G230P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G230P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. It can be used in a wide
variety of applications.
General Features
l
l
l
l
VDS
ID (at VGS = -10V)
RDS(ON) (at VGS = -10V)
100% Avalanche Tested
-60V
-60A
< 20mΩ
Schematic diagram
l RoHS Compliant
Application
l Power switch
l DC/DC converters
TO-220
Ordering Information
Device
Package
Marking
Packaging
G230P06T
TO-220
G230P06
50pcs/Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
VDS
-60
V
ID
-60
A
IDM
-240
A
Gate-Source Voltage
VGS
±20
V
Power Dissipation
PD
115
W
EAS
81
mJ
TJ, Tstg
-55 To 150
ºC
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
RthJA
60
ºC/W
Maximum Junction-to-Case
RthJC
1.09
ºC/W
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note1)
Single pulse avalanche energy
(note2)
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1725-V1.0)
G230P06T
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
Gate-Source Leakage
Value
Unit
Min.
Typ.
Max.
VGS = 0V, ID = -250µA
-60
--
--
V
IDSS
VDS = -60V, VGS = 0V
--
--
-1
μA
IGSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = -250µA
-2
-2.6
-4
V
Drain-Source On-Resistance
RDS(on)
VGS = -10V, ID = -10A
--
18
20
mΩ
Forward Transconductance
gFS
VDS = -5V,ID = -10A
--
13
--
S
--
4499
--
--
241
--
--
230
--
--
62
--
--
9
--
--
16
--
--
20
--
--
18
--
--
55
--
--
35
--
Static Parameters
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
VGS = 0V,
VDS = -30V,
f = 1.0MHz
VDD = -30V,
ID = -10A,
VGS = -10V
VDD = -30V,
ID = -10A,
RG = 3Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
--
--
-60
A
Body Diode Voltage
VSD
TJ = 25ºC, ISD = -10A, VGS = 0V
--
--
-1.2
V
Reverse Recovery Charge
Qrr
--
71
--
nC
Reverse Recovery Time
Trr
--
49
--
ns
IF = -10A, VGS = 0V
di/dt=-100A/us
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω
3.
Identical low side and high side switch with identical RG
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1725-V1.0)
G230P06T
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1725-V1.0)
G230P06T
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics
70
70
-ID, Drain Current (A)
-6V
-10V
60
-ID, Drain Current (A)
Figure 2. Transfer Characteristics
-5.5V
50
40
-5V
30
20
-4.5V
50
40
25℃
30
20
10
10
0
VDS= -5V
60
VGS= -4V
0
1
2
0
3
4
0
-VDS, Drain-to-Source Voltage (V)
-Vgs Gate-Source Voltage(V)
RDS(on), On-Resistance (mΩ)
35
30
VGS= -10V
15
10
5
0
0
5
10
15
6
8
10
Figure 4. Gate Charge
40
20
4
-VGS, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
25
2
10
8
6
4
2
0
20
-ID-Drain Current (A)
VDD = -30V,
ID = -10A
0
20
40
60
80
Qg Gate Charge(nC)
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Ciss
5000
Capacitance(pF)
-Is, Reverse Drain Current (A)
6000
4000
3000
2000
1000
0
Coss
Crss
0
10
20
30
40
50
60
-VDS Drain-Source Voltage(V)
www.gofordsemi.com
TEL:0755-29961263
-VSD, Source-to-Drain Voltage (V)
FAX:0755-29961466(A1725-V1.0)
G230P06T
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 10. Safe Operation Area
VGS = -10V,
ID = -10A
-ID, Drain Current(A)
RDS(on), (Normalized)
Figure 7. Drain-Source On-Resistance
ZthJC, Thermal Impedance (ºC/W)
TJ, Junction Temperature (ºC)
-VDS, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1725-V1.0)
G230P06T
TO-220 Package Information
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1725-V1.0)
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