TP65H035G4WSQA

TP65H035G4WSQA 650V SuperGaN® FET in TO-247 (source tab) Description The TP65H035G4WSQS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package Package Configuration TP65H035G4WSQA 3 lead TO-247 Source TP65H035G4WSQA TO-247 (top view) S G S Sept. 28, 21 tp65h035G4wsqa.1v1  AEC-Q101 qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Wide gate safety margin — Transient over-voltage capability  Enhanced inrush current capability  Very low QRR  Reduced crossover loss Benefits  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Achieves increased efficiency in both hard- and softswitched circuits  Easy to drive with commonly-used gate drivers  GSD pin layout improves high speed design Applications  Automotive  Datacom  Broad industrial  PV inverter  Servo motor Key Specifications VDSS (V) VDSS(TR)(V)* 650 800 RDS(on)eff (mΩ) max** 41 QRR (nC) typ 150 QG (nC) typ 22 *Pulse condition, see note on Page2 * *Dynamic on-resistance; see Figures 19 and 20 D Cascode Schematic Symbol Features Cascode Device Structure © 2019 Transphorm Inc. Subject to change without notice. 1 TP65H035G4WSQA Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS VDSS(TR) VGSS PD ID IDM TC TJ TS TSOLD Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 175°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±20 Maximum power dissipation @TC=25°C 187 W Continuous drain current @TC=25°C b 47.2 A Continuous drain current @TC=100°C b 33.4 A Pulsed drain current (pulse width: 10µs) 240 A Case -55 to +175 °C Junction -55 to +175 °C -55 to +175 °C 260 °C Typical Unit Operating temperature Storage temperature Soldering peak temperature C V Notes: a. In off-state, spike duty cycle D