GP2T080A120U

GP2T080A120U VDS RDS,on ID (TC=25C) TJ,max 1200V SiC MOSFET Features 1200 V 77 mΩ 35 A 175°C Package • High speed switching • Reliable body diode • All parts tested to above 1400V • Avalanche tested to 200mJ (1) G (Gate) (2) D (Drain) Benefits (3) S (Source) • Lower capacitance • Higher system efficiency • Easy to parallel Applications • Solar Inverters • Switch mode power supplies, UPS • Induction Heating and Welding • EV charging stations • High Voltage DC/DC Converters • Motor Drives Part # Package Marking GP2T080A120U TO-247-3L 2T080A120 Maximum Ratings, at TJ=25°C, unless otherwise specified Characteristics Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Power Dissipation Operating & Storage Temperature Single Pulse Avalanche Energy Symbol Vrated ID ID,pulse Conditions VGS=0V, ID=1μA Unit 1200 V TC=25°C, VGS=20V 35 TC=100°C, VGS=20V 26 TC=25°C 80 A -10/25 VGSmax VGSop Values Recommended operational TC=25°C V -5/20 Ptot TJ, Tstorage Continuous L=1mH, IAS=20.0A, V=50V EAS 188 W -55...175 °C 200 mJ Thermal Characteristics Characteristics Symbol Conditions Values min. typ. max. Thermal Resistance, Junction to Case RthJC - 0.65 0.80 Thermal Resistance, Junction to Ambient RthJA - - 40.0 Rev. 1.0, 9/9/2021 Unit o www.SemiQ.com C/W p.1 GP2T080A120U 1200V SiC MOSFET Static Electrical Characteristics, at TJ=25°C, unless otherwise specified Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On-Resistance Gate Input Resistance Symbol Conditions VGS=0V, ID=1mA Values min. typ. max. 1200 - - VDS=1200V, VGS=0V - 0.1 1.0 VDS=1200V, VGS=0V, TJ=175°C - 1 - IGSS+ VGS=20V, VDS=0V - -10 -100 VGS=VDS, ID=10mA 2 2.8 4 VGS=VDS, ID=10mA, TJ=125°C - 2.1 - VGS=VDS, ID=10mA, TJ=175°C - 1.9 - VGS=20V, ID=20A - 77 100 VGS=20V, ID=10A - 71 90 VGS=20V, ID=20A, TJ=125oC - 106 - VGS=20V, ID=20A, TJ=175oC f=1MHz, VAC=25mV, D-S Short - 134 - - 3.0 - BVDSS IDSS VGS(th) RDSon RG Unit V µA nA V mΩ Ω AC Electrical Characteristics, at TJ=25°C, unless otherwise specified Characteristics Symbol Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Coss Stored Energy EOSS Turn-On Switching Energy EON Turn-Off Switching Energy EOFF Total Switching Energy ETOT Turn-On Switching Energy EON Turn-Off Switching Energy EOFF Total Switching Energy ETOT Turn-On Delay Time tD(on) Rise Time tR Turn-Off Delay Time Fall Time tD(off) tF Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Conditions Values min. typ. max. - 1377 - - 62 - - 4 - - 38 - VDD=800V, IDS=20A, RG(ext)=2.5Ω, VGS=-5/+20V, L=975µH, FWD = GP2T080A120U - 410 - - 22 - - 432 - VDD=800V, IDS=20A, RG(ext)=2.5Ω, VGS=-5/+20V, L=975µH, FWD = GP3D010A120A - 339 - - 23 - - 362 - - 10 - - 6 - - 16 - - 10 - - 58 - - 18 - - 17 - VGS=0V VDS=1000V f=200kHz. Vac=25mV VDD=800V, IDS=20A, RG(ext)=2.5Ω, VGS=-5V/20V, L=975µH, FWD = GP2T080A120U VDD=800V, IDS=20A VGS=-5/20V Unit pF µJ µJ ns nC Body Diode Characteristics, at TJ=25°C, unless otherwise specified Characteristics Max Continuous Diode Fwd Current Symbol IS Diode Forward Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Peak Reverse Recovery Current IRRM Rev. 1.0, 9/9/2021 Conditions Values Unit min. typ. max. VGS=-5V, TC=25°C - - 43 VGS=-5V, IS=10A - 3.8 - V - 26 - ns - 124 - nC - 8 - A IS=20A, VR=800V, VGS=-5V diF/dt=3500A/us www.SemiQ.com A p.2 GP2T080A120U 1200V SiC MOSFET Typical Performance Figure 1. Output Characteristics TJ = -55°C Figure 2. Output Characteristics TJ = 25°C Figure 3. Output Characteristics TJ = 125°C Figure 4. Output Characteristics TJ = 175°C Rev. 1.0, 9/9/2021 www.SemiQ.com p.3 GP2T080A120U 1200V SiC MOSFET Figure 5. Normalized On-Resistance vs. Temperature Figure 6. On-Resistance vs. Drain Current For Various Temperature Figure 7. On-Resistance vs. Temperature For Various Gate Voltages Figure 8. Transfer Characteristic for Various Junction Temperatures Rev. 1.0, 9/9/2021 www.SemiQ.com p.4 GP2T080A120U 1200V SiC MOSFET Figure 9. Body Diode Characteristics at TJ = -55°C Figure 10. Body Diode Characteristics at TJ = 25°C Figure 11. Body Diode Characteristics at TJ = 175°C Figure 12. Threshold Voltage vs. Temperature Rev. 1.0, 9/9/2021 www.SemiQ.com p.5 GP2T080A120U 1200V SiC MOSFET Figure 13. Gate Charge Characteristics Figure 14. Output Capacitor Stored Energy Figure 15. Capacitance vs Drain-Source Voltage Figure 16. Continuous Drain Current Derating vs. Case Temperature Rev. 1.0, 9/9/2021 www.SemiQ.com p.6 GP2T080A120U 1200V SiC MOSFET Figure 17. Maximum Power Dissipation Derating vs Case Temperature Figure 18. Transient Thermal impedance (Junction to Case) Figure 19. Safe Operating Area Figure 20. Clamped Inductive Switching Energy vs. Drain Current Rev. 1.0, 9/9/2021 www.SemiQ.com p.7 GP2T080A120U 1200V SiC MOSFET Figure 21. Clamped Inductive Switching Energy vs. RG(ext) Figure 22. Clamped Inductive Switching Energy vs. Temperature Figure 23. Switching Times vs RG(ext) Figure 24. Turn-off Transient Definitions Rev. 1.0, 9/9/2021 www.SemiQ.com p.8 GP2T080A120U 1200V SiC MOSFET Figure 25. Turn-on Transient Definitions Figure 26. Reverse Recovery Definitions Package Dimensions TO-247-3L Sym A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 ØP ØP1 Q S Rev. 1.0, 9/9/2021 www.SemiQ.com Millimeters Min Max 4.70 5.31 2.21 2.59 1.50 2.49 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 20.80 21.46 13.08 17.65 0.51 1.35 15.49 16.26 13.46 14.16 3.43 5.49 5.44 BSC 19.81 20.32 4.10 4.50 3.56 3.66 7.06 7.39 5.39 6.20 6.04 6.30 Inches Min Max 0.185 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.819 0.845 0.515 0.695 0.020 0.053 0.610 0.640 0.530 0.557 0.135 0.216 0.214 BSC 0.780 0.800 0.161 0.177 0.140 0.144 0.278 0.291 0.212 0.244 0.238 0.248 p.9 GP2T080A120U 1200V SiC MOSFET Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. Rev. 1.0, 9/9/2021 www.SemiQ.com p.10