GT105N10T
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10T uses advanced trench technology to
provide excellent RDS(ON) , low gate charge. It can be used in
a wide variety of applications.
General Features
l
l
l
l
l
VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
100% Avalanche Tested
<
<
100V
55A
10.5mΩ
15mΩ
Schematic diagram
l RoHS Compliant
Application
l Power switch
l DC/DC converters
TO-220
Ordering Information
Device
Package
Marking
Packaging
GT105N10T
TO-220
GT105N10
50psc/Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
VDS
100
V
ID
55
A
IDM
220
A
Gate-Source Voltage
VGS
±20
V
Power Dissipation
PD
74
W
EAS
72
mJ
TJ, Tstg
-55 To 150
ºC
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
RthJA
78
ºC/W
Maximum Junction-to-Case
RthJC
1.6
ºC/W
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note1)
Single pulse avalanche energy
(note2)
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
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TEL:0755-29961263
FAX:0755-29961466(A1542)
GT105N10T
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
Gate-Source Leakage
Value
Unit
Min.
Typ.
Max.
VGS = 0V, ID = 250µA
100
--
--
V
IDSS
VDS = 100V, VGS = 0V
--
--
1
μA
IGSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
1.7
2.5
V
Drain-Source On-Resistance
RDS(on)
VGS = 10V, ID = 20A
--
8.5
10.5
VGS = 4.5V, ID = 20A
--
10.5
15
Forward Transconductance
gFS
VGS = 5V, ID = 20A
--
59
--
--
1625
--
--
665
--
--
14
--
--
54
--
--
10
--
--
14
--
--
13
--
--
10
--
--
30
--
--
8
--
Static Parameters
mΩ
S
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
VGS = 0V,
VDS = 50V,
f = 1.0MHz
VDD = 50V,
ID = 20A,
VGS = 10V
VDD = 50V,
ID = 20A,
RG = 1.6Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
--
--
55
A
Body Diode Voltage
VSD
TJ = 25ºC, ISD = 20A, VGS = 0V
--
--
1.2
V
Reverse Recovery Charge
Qrr
--
95
--
nC
Reverse Recovery Time
Trr
IF = 20A, VGS = 0V
di/dt=100A/us
--
45
--
ns
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω
3.
Identical low side and high side switch with identical RG
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1542)
GT105N10T
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1542)
GT105N10T
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics
10V
6V
ID, Drain Current (A)
100
120
5V
4.5V
VDS= 5V
ID, Drain Current (A)
120
Figure 2. Transfer Characteristics
4V
80
60
40
VGS= 3V
80
60
40
25℃
20
20
0
100
0
1
2
3
0
4
0
VDS, Drain-to-Source Voltage (V)
Vgs Gate-Source Voltage(V)
RDS(on),On-Resistance(mΩ)
16
14
VGS= 4.5V
10
8
VGS= 10V
6
4
2
0
0
10
20
30
4
6
8
VGS, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
12
2
Figure 4. Gate Charge
10
8
6
4
2
0
40
ID-Drain Current(A)
VDD = 50V,
ID = 20A
0
10
20
30
40
50
60
Qg Gate Charge(nC)
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Is, Reverse Drain Current (A)
3000
Capacitance(pF)
2500
2000
Ciss
1500
Coss
1000
500
Crss
0
0
10
20
30
40
50
60
VDS Drain-Source Voltage(V)
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TEL:0755-29961263
VSD, Source-to-Drain Voltage (V)
FAX:0755-29961466(A1542)
GT105N10T
Typical Characteristics TJ = 25ºC, unless otherwise noted
VGS = 10V,
ID = 20A
VGS = 4.5V,
ID = 20A
Figure 8. Safe Operation Area
ID, Drain Current(A)
RDS(on), (Normalized)
Figure 7. Drain-Source On-Resistance
TJ, Junction Temperature (ºC)
VDS, Drain-Source Voltage(V)
ZthJC, Thermal Impedance (ºC/W)
Figure 9. Normalized Maximum Transient
Thermal Impedance
1.6°C/W
Pulse Width (s)
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1542)
GT105N10T
TO-220 Package Information
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1542)
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