G70N04T

G70N04T N-Channel Enhancement Mode Power MOSFET Description The G70N04T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l VDS ID (at VGS = 10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 100% Avalanche Tested < < 40V 70A 7mΩ 9mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging G70N04T TO-220 G70N04 50psc/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS 40 V ID 70 A IDM 280 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 104 W EAS 56 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 15 ºC/W Maximum Junction-to-Case RthJC 1.2 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1334) G70N04T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = 250µA 40 -- -- V IDSS VDS = 40V, VGS = 0V -- -- 1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.1 1.7 2.4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 6 7 VGS = 4.5V, ID = 20A -- 7.5 9 Forward Transconductance gFS VGS = 5V, ID = 30A -- 89 -- -- 2169 -- -- 179 -- -- 159 -- -- 50 -- -- 12 -- -- 13 -- -- 11 -- -- 10 -- -- 38 -- -- 11 -- Static Parameters mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = 20V, f = 1.0MHz VDD = 20V, ID = 30A, VGS = 10V VDD = 20V, ID = 30A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- 70 A VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1334) G70N04T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1334) G70N04T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics 120 10V 6V 5V 100 4.5V ID, Drain Current (A) 120 ID, Drain Current (A) Figure 2. Transfer Characteristics 4V 80 60 40 VGS= 3.5V 20 0 VDS= 5V 100 80 60 40 25℃ 20 0 1 2 3 0 4 0 VDS, Drain-to-Source Voltage (V) 2 Vgs Gate-Source Voltage（V） RDS(on),On-Resistance（mΩ） 9 8 VGS= 4.5V VGS= 10V 5 4 0 10 20 30 40 50 8 Figure 4. Gate Charge 10 6 6 VGS, Gate-to-Source Voltage (V) Figure 3. Drain Source On Resistance 7 4 10 8 6 4 2 0 60 ID-Drain Current（A） VDD = 20V ID = 20 0 10 20 30 40 50 Qg Gate Charge（nC） Figure 5. Capacitance Figure 6. Source-Drain Diode Forward Ciss 2500 Capacitance(pF) Is, Reverse Drain Current (A) 3000 2000 1500 1000 Coss 500 0 Crss 0 10 20 30 40 VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1334) G70N04T Typical Characteristics TJ = 25ºC, unless otherwise noted VGS = 10V ID = 30A Figure 8. Safe Operation Area ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance 1.2°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1334) G70N04T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1334)