
OutputCurrent IOUT[mA]
300
7) Switching Frequency vs. Output Current
RP512x121x, Ta = 25°C
400
400
Vin=2.0V
350
300
Vin=4.2V
250
Vin=5.0V
Vin=2.0V
Vin=2.3V
Vin=3.6V
Vin=4.2V
Vin=5.0V
350
Vin=3.6V
Vout Frequency [kHz]
Vout Frequency [kHz]]
RP512x181x, Ta = 25°C
200
150
100
50
300
250
200
150
100
50
0
0
0
50
100
150
200
OutputCurrent IOUT[mA]
250
300
0
50
100
150
200
250
300
OutputCurrent IOUT[mA]
19
RP512x
No. EA-400-190401
RP512x331x, Ta = 25°C
400
Vin=3.6V
350
Vin=4.2V
Vout Frequency [kHz]
300
Vin=5.0V
250
200
150
100
50
0
0
50
100
150
200
250
300
OutputCurrent IOUT[mA]
8) Load Transient Response
RP512x181x, Ta = 25°C, VIN = 3.6 V
IOUT = 0.01 mA -> 100 mA
50
0
1.82
50
1.80
100
1.78
150
1.76
200
1.74
250
1.72
300
1.70
350
0
80
160
240
Time [us]
320
400
3.0
2.0
0.4
1.0
Vout
0.0
CE
-1.0
Iin
-2.0
0.2
0.0
-3.0
50
1.84
0
1.82
50
1.80
100
1.78
150
1.76
200
1.74
250
1.72
300
350
0.0
0.4
0.8
1.2
Time [ms]
1.6
2.0
5.0
4.0
0.6
3.0
2.0
0.4
1.0
Vout
0.0
CE
-1.0
Iin
-2.0
0.2
0.0
-3.0
-4.0
-0.2
-8 -4 0
20
CE/OutputVoltage VCE/ VOUT [V]
0.6
Iout
VIN = 3.6 V, VCE = 0 V -> 3.6 V, ⊿t = 10 µs
InputCurrent IIN [A]
CE/OutputVoltage VCE/ VOUT [V]
4.0
100
1.86
1.70
9) Soft Start Time
RP512x181x, Ta = 25°C
VIN = VCE =0 V -> 3.6 V, ⊿t = 10 µs
5.0
1.88
4
8 12 16 20 24 28 32
Time [ms]
-4.0
-0.2
-8 -4 0
4
8 12 16 20 24 28 32
Time [ms]
InputCurrent IIN [A]
OutputVoltage VOUT [V]
1.84
150
Vout
OutputCurrent IOUT [mA]
100
Iout
1.86
1.90
OutputVoltage VOUT [V]
Vout
1.88
IOUT = 100 mA -> 0.01 mA
150
OutputCurrent IOUT [mA]
1.90
POWER DISSIPATION
WLCSP-8-P1
Ver. B
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-9.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
101.5 mm x 114.5 mm x 1.6 mm
Copper Ratio
Outer Layers (First and Fourth Layers): 60%
Inner Layers (Second and Third Layers): 100%
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
1140 mW
Thermal Resistance (θja)
θja = 87°C/W
θja: Junction-to-Ambient Thermal Resistance
1500
114.5
1140
1000
750
101.5
Power Dissipation (mW)
1250
500
250
0
0
25
50
75 85
100
125
Ambient Temperature (°C)
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
PACKAGE DIMENSIONS
WLCSP-8-P1
Ver. A
WLCSP-8-P1 Package Dimensions (Unit: mm)
i
DFN(PL)2527-10
POWER DISSIPATION
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
0.3 mm × 30 pcs
Measurement Result
(Ta = 25°C, Tjmax = 125°C)
Item
Measurement Result
Power Dissipation
2500 mW
Thermal Resistance (ja)
ja = 39°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 11°C/W
ja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
3000
2500
Power Dissipation (mW)
2500
2000
1500
1000
500
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
DFN(PL)2527-10
PACKAGE DIMENSIONS
Ver. A
0.20±0.1
2.70
B
A
6
0.05 M
AB
10
0.25±0.1
X4
0.05
0.25±0.1
1.5±0.1
2.50
2.3±0.1
φ 0.5±0.05
S
0.05 S
5
0.30±0.1
0.50
1
0.10nom.
0.05min.
0.6max.
INDEX
DFN(PL)2527-10 Package Dimensions
∗ The tab on the bottom of the package is substrate level (GND). It is recommended that the tab be connected to the
ground plane on the board, or otherwise be left floating.
i
POWER DISSIPATION
SOT-89-5
Ver. A
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.
Measurement Conditions
Item
Measurement Conditions
Environment
Mounting on Board (Wind Velocity = 0 m/s)
Board Material
Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions
76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio
Outer Layer (First Layer): Less than 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes
0.3 mm × 13 pcs
(Ta = 25°C, Tjmax = 125°C)
Measurement Result
Item
Measurement Result
Power Dissipation
2600 mW
Thermal Resistance (ja)
ja = 38°C/W
Thermal Characterization Parameter (ψjt)
ψjt = 13°C/W
ja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter
3000
2600
Power Dissipation PD (mW)
2500
2000
1500
1000
500
0
0
25
50
75 85
100
125
Ambient Temperature (°C)
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
i
SOT-89-5
PACKAGE DIMENSIONS
Ver. A
4.5±0.1
1.5±0.1
0.4±0.3
2
5
4.35±0.1
φ1.0
1
4
4
2.5±0.1
1.00±0.2
5
0.4±0.1
0.3±0.2
0.42±0.1
0.1 S
3
0.4±0.1
3
2
1
0.3±0.2
1.6±0.2
S
0.42±0.1
0.42±0.1
0.47±0.1
1.5±0.1
1.5±0.1
SOT-89-5 Package Dimensions
i
1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer
to our sales representatives for the latest information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written
consent of our company.
3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
taking out of your country the products or the technical information described herein.
4. The technical information described in this document shows typical characteristics of and example application circuits
for the products. The release of such information is not to be construed as a warranty of or a grant of license under
our company's or any third party's intellectual property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic components in standard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and
reliability, for example, in a highly specific application where the failure or misoperation of the product could result in
human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and
transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us.
6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products
are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from
such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy
feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristics in the evaluation stage.
9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristics of the products under operation or storage.
10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case
of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use
AOI.
11. Please contact our sales representatives should you have any questions or comments concerning the products or
the technical information.
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https://www.nisshinbo-microdevices.co.jp/en/
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