GT042P06T

GT042P06T P-Channel Enhancement Mode Power MOSFET Description The GT042P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) RDS(ON) (at VGS = -4.5V) 100% Avalanche Tested -60V -160A < 4.5mΩ < 7.0mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging GT042P06T TO-220 GT042P06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -160 A IDM -640 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 280 W EAS 900 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 0.45 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1762-V1.0) GT042P06T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.3 -2.3 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -15A -- 3.7 4.5 VGS = -4.5V, ID = -15A -- 5.5 7.0 Forward Transconductance gFS VDS = -5V,ID = -15A -- 42 -- -- 9151 -- -- 1468 -- -- 365 -- -- 305 -- -- 33 -- -- 82 -- -- 24 -- -- 36 -- -- 301 -- -- 80 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -15A, VGS = -10V VDD = -30V, ID = -15A, RG = 1.6Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -160 A Body Diode Voltage VSD TJ = 25ºC, ISD = -15A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 352 -- nC Reverse Recovery Time Trr -- 95 -- ns IF = -15A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1762-V1.0) GT042P06T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1762-V1.0) GT042P06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics -ID, Drain Current (A) 90 80 100 -5V -10V -5.5V 70 60 -4V 50 40 30 20 10 0 1 2 80 70 60 50 25℃ 40 30 20 10 VGS = -3.5V 0 VDS = -5V 90 -4.5V -ID, Drain Current (A) 100 Figure 2. Transfer Characteristics 3 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 7 6 VGS = -4.5V 4 VGS = -10V 2 1 0 0 5 10 15 20 25 8 Figure 4. Gate Charge 8 3 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 5 4 10 8 6 4 2 0 30 VDD = -30V, ID = -15A 0 50 100 -ID-Drain Current (A) 150 200 250 300 350 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 10000 -Is, Reverse Drain Current (A) 12000 Ciss 8000 6000 4000 Coss 2000 0 Crss 0 10 20 30 40 50 25℃ 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com 150℃ TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1762-V1.0) GT042P06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V, ID = -15A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1762-V1.0) GT042P06T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1762-V1.0)