G300P06T

G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -10V) 100% Avalanche Tested -60V -40A < 30mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TO-220 Ordering Information Device Package Marking Packaging G300P06T TO-220 G300P06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -60 V ID -40 A IDM -160 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 50 W EAS 110 mJ TJ, Tstg -55 To 150 ºC Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62.5 ºC/W Maximum Junction-to-Case RthJC 2.5 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Single pulse avalanche energy （note2） Operating Junction and Storage Temperature Range Thermal Resistance Parameter www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1606) G300P06T Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -60 -- -- V IDSS VDS = -60V, VGS = 0V -- -- -1 μA IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.5 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -12A -- 25 30 mΩ Forward Transconductance gFS VDS = -5V,ID = -12A -- 13 -- S -- 2736 -- -- 178 -- -- 153 -- -- 49 -- -- 10 -- -- 13 -- -- 15 -- -- 12 -- -- 38 -- -- 15 -- Static Parameters Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -30V, f = 1.0MHz VDD = -30V, ID = -12A, VGS = -10V VDD = -30V, ID = -12A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -40 A Body Diode Voltage VSD TJ = 25ºC, ISD = -12A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr -- 53 -- nC Reverse Recovery Time Trr -- 47 -- ns IF = -12A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1606) G300P06T Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1606) G300P06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 80 80 -10V -7V 60 -6V 50 -5.5V 40 30 -5V 20 VGS= -4.5V 10 0 -ID, Drain Current (A) -ID, Drain Current (A) 70 0 1 2 VDS= -5V 70 60 50 40 25℃ 30 20 10 3 0 4 0 -VDS, Drain-to-Source Voltage (V) 2 -Vgs Gate-Source Voltage（V） RDS(on), On-Resistance (mΩ) 50 40 VGS= -10V 20 10 0 4 8 12 16 20 Ciss 2500 2000 1500 1000 Coss Crss 10 20 30 40 50 4 2 0 10 20 30 40 50 60 60 -VDS Drain-Source Voltage(V) www.gofordsemi.com 6 -Is, Reverse Drain Current (A) Capacitance(pF) 3500 0 8 Figure 6. Source-Drain Diode Forward 4000 0 VDD = -30V ID = -12A Qg Gate Charge（nC） Figure 5. Capacitance 500 10 10 0 24 -ID-Drain Current (A) 3000 8 Figure 4. Gate Charge 60 0 6 -VGS, Gate-to-Source Voltage (V) Figure 3.Drain Source On Resistance 30 4 TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(A1606) G300P06T Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area VGS = -10V ID = -12A -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance 2.5°C/W Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1606) G300P06T TO-220 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1606)