AS6004

AS6004 P-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 120mΩ@-10V -60V -4A 170mΩ@-4.5V Feature Application  Advanced trench process technology  Load Switch for Portable Devices  High density cell design for ultra low on-resistance  DC/DC Converter Package Circuit diagram SOT-23-3L Marking 60P04Y XXXXX http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150275 2003/03/08 2021/09/10 C 5 AS6004 P-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4 A Pulsed Drain Current IDM -12 A Power Dissipation PD 1.5 W RθJA 83.3 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Thermal Resistance from Junction to Ambient ℃/W ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -60 V Zero gate voltage drain current IDSS VDS =-60V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -3 V Drain-source on-resistance1) RDS(on) -1 VGS =-10V, ID =-4A 107 120 VGS =-4.5V, ID =-3A 138 170 mΩ Dynamic characteristics 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 930 VDS =-30V,VGS =0V,f =1MHz 85 35 25 VDS =-30V,VGS =-10V, ID =-4A Gate-Source Charge Qgs Gate-Drain Charge Qgd 7 Turn-on delay time td(on) 8 Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) pF 3 nC 4 VDD=-30V,VGS=-10V, RL=7.5Ω,RGEN=3Ω nS 32 tf 7 Source-Drain Diode characteristics Diode Forward voltage VDS VGS =0V, IS=-4A -1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 Document ID AS-3150275 Issued Date 2003/03/08 Revised Date 2021/09/10 Revision C Page. 5 AS6004 P-Channel Enhancement Mode MOSFET Typical Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150275 2003/03/08 2021/09/10 C 5 AS6004 P-Channel Enhancement Mode MOSFET Typical Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 4 Document ID Issued Date Revised Date Revision Page. AS-3150275 2003/03/08 2021/09/10 C 5 AS6004 P-Channel Enhancement Mode MOSFET SOT-23-3L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.820 3.020 0.111 0.119 B 2.650 2.950 0.104 0.116 C 1.500 1.700 0.059 0.067 D 0.865 1.015 0.034 0.040 E 1.800 2.000 0.071 0.079 G 0.040 0.100 0.002 0.004 H 1.050 1.250 0.041 0.049 J 0.100 0.200 0.004 0.008 K 0.300 0.500 0.012 0.020 http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 5 Document ID Issued Date Revised Date Revision Page. AS-3150275 2003/03/08 2021/09/10 C 5