GT080N10T

GT080N10T N-Channel Enhancement Mode Power MOSFET Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 100V 65A 8mΩ 9.5mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging GT080N10T TO-220 GT080N10 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 100 V ID 65 A IDM 260 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 100 W EAS 144 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 45 ºC/W Maximum Junction-to-Case RthJC 1.25 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1825-V1.0) GT080N10T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 100 -- -- V IDSS VDS = 100V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 6.5 8.0 VGS = 4.5V, ID = 20A -- 8.0 9.5 Forward Transconductance gFS VGS = 5V, ID = 20A -- 47 -- -- 2531 -- -- 396 -- -- 13 -- -- 35 -- -- 8 -- -- 5 -- -- 10 -- -- 4 -- -- 31 -- -- 6 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 50V, f = 1.0MHz VDD = 50V, ID = 20A, VGS = 10V VDD = 50V, ID = 20A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 65 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 170 -- nC Reverse Recovery Time Trr IF = 20A, VGS = 0V di/dt=500A/us -- 34 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1825-V1.0) GT080N10T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1825-V1.0) GT080N10T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 120 10V 4V 80 60 3.5V 40 3V 20 0 VGS = 2.5V 0 1 2 3 RDS(on),On-Resistance（mΩ） 80 60 25℃ 40 0 4 0 2 4 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 16 14 12 10 VGS = 4.5V 8 6 VGS = 10V 4 2 0 VDS = 5V 100 20 Vgs Gate-Source Voltage（V） ID, Drain Current (A) 100 ID, Drain Current (A) 4.5V 0 10 20 30 10 VDD DD = 50V, IDD = 20A 8 6 4 2 0 40 8 0 10 ID-Drain Current（A） 20 30 40 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Capacitance(pF) 3000 Is, Reverse Drain Current (A) 3500 Ciss 2500 2000 1500 Coss 1000 500 0 Crss 0 10 20 30 40 50 25℃ 60 VDS Drain-Source Voltage(V) www.gofordsemi.com 150℃ TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1825-V1.0) GT080N10T Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V, ID = 20A VGS = 4.5V, ID = 20A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1825-V1.0) GT080N10T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1825-V1.0)