G58N06F
N-Channel Enhancement Mode Power MOSFET
Description
The G58N06F uses advanced trench technology to provide
excellent RDS(ON) , low gate charge. It can be used in a wide
variety of applications.
General Features
l
l
l
l
l
VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
100% Avalanche Tested
60V
35A
< 13mΩ
< 15mΩ
Schematic diagram
l RoHS Compliant
Application
l Power switch
l DC/DC converters
G D
S
TO-220F
Ordering Information
Device
Package
Marking
Packaging
G58N06F
TO-220F
G58N06
50pcs/Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
VDS
60
V
ID
35
A
IDM
140
A
Gate-Source Voltage
VGS
±20
V
Power Dissipation
PD
44
W
EAS
100
mJ
TJ, Tstg
-55 To 150
ºC
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
RthJA
60
ºC/W
Maximum Junction-to-Case
RthJC
2.8
ºC/W
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note1)
Single pulse avalanche energy
(note2)
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
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TEL:0755-29961263
FAX:0755-29961466(A1633)
G58N06F
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
Gate-Source Leakage
Value
Unit
Min.
Typ.
Max.
VGS = 0V, ID = 250µA
60
--
--
V
IDSS
VDS =60V, VGS = 0V
--
--
1
μA
IGSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1
1.9
2.4
V
Drain-Source On-Resistance
RDS(on)
VGS = 10V, ID = 30A
--
10
13
VGS = 4.5V, ID = 25A
--
12
15
Forward Transconductance
gFS
VGS = 5V, ID = 30A
--
83
--
--
3006
--
--
161
--
--
143
--
--
75
--
--
13.5
--
--
19.5
--
--
60
--
--
21
--
--
69
--
--
48
--
Static Parameters
mΩ
S
Dynamic Parameters
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
Turn-off Delay Time
td(off)
Turn-off Fall Time
VGS = 0V,
VDS = 30V,
f = 1.0MHz
VDD = 30V,
ID = 30A,
VGS = 10V
VDD = 30V,
ID = 30A,
RG = 3Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
--
--
35
A
Body Diode Voltage
VSD
TJ = 25ºC, ISD = 30A, VGS = 0V
--
--
1.2
V
Reverse Recovery Charge
Qrr
--
147
--
nC
Reverse Recovery Time
Trr
IF = 30A, VGS = 0V
di/dt=100A/us
--
87
--
ns
Notes
1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω
3.
Identical low side and high side switch with identical RG
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1633)
G58N06F
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1633)
G58N06F
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
120
10V
VDS= 5V
5V
ID, Drain Current (A)
ID, Drain Current (A)
100
4.5V
80
60
4V
40
3.5V
20
0
1
2
80
60
25℃
40
20
VGS= 3V
0
100
3
0
4
0
VDS, Drain-to-Source Voltage (V)
4
6
8
VGS, Gate-to-Source Voltage (V)
Vgs Gate-Source Voltage(V)
Figure 3. Drain Source On Resistance
RDS(on),On-Resistance(mΩ)
2
VGS= 4.5V
VGS= 10V
Figure 4. Gate Charge
10
8
6
4
2
0
ID-Drain Current(A)
VDD = 30V,
ID = 30A
0
20
40
60
80
Qg Gate Charge(nC)
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
Capacitance(pF)
3500
Is, Reverse Drain Current (A)
4000
Ciss
3000
2500
2000
1500
1000
Coss
500
0
Crss
0
10
20
30
40
50
60
VDS Drain-Source Voltage(V)
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TEL:0755-29961263
VSD, Source-to-Drain Voltage (V)
FAX:0755-29961466(A1633)
G58N06F
Typical Characteristics TJ = 25ºC, unless otherwise noted
VGS = 10V,
ID = 30A
VGS = 4.5V,
ID = 25A
Figure 8. Safe Operation Area
ID, Drain Current(A)
RDS(on), (Normalized)
Figure 7. Drain-Source On-Resistance
TJ, Junction Temperature (ºC)
TJ(MAX)=150℃
TC=25℃
VDS, Drain-Source Voltage(V)
ZthJC, Thermal Impedance (ºC/W)
Figure 9. Normalized Maximum Transient
Thermal Impedance
2.8°C/W
Pulse Width (s)
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1633)
G58N06F
TO-220F Package Information
www.gofordsemi.com
TEL:0755-29961263
FAX:0755-29961466(A1633)
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