GT040N04TI

GT040N04TI N-Channel Enhancement Mode Power MOSFET Description The GT040N04TI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 40V 110A 4mΩ 5mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging GT040N04TI TO-220 GT040N04I 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 40 V ID 110 A IDM 440 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 160 W EAS 90 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 75 ºC/W Maximum Junction-to-Case RthJC 0.78 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1651) GT040N04TI Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 40 -- -- V IDSS VDS = 40V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A -- 2.5 4 VGS = 4.5V, ID = 10A -- 3.5 5 Forward Transconductance gFS VGS = 5V, ID = 10A -- 28 -- -- 2303 -- -- 435 -- -- 427 -- -- 50 -- -- 6 -- -- 13 -- -- 20 -- -- 9 -- -- 30 -- -- 12 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 10A, VGS = 10V VDD = 20V, ID = 10A, RG = 6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 110 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 50 -- nC Reverse Recovery Time Trr IF = 10A, VGS = 0V di/dt=100A/us -- 75 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1651) GT040N04TI Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1651) GT040N04TI Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 120 10V 4.5V 4V 100 VDS= 5V 80 ID, Drain Current (A) 120 ID, Drain Current (A) Figure 2. Transfer Characteristics 3.5V 60 3V 40 100 80 60 25℃ 40 20 20 VGS= 2.5V 0 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) 2 RDS(on),On-Resistance（mΩ） 5 4 VGS= 4.5V VGS= 10V 1 0 0 5 10 15 8 Figure 4. Gate Charge Vgs Gate-Source Voltage（V） Figure 3. Drain Source On Resistance 2 6 VGS, Gate-to-Source Voltage (V) 6 3 4 10 8 6 4 2 0 20 ID-Drain Current（A） VDD = 20V ID = 10A 0 10 20 30 40 50 60 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Ciss 2500 Capacitance(pF) Is, Reverse Drain Current (A) 3000 2000 1500 Coss 1000 Crss 500 0 0 10 20 30 40 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1651) GT040N04TI Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 10A VGS = 4.5V ID = 10A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 0.78°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1651) GT040N04TI TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1651)