AS1M080120P

AS1M080120P N-Channel Silicon Carbide Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID@25℃ 1200V 98mΩ@20V 36A Feature Application  High Blocking Voltage With Low On-Resistance  Power Supplies  High Speed Switching With Low Capacitance  Switch Mode Power Supplies  Easy to Parallel and Simple to Drive  High Voltage DC/DC Converters  Motor Drivers  Pulsed Power Applications Package Marking Circuit diagram AS1M080120P XXXXX G TO-247-3 D S Absolute maximum ratings (TC=25℃ unless otherwise noted) Parameter Symbol Test Condition Value Unit 1200 V Drain-Source Voltage VDSmax VGS = 0V, IDS =100µA Gate-Source Voltage VGSmax Absolute maximum values -10/+25 V Gate-Source Voltage VGSOP Recommended operational values -5/+20 V ID VGS = 20V,TC=25℃ 36 A ID VGS = 20V,TC=100℃ 24 A Pulsed Drain Current IDM Pule width tp limitea by Tjmax 80 A Power Dissipation PD TC=25℃,TJ=150℃ 192 W Continuous Drain Current Thermal Resistance RθJC Junction-to-Case 0.6 ℃/W Thermal Resistance RθJA Junction-to-Ambient 40 ℃/W Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Page 1 Document ID Issued Date Revised Date Revision Page. AS-3270005 2013/03/08 2021/06/18 B 6 AS1M080120P N-Channel Silicon Carbide Power MOSFET Electrical characteristics (TC=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, IDS =100µA Zero gate voltage drain current IDSS VDS =1200V,VGS = 0V 100 µA Gate-Source leakage current IGSS+ VGS =25V, VDS = 0V 250 nA Gate-Source leakage current IGSS- VGS =-10V, VDS = 0V 250 nA Gate threshold voltage VGS(th) Drain-source on-resistance RDS(on) VDS =VGS, IDS =5mA 1200 V 2.0 4.0 VDS =VGS, IDS =5mA ,TJ=150℃ 1.8 VGS =20V, ID =20A 80 VGS =20V, ID =20A,TJ=150℃ 140 98 V mΩ Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss COSS Stored Energy Eoss Turn-on Switching Energy Eon Turn-off Switching Energy Eoff Total Gate Charge Qg 1475 94 VDS =1000V,VGS =0V,f =1MHz VAC=25mV 11 52 260 79 VDS =800V,VGS =-5V/20V, ID =20A Qgs Gate-Drain Charge Qgd 15 Turn-on delay time td(on) 9.3 Turn-off delay time tr td(off) Turn-off fall time 24 VDS=800V,VGS=-5V/20V, ID =20A,RG(ext)=2.5Ω, RL=40Ω nC 9.5 nS 18 tf Internal Gate Resistance µJ 564 VDS=800V,VGS=-5V/20V, ID =20A,RG(ext)=2.5Ω,L=200µH Gate-Source Charge Turn-on rise time pF 7.6 RG f =1MHz ,VAC=25mV Diode Forward Current IS TC=25℃ Diode Forward voltage VDS 3.1 Ω Source-Drain Diode characteristics Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 44 VGS =-5V, ISD=10A 3.6 VGS =-5V, ISD=10A,TJ=150℃ 3.3 ISD=20A,VR=800V Page 2 A V 35 nS 91 nC 4.5 A Document ID Issued Date Revised Date Revision Page. AS-3270005 2013/03/08 2021/06/18 B 6 AS1M080120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3270005 2013/03/08 2021/06/18 B 6 AS1M080120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 4 Document ID Issued Date Revised Date Revision Page. AS-3270005 2013/03/08 2021/06/18 B 6 AS1M080120P N-Channel Silicon Carbide Power MOSFET Typical Characteristics Page 5 Document ID Issued Date Revised Date Revision Page. AS-3270005 2013/03/08 2021/06/18 B 6 AS1M080120P N-Channel Silicon Carbide Power MOSFET TO-247-3 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.800 5.250 0.189 0.207 A1 2.250 2.550 0.089 0.100 b 1.050 1.350 0.041 0.053 b1 2.850 3.400 0.112 0.134 b2 1.900 2.420 0.075 0.095 c 0.550 0.700 0.022 0.028 c1 1.900 2.200 0.075 0.087 D 15.700 16.200 0.618 0.638 D1 13.000 14.200 0.512 0.559 E 16.250 17.650 0.640 0.695 E1 3.650 5.200 0.144 0.205 E2 3.650 5.200 0.144 0.205 L 19.800 20.350 0.780 0.801 L1 4.000 4.500 0.157 0.177 L2 20.800 21.200 0.819 0.835 Φ 7.180 BSC 0.283 BSC e 5.440 BSC 0.214 BSC H 6.000 6.300 Page 6 0.236 0.248 Document ID Issued Date Revised Date Revision Page. AS-3270005 2013/03/08 2021/06/18 B 6