MJD127D

MJD127D Silicon PNP Darlington Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A PC Total Power Dissipation @ Ta=25℃ 1.75 W PC Collector Power Dissipation TC=25℃ 20 W Thermal Resistance,Junction to Ambient 71.4 ℃/W Junction Temperature 150 ℃ -55~150 ℃ Rth j-a TJ Tstg Storage Temperature Range www.slkormicro.com 1 MJD127D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-4A; IB= -16mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A; IB= -80mA -4.0 V VBE(sat) Base-Emitter Saturation Voltage IC=-8A; IB= -80mA -4.5 V VBE(ON) Base-Emitter voltage IC= -4A; VCE= -4V -2.8 V ICEO Collector Cutoff Current VCE=-50V; IE= 0 -10 uA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -2 mA hFE1 DC Current Gain IC= -4A; VCE=- 4V 1000 hFE2 DC Current Gain IC=-8A; VCE= -4V 100 Current-Gain—Bandwidth Product IC=-3A; VCE=- 4V 4 Output Capacitance IE=0; VCB= -10V; f= 1.0MHz fT COB www.slkormicro.com 2 -100 UNIT V 12000 MHz 300 pF MJD127D Package Dimensions www.slkormicro.com 3