GT700P08T

GT700P08T P-Channel Enhancement Mode Power MOSFET Description The GT700P08T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -80V -25A < 75mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging GT700P08T TO-220 GT700P08 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -80 V ID -25 A IDM -100 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 125 W EAS 81 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 75 ºC/W Maximum Junction-to-Case RthJC 1 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1560-V1.2) GT700P08T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -80 -- -- V IDSS VDS = -80V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2.0 -3.0 -4.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -2A -- 58 75 mΩ Forward Transconductance gFS VDS = -5V,ID = -2A -- 6 -- S -- 1639 -- -- 125 -- -- 6 -- -- 75 -- -- 16 -- -- 19 -- -- 18 -- -- 20 -- -- 55 -- -- 35 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -40V, f = 1.0MHz VDD = -40V, ID = -2A, VGS = -10V VDD = -40V, ID = -2A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -25 A Body Diode Voltage VSD TJ = 25ºC, ISD = -2A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 71 -- nC Reverse Recovery Time Trr -- 49 -- ns IF = -2A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1560-V1.2) GT700P08T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1560-V1.2) GT700P08T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 30 -10V -5V -6V 25 -ID, Drain Current (A) -ID, Drain Current (A) 30 Figure 2. Transfer Characteristics -4.5V 20 15 -4V 10 VGS= -3.8V 25 20 15 25℃ 10 5 5 0 VDS= -5V 0 1 2 3 4 0 5 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 90 80 70 60 VGS= -10V 40 30 0 1 2 3 8 Figure 4. Gate Charge 100 20 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 50 4 10 8 6 4 2 0 4 -ID-Drain Current (A) VDD = -40V ID = -2A 0 10 20 30 40 50 60 70 80 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward 1800 Ciss 1600 Capacitance(pF) -Is, Reverse Drain Current (A) 2000 1400 1200 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 50 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1560-V1.2) GT700P08T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area Figure 7. Drain-Source On-Resistance VGS = -10V ID = -2A 1.3 -ID, Drain Current(A) RDS(on), (Normalized) 1.4 1.2 1.1 1 0.9 0.8 0 25 50 75 100 125 150 175 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (ºC/W) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 1C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1560-V1.2) GT700P08T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1560-V1.2)