TSM60NC165CI C0G

TSM60NC165CI Taiwan Semiconductor N-Channel Power MOSFET 600V, 24A, 165mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Super-Junction technology PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 165 mΩ Qg 44 nC ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS & Rg tested ● High commutation performance ● ROHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 24 A 15 A IDM 72 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PD 89 W Single Pulse Avalanche Energy (Note 3) EAS 450 mJ Single Pulse Avalanche Current (Note 3) IAS 4.2 A TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.4 °C/W Junction to Ambient Thermal Resistance RӨJA 60 °C/W Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: B2209 TSM60NC165CI Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 1mA VGS(TH) 3 3.9 5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 100 µA Drain-Source On-State Resistance VGS = 10V, ID = 11.3A RDS(on) -- 150 165 mΩ Qg -- 44 -- Qgs -- 13 -- Qgd -- 18 -- Ciss -- 1857 -- Coss -- 53 -- Crss -- 13 -- Rg -- 1.6 3.2 td(on) -- 30 -- tr -- 50 -- td(off) -- 60 -- tf -- 12 -- Body-Diode Continuous Forward Current IS -- -- 20 A Body-Diode Pulsed Current ISM -- -- 60 A VSD -- 0.9 1.4 V Dynamic (Note 5) Total Gate Charge VDS = 300V, ID = 24A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 300V, VGS = 0V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 300V, RG = 10Ω, Turn-Off Delay Time ID = 15A, VGS = 10V Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward Voltage IS = 20A, VGS = 0V Reverse Recovery Time IS = 20A trr -- 410 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 8.5 -- μC Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 50mH, IAS = 4.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM60NC165CI C0G ITO-220 50pcs / Tube 2 Version: B2209 TSM60NC165CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 20 20 VGS=8V VGS=7V ID, Drain Current (A) ID, Drain Current (A) VGS=10V 15 VGS=6V 10 VGS=5.5V 5 15 150℃ 10 25℃ 5 -55℃ 0 0 0 2 4 6 8 0 10 2 On-Resistance vs. Drain Current 0.25 0.2 0.15 0.1 VGS=10V 0 0 5 10 15 8 6 4 VDS=300V ID=24A 2 0 0 20 10 2.5 2 1.5 1 VGS=10V ID=12A 0 25 50 30 40 50 75 100 125 150 175 On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Ω) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Junction Temperature 0 20 Qg, Gate Charge (nC) 3 -75 -50 -25 10 10 ID, Drain Current (A) 0.5 8 Gate-Source Voltage vs. Gate Charge 0.3 0.05 6 VGS, Gate to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) VDS, Drain to Source Voltage (V) 4 TJ, Junction Temperature (°C) 0.3 0.2 0.1 ID =12A 0 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: B2209 TSM60NC165CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 10000 1.1 CISS 1000 100 BVDSS (Normalized) Drain-Source Breakdown Voltage 1.2 100000 COSS ID=1mA 1 0.9 10 CRSS 1 0 100 200 300 400 500 600 0.8 -100 VDS, Drain to Source Voltage (V) 0 50 100 150 200 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 100 IS, Reverse Drain Current (A) RDS(ON)=165mΩ ID, Drain Current (A) -50 10 1 SINGLE PULSE RӨJC=1.4°C/W TC=25°C 0.1 10 150℃ 1 -55℃ 25℃ 0.1 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Effective Transient Thermal Impedance, ZӨJC Normalized Thermal Transient Impedance, Junction-to-Case 10 SINGLE PULSE RӨJC=1.4°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1 t, Square Wave Pulse Duration (sec) 4 Version: B2209 TSM60NC165CI Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM TSC 60NC165 YWWLF Y WW L F = Year Code = Week Code (01~52) = Lot Code (1~9,A~Z) = Factory Code 5 Version: B2209 TSM60NC165CI Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: B2209