G630J

G630J N-Channel Enhancement Mode Power MOSFET Description The G630J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) 100% Avalanche Tested < 200V 11A 250mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-251 Ordering Information Device Package Marking Packaging G630J TO-251 630A 75pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 200 V ID 11 A IDM 44 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 83 W EAS 320 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 1.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0352-V1.1) G630J Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 200 -- -- V IDSS VDS = 200V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.6 3.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 4.5A -- 201 250 mΩ Forward Transconductance gFS VGS = 5V, ID = 4.5A -- 9.2 -- S -- 515 -- -- 47 -- -- 13 -- -- 12 -- -- 2 -- -- 4 -- -- 10.3 -- -- 10.7 -- -- 29 -- -- 11 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 100V, f = 1.0MHz VDD = 100V, ID = 4.5A, VGS = 10V VDD = 100V, ID = 4.5A, RG = 10Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 11 A Body Diode Voltage VSD TJ = 25ºC, ISD = 4.5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr -- 663 -- nC Reverse Recovery Time Trr IF = 4.5A, VGS = 0V di/dt=100A/us -- 201 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0352-V1.1) G630J Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0352-V1.1) G630J Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 6 10V 5 VDS = 5V 3V 4.5V 4 ID, Drain Current (A) 6 2.7V 3 2.5V 2 VGS = 2.2V 1 0 0 1 2 3 RDS(on),On-Resistance（mΩ） 3 25℃ 2 0 1 2 3 4 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance Figure 4. Gate Charge 240 220 200 VGS = 10V 180 160 0 4 0 4 260 140 5 1 Vgs Gate-Source Voltage（V） ID, Drain Current (A) Figure 2. Transfer Characteristics 2 4 6 8 10 ID-Drain Current（A） VDD = 100V, ID = 4.5A 8 6 4 2 0 10 5 0 3 6 9 12 15 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Is, Reverse Drain Current (A) 1400 Capacitance(pF) 1200 1000 800 Ciss 600 400 Coss 200 0 Crss 0 10 20 30 40 50 60 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A0352-V1.1) G630J Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 10V, ID = 4.5A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) TJ(MAX)=150℃ TC=25℃ VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 1.5°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0352-V1.1) G630J TO-251 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0352-V1.1)