MMBT5551

MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Package outline Features 0.020 (0.50) (B) 0.012 (0.30) 0.045 (1.15) .084(2.10) .068(1.70) • 0.120 (3.04) • • 0.110 (2.80) • (BV CEO = 140V~ 160V@I C=1mA) This device is designed for general purpose high voltage amplifiers and gas discharge display driving . Epitaxial planar die construction . Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.MMBT5550-H. 0.034 (0.85) SOT-23 • High collector-emitterbreakdien voltage. (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data 0.051 (1.30) 0.003 (0.09) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol MMBT5550 Collector-base voltage V CBO 160 180 V Collector-emitter voltage V CEO 140 160 V Emitter-base voltage V EBO 6.0 V Collector current - continuous IC 600 mA MMBT5551 UNIT Thermal characteristics Symbol Max Collector Power Dissipation Pc 300 Thermal resistance From Junction to ambient Operating junction temperature range R θJA Storage temperature range Characteristics http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 UNIT mW O 416 C/W TJ -55 to +150 o C T STG -55 to +150 o C Document ID Issued Date Revised Date Revision Page. AS-3140018 2003/03/08 2021/07/19 E 5 MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage(3) Emitter-base breakdown voltage Collector cutoff current CONDITIONS I C = 100μA, I E = 0 V (BR)CBO I C = 1.0mA, I B = 0 V (BR)CEO V (BR)EBO I E = 10μA, I C = 0 V CB = 100V, I E = 0 I CBO V CB = 120V, I E = 0 Emitter cutoff current Symbol I EBO V EB = 4.0V, I C = 0 Types UNIT Max. Min. MMBT5550 160 - MMBT5551 180 - MMBT5550 140 - MMBT5551 160 - Both Types 6.0 - MMBT5550 - 100 MMBT5551 - 50 Both Types - 50 nA Min. Max. UNIT MMBT5550 60 - MMBT5551 80 - MMBT5550 60 300 MMBT5551 100 300 MMBT5550 20 - MMBT5551 30 - Both Types - 0.15 MMBT5550 - 0.25 MMBT5551 - 0.20 Both Types - 1.0 MMBT5550 - 1.2 MMBT5551 - 1.0 - 50 - 100 V V V nA On characteristics PARAMETER CONDITIONS Symbol I C = 1.0mA, V CE = 5.0V DC current gain I C = 10mA, V CE = 5.0V h FE I C = 50mA, V CE = 5.0V I C = 10mA, I B = 1.0mA Collector-emitter saturation voltage Base-emitter saturation voltage V CE(sat) I C = 50mA, I B = 5.0mA I C= 10mA, I B = 1.0mA V BE(sat) I C = 50mA, I B = 5.0mA Collector emitter cut - off V CB= 10V I CES V CB= 75V Types Both Types V V nA 3.Pulse test : pulse width < = 300us, duty cycle < = 2.0%. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3140018 2003/03/08 2021/07/19 E 5 MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon h FE , DC CURRENT GAIN (NORMALIZED) Rating and characteristic curves 500 300 VCE = 1.0 V VCE = 5.0 V TJ = 125 C 200 +25 C 100 -55 C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 10 I C, COLLECTOR CURRENT (mA) 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOL TAGE (VOLTS) FIG.1 DC Current Gain 1.0 0.9 TJ= 25 C 0.8 0.7 I C= 1.0 mA 0.6 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 I B , BASE CURRENT (mA) 2.0 5.0 10 20 50 1 10 1.0 VCE= 30 V 100 TJ= 125 C 10-1 -2 10 V, VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) FIG. 2 Collector Saturation Region I C = I CES 75 C -3 REVERSE -4 25 C 10 10 FORWARD TJ= 25 C 0.8 VBE(sat )@ IC / IB = 10 0.6 0.4 0.2 VCE(sat )@ IC / I B = 10 -5 10 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.6 0 0.1 FIG. 3 Collector Cut-Off Region http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I C, COLLECTOR CURRENT (mA) 100 FIG. 4 "On" Voltages Page 3 Document ID Issued Date Revised Date Revision Page. AS-3140018 2003/03/08 2021/07/19 E 5 MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Rating and characteristic curves θ V , TEMPERATURE COEFFICIENT(mV/ C) 2.5 2.0 TJ = - 55 C to +135 C 1.5 1.0 θ VCfor VCE(sat) Vin 0 - 1.0 θVBfor V BE(sat) - 1.5 t r ,t f 10 ns Vin DUTY CYCLE = 1.0% - 2.0 - 2.5 0.1 0.20.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I C , COLLECT OR CURRENT (mA) 100 100 70 50 3.0 k RB RC Vout 5.1 k 1N914 100 Values Shown are for IC @ 10 mA FIG. 6 Switching Time Test Circuit FIG.5 Temperature Coefficients 1000 TJ= 25 C (ns) t , TIME 20 10 Cibo 7.0 5.0 t r @ VCC = 120 V 300 200 t r@ VCC= 30 V 100 Cobo 3.0 I C/ I B = 10 TJ = 25 C 500 30 50 t d@ VEB(off) = 1.0 V 30 VCC= 120 V 20 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 VR, REVERSE VOLTAGE (VOLTS) 10 0.20.3 0.5 20 20 30 50 100 200 1.0 2.03.0 5.0 10 I C, COLLECTOR CURRENT (mA) FIG. 8 Turn-On T ime FIG. 7 Capacitances 5000 t f @ VCC = 120 V 3000 2000 I C / IB = 10 TJ = 25 C t f @ VCC = 30 V t , TIME (ns) C, CAP ACITANCE (pF) 100 0.25uF 10ms INPUT PULSE - 0.5 VCC 30 V VBB -8.8V 10.2 V 0.5 1000 500 300 t s@ VCC = 120 V 200 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) FIG.9 Turn-Off Time http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 4 Document ID Issued Date Revised Date Revision Page. AS-3140018 2003/03/08 2021/07/19 E 5 MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code MMBT5550 MMBT5551 M1F G1 Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 5 Document ID Issued Date Revised Date Revision Page. AS-3140018 2003/03/08 2021/07/19 E 5