TP65H015G5WS

TP65H015G5WS 650V SuperGaN™ FET in TO-247 (source tab) Description Features The TP65H015G5WS 650V, 15 mΩ gallium nitride GaN FET is a normally-off device using Transphorm’s Gen V platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen V SuperGaN™ platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature • AN0009: Recommended External Circuitry for GaN FETs • AN0003: Printed Circuit Board Layout and Probing • AN0010: Paralleling GaN FETs Ordering Information Part Number Package Package Configuration TP65H015G5WS 3 lead TO-247 Source TP65H015G5WS TO-247 (top view) S • JEDEC qualified GaN technology • Dynamic RDS(on)eff production tested • Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability • Very low QRR • Reduced crossover loss Benefits • Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost • Achieves increased efficiency in both hard- and softswitched circuits • Easy to drive with commonly-used gate drivers • GSD pin layout improves high speed design Applications • • • • Datacom Broad industrial PV inverter Servo motor Key Specifications VDSS (V) 650 V(TR)DSS (V) 725 RDS(on)eff (mΩ) max* G S D 18 QRR (nC) typ 430 QG (nC) typ 74 * Dynamic on-resistance; see Figures 18 and 19 Cascode Schematic Symbol July. 12, 2021 tp65h015G5ws.1v0 Cascode Device Structure © 2019 Transphorm Inc. Subject to change without notice. 1 TP65H015G5WS Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS V(TR)DSS VGSS PD ID IDM TC TJ TS TSOLD Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 725 Gate to source voltage ±20 Maximum power dissipation @TC=25°C 266 W Continuous drain current @TC=25°C b 93 A Continuous drain current @TC=100°C b 59 A Pulsed drain current (pulse width: 10µs) 600 A Case -55 to +150 °C Junction -55 to +150 °C -55 to +150 °C 260 °C Typical Unit 0.47 °C/W 40 °C/W Operating temperature Storage temperature Soldering peak temperature c V Notes: a. In off-state, spike duty cycle D