AS2324

AS2324 N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 280mΩ@10V 100V 2A 310mΩ@4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 1002. Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150042 2003/03/08 2022/01/16 F 3 AS2324 N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 2 A Pulsed Drain Current IDM 8 A Power Dissipation PD 1.2 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =250µA 3.0 V Gate threshold voltage Drain-source on-resistance 1) RDS(on) 100 V 1.1 VGS =10V, ID =2A 280 VGS =4.5V, ID =2A 310 mΩ 2) Dynamic characteristics 330 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 17 Total Gate Charge Qg 5.3 Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.8 Turn-on delay time td(on) 14 Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time VDS =50V,VGS =0V,f =1MHz pF 88 VDS =50V,VGS =10V,ID =2A nC 1.4 54 VDD=50V, VGS =10V, ID =1.3A,RGEN=1Ω, RL=39Ω nS 18 tf 11 Source-Drain Diode characteristics 1) Diode Forward Current IS Diode Forward voltage VDS VGS =0V, IS=2A 2.0 A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150042 2003/03/08 2022/01/16 F 3 AS2324 N-Channel Enhancement Mode MOSFET SOT-23 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.200 0.003 0.008 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP. 1.800 L L1 2.000 0.071 0.550 REF. 0.300 0.100 0. 0.037 TYP. 0.079 0. 0.022 REF. 0.500 Page 3 0.012 0.020 Document ID Issued Date Revised Date Revision Page. AS-31500 042 2003/03/08 2022/01/16 F 3