SLG5NT1462VTR

SLG5NT1462V Ultra-small Dual 40 mΩ 1.0 A Integrated Power Switch with Discharge General Description Pin Configuration The product is packaged in an ultra-small 1.6 x 1.0 mm package. Features • • • • • • • Two 40 mΩ 1.0 A MOSFETs Two integrated VGS Charge Pumps User selectable ramp rate with external resistor Protected by thermal shutdown Integrated Discharge Resistor Pb-Free / Halogen-Free / RoHS compliant STDFN 8L, 1.0 x 1.6 mm D2 1 ON2 2 ON1 3 D1 4 SLG5NT1462V The SLG5NT1462V is designed for power switching applications. The part comes with two 40 mΩ 1.0 A rated MOSFETs, each controlled by an ON control pin. Each MOSFET’s ramp rate is adjustable depending on the input current level of the ON pin. 8 S2 7 GND 6 VDD 5 S1 8-pin STDFN (Top View) Block Diagram S1 D1 D2 S2 1.0 A 1.0 A VDD 2.5 V to 5.5 V Charge Pump Out Charge Pump Out ON1 ON2 CMOS Input GND Silego Technology, Inc. 000-005NT1462-103 Rev 1.03 Revised December 4, 2015 SLG5NT1462V Pin Description Pin # Pin Name Type Pin Description 1 D2 MOSFET 2 ON2 Input Turns on MOSFET1. Configurable slew rate control depending on input current. 3 ON1 Input Turns on MOSFET2. Configurable slew rate control depending on input current. 4 D1 MOSFET Drain of Power MOSFET2 5 S1 MOSFET Source of Power MOSFET2 6 VDD PWR Power Supply 7 GND GND Ground 8 S2 MOSFET Drain of Power MOSFET1 Source of Power MOSFET1 Ordering Information Part Number Type Production Flow SLG5NT1462V STDFN 8L Industrial, -40 °C to 85 °C SLG5NT1462VTR STDFN 8L (Tape and Reel) Industrial, -40 °C to 85 °C Application Diagram Current Controls Ramp Rate S2 3.3 V R2 ON2 Current Controls Ramp Rate Control IC ON1 3.3 V GND VDD R1 D1 000-005NT1462-103 SLG5NT1462V Control IC D2 S1 Page 2 of 9 SLG5NT1462V Absolute Maximum Ratings Parameter VDD TS ESDHBM ESDCDM MSL θJA WDIS Description Conditions Power Supply Storage Temperature Min. Typ. Max. Unit -- -- 6 V -65 -- 150 °C ESD Protection Human Body Model 2000 -- -- V ESD Protection Charged Device Model 1000 -- -- V -- °C/W Moisture Sensitivity Level 1 1 x 1.6mm STDFN; Determined using 1 in2, 1 oz. copper pads under each Dx and Sx terminal and FR4 pcb material Thermal Resistance, -- Package Power Dissipation MOSFET IDSPK Peak Current from Drain to Source For no more than 1 ms with 1% duty cycle 72 -- -- 0.4 W -- -- 1.5 A Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Electrical Characteristics TA = -40 °C to 85 °C (unless otherwise stated) Parameter Description Conditions Min. Typ. Max. Unit VDD Power Supply Pin 6 2.5 -- 5.5 V VD1 Drain Voltage of MOS1 Pin 4 0.85 -- VDD V VD2 Drain Voltage of MOS2 Pin 1 0.85 -- VDD V IDD Power Supply Current (PIN 6) when OFF -- 0.1 1 μA when ON, No load -- 35 50 μA RDSON IDS TDelay_ON TA 25°C MOSFET[1:2] @ 100 mA -- 40 50 mΩ TA 70°C MOSFET[1:2] @ 100 mA -- 50 55 mΩ TA 85°C MOSFET[1:2] @ 100 mA -- 55 65 mΩ Operating Current VD = 2.5 V to 5.5 V -- -- 1.0 A ON pin Delay Time 50% ON to Ramp Begin Input Current (PIN2, PIN3) = 20 μA, VDD = VD = 5 V, Source_Cap = 10 μF, RL = 20 Ω -- 2.4 4.0 ms Static Drain to Source ON Resistance Configurable 1 50% ON to 90% VS TTotal_ON Example: Input Current (PIN2, PIN3) = 20 μA, VDD = VD = 5 V, Source_Cap = 10 μF, RL = 20 Ω Total Turn On Time -- RDIS ON_VREF Example: Input Current (PIN2, PIN3) = 20 μA, VDD = VD = 5 V, Source_Cap = 10 μF, RL = 20 Ω Slew Rate Discharge Resistance ON Pin Reference Voltage 2 ON_VIH_INI Initial Turn On Voltage ON_VIL Low Input Voltage on ON pin ON_R Input Impedance on ON pin -- Configurable 1 10% VS to 90% VS TSLEWRATE 11.7 ms ms V/ms -- 0.56 -- V/ms 100 150 300 Ω 0.99 1.05 1.10 V Internal Charge Pump ON 1.2 -- VDD V Internal Charge Pump OFF -0.3 0 0.3 V 100 -- -- MΩ Thermal shutoff turn-on temperature -- 125 -- °C THERMOFF Thermal shutoff turn-off temperature -- 100 -- °C THERMTIME Thermal shutoff time -- -- 1 ms THERMON 000-005NT1462-103 Page 3 of 9 SLG5NT1462V Electrical Characteristics (continued) TA = -40 °C to 85 °C (unless otherwise stated) Parameter Description Conditions TOFF_Delay OFF Delay Time VS Fall Time TFALL Min. Typ. Max. Unit 50% ON to VS Fall, VD = 5 V, RL = 20 Ω, no CL -- 55 70 μs 90% VS to 10% VS, VD = 5 V, RL = 20 Ω, no CL -- 32 -- μs Notes: 1. Refer to table for configuration details. 2. Voltage before ON pin resistor needs to be higher than 1.2 V to generate required ION Slew Rate vs. ON Current Slew Rate (V/ms) Vs. ON Current, T = 25C 10%VS to 90%VS, RL = 20 ohm, CL = 10uF 7.00 6.00 V/ms 5.00 VD = 2.5V 4.00 VD = 3.3V 3.00 VD = 5V VD = 5.25V 2.00 VD = 5.5V 1.00 0.00 0 50 100 150 200 250 ON Current (uA) TTotal_ON vs. On Current Ttotal_on vs ON Current. 50%ON to 90%VS, T = 25C, RL = 20 ohm, CL = 10uF 14.00 12.00 Ttota al_on (ms) 10.00 VD = 2.5V 8.00 VD = 3.3V 6.00 VD = 5V VD = 5.25V 4.00 VD = 5.5V 2.00 0.00 0 50 100 150 200 250 ON Current (uA) 000-005NT1462-103 Page 4 of 9 SLG5NT1462V TTotal_ON, TON_Delay and Slew Rate Measurement ON 50% ON 50% ON TOFF_DELAY 90% VS VS 90% VS TON_DELAY 10% VS 10% VS Slew Rate (V/ms) TFALL TTotal_ON Adjustable Ramp Rate vs. ON Pin Current (5.5 V, 25 °C) I_ON TSLEW (typ) 20 μA 0.56 V/ms 50 μA 1.34 V/ms 100 μA 2.53 V/ms 150 μA 3.71 V/ms 200 μA 4.68 V/ms 250 μA 5.63 V/ms Adjustable Slew Rate (ON2 Pin 2 and ON1 Pin3) SLG5NT1462V has a built in configurable slew control feature. The configurable slew control uses current detection method on ON1/ON2. When ON voltage rise above ON_VIH_INI (1.2 V typical), the slew control circuit will measure the current flowing into ON1/ON2. Based on the current flowing into ON1/ON2, different slew rates will be selected by the internal control circuit. See I_ON vs. Tslew table. The slew rate is configurable by selecting a different R1/R2 resistor value as shown on application diagram. Calculating the R1/R2 value depends on both the desired slew rate, and the VOH level of the device driving the ON1/ON2 pin. ON_Current = (GPIO_VOH – ON_VREF (1.05 V typical)) / R 000-005NT1462-103 Page 5 of 9 SLG5NT1462V Package Top Marking System Definition ABC Serial Number Pin 1 Identifier 000-005NT1462-103 Page 6 of 9 SLG5NT1462V SLG5NT1462V Layout Suggestion Package Drawing and Dimensions 8 Lead STDFN Package 1.0 x 1.6 mm 000-005NT1462-103 Page 7 of 9 SLG5NT1462V Tape and Reel Specifications Max Units Leader (min) Nominal Reel & Package # of Package Size Hub Size Length Type Pins per Reel per Box Pockets [mm] [mm] [mm] STDFN 8L 1x1.6mm 0.4P Green 8 1.0 x 1.6 x 0.55 3,000 3,000 178 / 60 100 400 Trailer (min) Pockets Length [mm] Tape Width [mm] 100 400 8 Part Pitch [mm] 4 Carrier Tape Drawing and Dimensions Pocket BTM Pocket BTM Package Length Width Type STDFN 8L 1x1.6mm 0.4P Green Pocket Depth Index Hole Pitch Pocket Pitch Index Hole Diameter Index Hole Index Hole to Tape to Pocket Tape Width Edge Center A0 B0 K0 P0 P1 D0 E F W 1.12 1.72 0.7 4 4 1.55 1.75 3.5 8 Recommended Reflow Soldering Profile Please see IPC/JEDEC J-STD-020: latest revision for reflow profile based on package volume of 0.88 mm3 (nominal). More information can be found at www.jedec.org. 000-005NT1462-103 Page 8 of 9 SLG5NT1462V Revision History Date Version Change 12/4/2015 1.03 Updated Block Diagram 11/20/2015 1.02 Added ESDCDM, MSL, and θJA specs 000-005NT1462-103 Page 9 of 9