IV1Q12050T3

Sep. 2020 IV1Q12050T3 – 1200V 50mΩ SiC MOSFET Package: Features: ⚫ ⚫ ⚫ ⚫ High blocking voltage with low on-resistance High speed switching with low capacitance High operating junction temperature capability Very fast and robust intrinsic body diode Drain Pin 2 Gate Pin 1 Applications: ⚫ ⚫ ⚫ ⚫ ⚫ Source Pin 3 Solar inverters UPS Motor drivers High voltage DC/DC converters Switch mode power supplies Part Number Package IV1Q12050T3 TO247-3 Absolute Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDS Drain-Source voltage 1200 V VGS=0V, ID=100μA VGS Gate-Source voltage -5 to 20 V Recommended maximum 58 A VGS=20V, TC=25°C 43 A VGS=20V, TC=100°C Note ID Drain current (continuous) IDM Drain current (pulsed) 145 A Pulse width limited by SOA Fig. 24 PTOT Total power dissipation 327 W TC=25°C Fig. 22 Tstg Storage temperature range -55 to 175 °C TJ Operating junction temperature -55 to 175 °C TL Solder Temperature 260 °C Fig. 21 Wave soldering only allowed at leads, 1.6mm from case for 10 s Thermal Data Symbol Rθ(J-C) Parameter Thermal Resistance from Junction to Case www.inventchip.com.cn Value Unit Note 0.459 °C/W Fig. 23 Rev1.0 Sep. 2020 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Value Parameter Min. Unit Typ. Max. Test Conditions IDSS Zero gate voltage drain current 5 100 μA VDS=1200V, VGS=0V IGSS Gate leakage current 1 +100 nA VDS=0V, VGS=-5~20V V VGS=VDS, ID=6mA VTH Gate threshold voltage 3.2 RON Static drain-source onresistance VGS=VDS, ID=6mA @ TC=175°C 2.2 mΩ VGS=20V, ID=20A @TJ=25°C 80 mΩ VGS=20V, ID=20A @TJ=175°C 50 65 Ciss Input capacitance 2770 pF Coss Output capacitance 110 pF Crss Reverse transfer capacitance 10 pF Eoss Coss stored energy 45 μJ Qg Total gate charge 120 nC Qgs Gate-source charge 25 nC Qgd Gate-drain charge 48 nC Rg Gate input resistance 2.8 Ω EON Turn-on switching energy 877 μJ EOFF Turn-off switching energy 211 μJ td(on) Turn-on delay time 31 Rise time 22 Turn-off delay time 22 Fall time 19 tr td(off) tf www.inventchip.com.cn ns VDS=800V, VGS=0V, f=1MHZ, VAC=25mV Note Fig. 8, 9 Fig. 4, 5, 6, 7 Fig. 16 Fig. 17 VDS=800V, ID=20A, VGS=-5 to 20V Fig. 18 f=1MHZ VDS=800V, ID=30A, VGS=-2 to 20V, RG(ext)=3.3Ω, L=450μH Fig. 19, 20 Rev1.0 Sep. 2020 Reverse Diode Characteristics (TC=25°C unless otherwise specified) Symbol Value Parameter Min. Typ. 4.9 Unit Note Max. V ISD=20A, VGS=0V 4.4 V ISD=20A, VGS=0V, TJ=175°C VSD Diode forward voltage trr Reverse recovery time 44.4 ns Qrr Reverse recovery charge 212.6 nC IRRM Peak reverse recovery current 10.8 A www.inventchip.com.cn Test Conditions Fig. 10, 11, 12 VGS=-2V/+20V, ISD=30A, VR=800V, di/dt=1000A/us, RG(ext)=10Ω L=450μH Rev1.0 Sep. 2020 Typical Performance (curves) Fig. 1 Output Curve @ TJ=-55°C Fig. 2 Output Curve @ TJ=25°C Fig. 3 Output Curve @ TJ=175°C Fig. 4 Ron vs. Temperature Fig. 5 Normalized Ron vs. Temperature Fig. 6 Ron vs. IDS @ Various Temperature www.inventchip.com.cn Rev1.0 Sep. 2020 Fig. 7 Ron vs. Temperature @ Various VGS Fig. 9 Threshold Voltage vs. Temperature Fig. 11 Body Diode Curves @ TJ=25°C www.inventchip.com.cn Fig. 8 Transfer Curves @ Various Temperature Fig. 10 Body Diode Curves @ TJ=-55°C Fig. 12 Body Diode Curves @ TJ=175°C Rev1.0 Sep. 2020 rd Fig. 13 3 Quadrant Curves @ TJ=-55°C rd rd Fig. 14 3 Quadrant Curves @ TJ=25°C Fig. 15 3 Quadrant Curves @ TJ=175°C Fig. 16 Capacitance vs. VDS Fig. 17 Output Capacitor Stored Energy Fig. 18 Gate Charge Characteristics www.inventchip.com.cn Rev1.0 Sep. 2020 Fig. 19 Switching Energy vs. RG(ext) Fig. 21 Continuous Drain Current vs. Case Temperature Fig. 23 Thermal Impedance www.inventchip.com.cn Fig. 20 Switching Times vs. RG(ext) Fig. 22 Max. Power Dissipation Derating vs. Case Temperature Fig. 24 Safe Operating Area Rev1.0 Sep. 2020 Package Dimensions Note: 1. Package Reference: JEDEC TO247, Variation AD 2. All Dimensions are in mm 3. Slot Required, Notch May Be Rounded 4. Dimension D&E Do Not Include Mold Flash www.inventchip.com.cn Rev1.0 Sep. 2020 Notes Current revision is preliminary one, for further information please contact IVCT’s Office. Copyright©2020 InventChip Technology Co., Ltd. All rights reserved. Related Links http://www.inventchip.com.cn www.inventchip.com.cn Rev1.0