CC-CN-23-0123

Gen-I MOSFET with body diode | 2 0 A - 1 2 0 0 V SiC MOSFET | CC-CN-23-0123 TO - 247- 3 SiC Power MOSFETs BENEFITS CoolCAD Power MOSFETs exceed power, efficiency and portability capabilities of standard silicon devices and are available in a variety of breakdown voltages (650V, 1200V, 1700V & 3300V) and current ratings. They have low on-resistance and low leakage in the blocking state. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication process includes carefully chosen annealing procedures to ensure a high-quality SiC-SiO2 gate oxide dielectric layer. Doping profile, neck region, and edge termination ensure extremely low Ron and high breakdown voltage. Higher efficiency Reduced cooling Increased power Reduced system volume APPLICATIONS INCLUDE Electromechanical power converters, DC to DC, AC to DC and DC to AC converters, switching power supplies, electric vehicles, hybrid vehicles, solar and wind energy power converters. Part Number Package Marking CC-CN-23-0123 TO-247-3 CoolCADElectronics * For description only. No rights are granted. No liability is assumed for choice of products. contact@coolcadelectronics.com College Park, Maryland https://coolcadelectronics.com Gen-I MOSFET with body diode | 2 0 A – 1 2 0 0 V SiC MOSFET Maximum Ratings *Characteristics Symbol DC blocking voltage VDSmax Gate input voltage range Comments TJ=25°C to 175°C VGS Avalanche rating VAVA Pulsed drain current IDpulsed -5 Dynamic VGS=0V; ID= 0.1mA; TJ=25°C VGS=0V; ID= 0.1mA; TJ=175°C VGS=15V; TJ=25°C -5 1200 1200 Max Units V 15 18 1388 1425 20 V V VGS=15V; TJ=175°C 14 A 18 12 A 100 Continuous drain current ID Continuous drain power P VGS=15V; TJ=25°C TJmax Typ 1200 Recommended range VGS=15V; TJ=25°C VGS=15V; TJ=175°C Maximum- junction temperature Min W Normal operation 175 During processing / soldering 250 °C Electrical and Thermal Characteristics *Characteristics Comments Symbol Gate threshold voltage VTH Gate leakage IGSS Drain leakage IDSS Drain-source on-resistance RDSON Transconductance Gm Min Typ Max Units VGS=VDS; IDS=5mA; TJ=25°C 2.4 VGS=VDS; IDS=5mA; TJ=175°C 1.3 V VGS=15V; VDS=0; TJ=25°C 45 80 pA 4.5 5.5 nA µA VGS=15V; VDS=0; TJ=175°C VDS=1000V; VGS=0; TJ=25°C VDS=1000V; VGS=0; TJ=175°C VGS=15V; IDS=5A; TJ=25°C 83 VGS=15V; IDS=5A; TJ=175°C VDS=10V; IDS=20A; TJ=25°C 133 VDS=10V; IDS=20A; TJ=175°C mΩ 9 8.6 S Input capacitance CISS VGS=0V; VDS=200V; f=1MHz; TJ=25°C 810 pF Output capacitance COSS VGS=0V; VDS=200V; f=1MHz; TJ=25°C 108 pF Reverse transfer capacitance CRSS 19 pF Stored energy at output EOSS 4.3 µJ Turn on switching energy EON VGS=0V; VDS=200V; f=1MHz; TJ=25°C VGS=-5/15V; VDS=200V; f=1MHz; TJ=25°C VGS=-5/15V; VDS=200V; 16.6 µJ Turn off switching energy EOFF Rise time tR Fall time tF Turn off delay time tD Gate Charge QG Internal gate resistance RG Thermal resistance:Junction to Case RJC contact@coolcadelectronics.com f=1MHz; TJ=25°C VGS=-5/15V; VDS=200V; µJ f=1MHz; TJ=25°C VGS=-5/15V; VDS=1kV; ID=10A; 4.8 RG=0Ω; TJ=25°C 15 ns 10 ns 17 ns 16 nC VGS=-5/15V; VDS=1kV; ID=10A; RG=0Ω; TJ=25°C VGS=-5/15V; VDS=200V; ID=10A; RG=0Ω; TJ=25°C VGS=-5/15V; VDS=200V; ID=10A; RG=0Ω; TJ=25°C f=1Mz; VAC=25mV; TJ=25°C College Park, Maryland 5 Ω 1.5 °C/W https://coolcadelectronics.com Gen-I MOSFET with body diode | 2 0 A - 1 2 0 0 V SiC MOSFET Body diode characteristics *Characteristics Diode forward voltage Symbol Comments IF=3A; VGS=0V TJ=25°C 2.6 VF IF=3A; VGS=0V TJ=175°C 2.1 VGS=0V; VDS=-3V; TJ=25°C 5.8 VGS=0V; VDS=-3V; TJ=175°C 8.9 Min Typ Pulsed diode current ISpulsed Reverse recovery time trr VDS=0-200V; VGS=0V; T=25°C 7 Reverse recovery charge Qrr VDS=0-200V; VGS=0V; T=25°C 28.9 Figure 1: Room temperature output characteristics. VGS = 0, 5, 10, 15V; TJ = 25ºC. Figure 3: On-Resistance vs. Drain Current. TJ = 25, 175ºC. contact@coolcadelectronics.com Max Units V A ns nC Figure 2: High temperature output characteristics. VGS = 0, 5, 10, 15V; TJ = 175ºC. Figure 4: Drain Current vs. Threshold Voltage. TJ = 25, 175ºC. College Park, Maryland https://coolcadelectronics.com Gen-I MOSFET with body diode | 2 0 A – 1 2 0 0 V SiC MOSFET Figure 5: Capacitances vs. Drain-Source Voltage. TJ = 25. Figure 7: Transconductance vs. Drain Current. TJ = 25, 175ºC. Figure 6: Transfer Characteristics. TJ = 25, 175ºC. Figure 8: Body Diode Characteristics. TJ = 25, 175ºC. CAUTION: These devices are ESD sensitive. Use proper handling procedures. Disclaimer: These specifications may not be considered as a guarantee of components characteristics. Components have to be tested depending on intended application as adjustments may be necessary. The use of CoolCAD Electronics components in life support appliances and systems are subject to written approval of CoolCAD Electronics. © 2023 CoolCAD Electronics. All rights reserved. CoolCAD Electronics reserves the right to change without notice the specifications and information contained within. contact@coolcadelectronics.com College Park, Maryland Page 4 of 4. Revision 1 Feb-07 https://coolcadelectronics.com