G700P06T

G700P06T P-Channel Enhancement Mode Power MOSFET Description The G700P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -60V -25A < 70mΩ < 85mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging G700P06T TO-220 G700P06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -25 A IDM -80 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 100 W EAS 25 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62.5 ºC/W Maximum Junction-to-Case RthJC 1.25 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1619) G700P06T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.6 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -4A -- 58 70 VGS = -4.5V, ID = -3A -- 70 85 Forward Transconductance gFS VDS = -5V,ID = -4A -- 8 -- -- 1428 -- -- 64 -- -- 60 -- -- 23 -- -- 4 -- -- 5 -- -- 8 -- -- 4 -- -- 32 -- -- 7 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -4A, VGS = -10V VDD = -30V, ID = -4A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -25 A Body Diode Voltage VSD TJ = 25ºC, ISD = -4A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 31 -- nC Reverse Recovery Time Trr -- 25 -- ns IF = -4A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1619) G700P06T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1619) G700P06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 30 -10V -6V -5V 25 VDS= -5V -4.5V -ID, Drain Current (A) -ID, Drain Current (A) 30 Figure 2. Transfer Characteristics -4V 20 VGS= -3.5V 15 10 20 15 25℃ 10 5 5 0 25 0 1 2 3 0 4 0 -VDS, Drain-to-Source Voltage (V) -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 120 100 VGS= -4.5V 60 VGS= -10V 20 0 0 2 4 6 VDD = -30V ID = -4A 8 6 4 2 0 5 10 15 20 25 -Is, Reverse Drain Current (A) Capacitance(pF) Ciss 1400 1200 1000 800 600 400 0 6 Figure 6. Source-Drain Diode Forward 2000 Coss 200 5 Qg Gate Charge（nC） Figure 5. Capacitance 1600 4 10 0 8 -ID-Drain Current (A) 1800 3 Figure 4. Gate Charge 140 40 2 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 80 1 Crss 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1619) G700P06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -4A VGS = -4.5V, ID = -3A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1619) G700P06T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1619)