MMBT4401

MMBT4401 General Purpose Transistors NPN Silicon Package outline 0.020 (0.50) (B) 0.012 (0.30) .084(2.10) .068(1.70) 0.120 (3.04) standards of MIL-STD-19500 /228 • Suffix "-H" dinicates Halogen-free part, ex.MMBT4401-H. 0.110 (2.80) 0.045 (1.15) • Epitaxial plana chip construction • Ideal for medium power application and switching • Capable of 225mW power dissipation. • Lead-free parts for green partner, exceeds environmental 0.034 (0.85) SOT-23 Features (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) 0.108 (2.75) Mechanical data 0.051 (1.30) 0.003 (0.09) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.007 (0.18) 0.083 (2.10) 0.035 (0.89) MIL-STD-750, Method 2026 • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. TYP. MAX. UNIT Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 6.0 V IC 600 mA PD 225 mW 1.8 mW/ OC Collector current O Total device dissipation FR-5 board (1) T A = 25 C Thermal resistance Junction to ambient Total device dissipation alumina substrate(2) O Derate above 25 C O T A = 25 C 556 PD 300 mW 2.4 mW/ OC O Derate above 25 C Thermal resistance Junction to ambient Operating junction temperature range Storage temperature range O R θJA R θJA 417 O C/W C/W TJ -55 +150 o C T STG -55 +150 o C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3140015 2003/03/08 2012/05/16 D 6 MMBT4401 General Purpose Transistors NPN Silicon Electrical characteristics (AT T =25 C unless otherwise noted) o A Off characteristics PARAMETER Symbol MIN. Collector-base breakdown voltage I c = 0.1mA, I E = 0 V (BR)CBO 60 V Collector-emitter breakdown voltage CONDITIONS TYP. MAX. UNIT I c = 1.0mA, I B = 0 V (BR)CEO 40 V Emitter-base breakdown voltage I E = 0.1mA, I C = 0 V (BR)EBO 6.0 V Base cutoff current V CE = 35V, V EB = 0.4 V I BEV 0.1 μA Collector cutoff current V CE = 35V, V EB = 0.4V I CEX 0.1 μA On characteristics(3) PARAMETER CONDITIONS Symbol Collector-emitter saturation voltage I c = 10mA, V CE = 1.0V h FE 100 I c = 500mA, V CE = 2.0V 40 300 0.4 V CE(sat) I c = 150mA, I B = 15mA V 0.75 I c = 500mA, I B = 50mA Base-emitter saturation voltage MAX. UNIT 80 I c = 150mA, V CE = 1.0V I c = 150mA, I B = 15mA TYP. 40 I c = 1.0mA, V CE = 1.0V DC current gain MIN. 20 I c = 0.1mA, V CE = 1.0V V BE(sat) 0.75 0.95 V 1.20 I c = 500mA, I B = 50mA < 3.Pulse test : pulse width < 300us, duty cycle = = 2.0%. Small-signal characteristics PARAMETER CONDITIONS Symbol MIN. fT 250 Current-gain-bandwidth product I C = 20mA, V CE = 20V, f = 100MHz Collector-base capacitance V CB = 5.0V, I E = 0, f = 1.0MHz Emitter - base capacitance V EB = 0.5V, I C = 0, f = 1.0MHz Input impedance V CE = 10mA, I C = 1.0mA, f = 1.0KHz h ie Voltage feeback radio V CE = 10V, I C = 1.0mA, f = 1.0KHz h re Small-signal current gain V CE = 10V, I C = 1.0mA, f = 1.0KHz Output admittance V CE = 10V, I C = 1.0mA, f = 1.0KHz TYP. MAX. UNIT MHz C cb 6.5 pF C eb 30 pF 1.0 15 kΩ 0.1 8.0 X 10 -4 h fe 40 500 h oe 1.0 30 Symbol MIN. μmhos Switching characteristics PARAMETER CONDITIONS Delay time Rise time V CC = 30V, V BE = 2.0V, I C = 150mA, I B1 = 15mA Storage time V CC = 30V, I C =150mA, I B1 = I B2 = 15mA Fall time http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 TYP. MAX. UNIT td 15 tr 20 ts 225 tf 30 ns Document ID Issued Date Revised Date Revision Page. AS-3140015 2003/03/08 2012/05/16 D 6 MMBT4401 General Purpose Transistors NPN Silicon SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100us, DUTY CYCLE -- 2.0% +16 V 0 -2.0 V 200Ω 1.0 to 100 us, DUTY CYCLE-- 2.0% +16 V 200Ω 0 1.0 kΩ 1.0 kΩ -14 V CS* < 10 pF < 2.0 ns < 20 ns CS* < 10 pF 1N916 - 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time TRANSIENT CHARACTERISTICS 25C 105 C 30 10 7.0 5.0 Cobo 10 7.0 5.0 1.0 0.7 0.5 0.3 0.2 Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (VOLTS) 20 30 QT 2.0 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Q, CHARGE (nC) CAPACIT ANCE (pF) 20 0.1 10 50 QA 20 Figure 3. Capacitances 200 300 30 50 70 100 I C , COLLECTOR CURRENT (mA) Figure 4. Charge Data 100 100 IC/IB= 10 70 VCC = 30 V IC/IB = 10 70 tr 50 tr @ VCC= 30 V tr @ VCC= 10 V td @ VEB= 2.0 V td @ VEB= 0 30 20 t, TIME (ns) t, TIME (ns) 50 30 10 7.0 7.0 20 30 50 70 100 200 300 500 I C, COLLECTOR CURRENT (mA) 5.0 10 20 30 50 70 100 200 300 500 IC , COLLECTOR CURRENT (mA) Figure 6. Rise and Fall T imes Figure 5. Turn-On Time http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 tf 20 10 5.0 10 500 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3140015 2003/03/08 2012/05/16 D 6 Rating and characteristic curves (MMBT4401) 100 ts4= ts - 1/8 t f IB1 = IB2 IC/IB = 10 to 20 200 VCC = 30 V IB1 = IB2 70 50 tf , FALL TIME (ns) t s 4 , STORAGE TIME (ns) 300 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 10 20 30 50 200 70 100 300 5.0 10 500 I C, COLLECTOR CURRENT (mA) 20 30 Figure 7. Storage T ime MMBT4401 UNIT 1 MMBT4401 UNIT 2 70 50 30 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hie , INPUT IMPEDANCE (OHMS) hfe , CURRENT GAIN 100 10k 5.0k 2.0k 1.0k 500 0.1 5.0 7.0 10 hoe , OUTPUT ADMITT ANCE ( u mhos) -4) h re , VOL TAGE FEEDBACK RATIO (X 10 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I C, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 7.0 10 100 50 20 10 MMBT4401 UNIT 1 MMBT4401UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I C, COLLECTOR CURRENT (mA) Figure 11. Voltage Feedback Ratio http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 0.5 0.7 1.0 Figure 10. Input Impedance MMBT4401 UNIT 1 MMBT4401 UNIT 2 3.0 0.2 0.3 I C, COLLECTOR CURRENT (mA) Figure 9. Current Gain 0.2 0.1 500 MMBT4401 UNIT 1 MMBT4401 UNIT 2 20k I C, COLLECTOR CURRENT (mA) 10 300 50k 200 7.0 5.0 200 70 100 Figure 8. Fall T ime 300 20 0.1 50 I C, COLLECTOR CURRENT (mA) Figure 12. Output Admittance Page 4 Document ID Issued Date Revised Date Revision Page. AS-3140015 2003/03/08 2012/05/16 D 6 Rating and characteristic curves (MMBT4401) STATIC CHARACTERISTICS GAIN 3.0 VCE = 1.0 V VCE = 10 V hFE , NORMALIZED CURRENT 2.0 TJ = 125 C 1.0 25 C 0.7 0.5 -55 C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 5.0 7.0 10 20 2.0 3.0 I C, COLLECT OR CURRENT (mA) 30 70 100 50 200 300 500 VCE , COLLECT OR-EMITTER VOL TAGE (VOL TS) Figure 13. DC Current Gain 1.0 TJ = 25 C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I B, BASE CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 Figure 14. Collector Saturation Region 1.0 +0.5 TJ = 25 C VBE(sat)@ IC/IB= 10 0.6 0 COEFFICIENT (mV/ C) VOLTAGE (VOLTS) 0.8 VBE@ VCE= 10 V 0.4 0.2 VCE(sat)@ IC /IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) 500 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 0.2 Figure 15. "On" Voltages http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 θVC for VCE(sat) θVB for VBE 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, COLLECTOR CURRENT (mA) 500 Figure 16. Temperature Coefficients Page 5 Document ID Issued Date Revised Date Revision Page. AS-3140015 2003/03/08 2012/05/16 D 6 MMBT4401 General Purpose Transistors NPN Silicon Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code MMBT4401 2X Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 6 Document ID Issued Date Revised Date Revision Page. AS-3140015 2003/03/08 2012/05/16 D 6