TSM035NB04LCZ C0G

TSM035NB04LCZ Taiwan Semiconductor N-Channel Power MOSFET 40V, 157A, 3.5mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT VDS 40 V ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg Tested RDS(on) (max) ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 VGS = 10V 3.5 VGS = 4.5V 4.2 mΩ Qg 110 nC APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC Converter TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C (Note 1) ID TA = 25°C Pulsed Drain Current (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 157 18 A IDM 628 A IAS EAS 37 205 A mJ PD PD 156 31 2 0.4 W W TJ, TSTG - 55 to +150 °C SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance RӨJC 0.8 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A2010 TSM035NB04LCZ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.7 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 2.5 3.5 -- 3.2 4.2 gfs -- 64 -- Qg -- 111 -- Qg -- 56 -- Qgs -- 20 -- Qgd -- 25 -- Ciss -- 6350 -- Coss -- 659 -- Crss -- 388 -- Rg 0.5 1.8 3.6 td(on) -- 12 -- tr -- 68 -- td(off) -- 71 -- tf -- 76 -- VSD -- -- 1 V VGS = 0V, VDS = 40V Drain-Source Leakage Current IDSS VGS = 0V, VDS = 40V TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 18A (Note 3) VGS = 4.5V, ID = 16A Forward Transconductance Dynamic (Note 3) RDS(on) VDS = 10V, ID = 18A µA mΩ S (Note 4) VGS = 10V, VDS = 20V, Total Gate Charge ID = 18A Total Gate Charge VGS = 4.5V, VDS = 20V, Gate-Source Charge ID = 16A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 20V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 20V, Turn-Off Delay Time ID = 18A, RG = 2Ω Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 18A Reverse Recovery Time IS = 18A, trr -- 28 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 17 -- nC Notes: 1. 2. 3. 4. Silicon limited current only. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 37A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE TSM035NB04LCZ C0G PACKAGE PACKING TO-220 50pcs / Tube 2 Version: A2010 TSM035NB04LCZ Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 50 50 ID, Drain Current (A) 30 ID, Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 40 20 40 30 150℃ 20 -55℃ 25℃ 10 10 0 0 0 1 2 3 4 0 1 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 10 0.006 0.005 0.004 VGS=4.5V 0.003 0.002 VGS=10V 0.001 0 0 10 20 30 40 VDS=20V ID=18A 8 6 4 2 0 50 0 20 ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Ω) VGS=10V ID=18A 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -75 -50 -25 0 25 50 75 60 80 100 120 On-Resistance vs. Gate-Source Voltage 2 1.8 40 Qg, Gate Charge (nC) On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Normalized) 2 VGS, Gate to Source Voltage (V) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) VDS, Drain to Source Voltage (V) 100 125 150 TJ, Junction Temperature (°C) 0.02 0.015 0.01 ID=18A 0.005 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) 3 Version: A2010 TSM035NB04LCZ Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage C, Capacitance (pF) 9000 8000 CISS 7000 6000 5000 4000 3000 2000 COSS 1000 CRSS 0 0 5 10 15 20 25 1.2 ID=1mA 1.1 1 0.9 0.8 30 -75 -50 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 RDS(ON) ID, Drain Current (A) -25 100 10 SINGLE PULSE RӨJC=0.8°C/W TC=25°C 1 10 150℃ 25℃ 1 -55℃ 0.1 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=0.8°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: A2010 TSM035NB04LCZ Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-220 MARKING DIAGRAM TSC 035NB04L YWWLF Y WW L F = Year Code = Week Code (01~52) = Lot Code (1~9,A~Z) = Factory Code 5 Version: A2010 TSM035NB04LCZ Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: A2010