S8050

UMW R S8050 TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 z z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCB=20V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA HFE(1) VCE=1V, IC= 50mA 120 HFE(2) VCE=1V, IC= 500mA 50 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V fT Transition frequency CLASSIFICATION OF Rank Range www.umw-ic.com VCE=6V, f=30MHz IC= 20mA 150 MHz hFE(1) L H 120-200 200-350 1 友台半导体有限公司 UMW R www.umw-ic.com S8050 2 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com S8050 Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司