0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
AO3414A

AO3414A

  • 厂商:

    UMW(友台)

  • 封装:

    SOT23-3

  • 描述:

    表面贴装型 N 通道 20 V 4.2A(Ta) 1.4W(Ta) SOT-23

  • 数据手册
  • 价格&库存
AO3414A 数据手册
UMW R UMW AO3414A N-Channel Enhancement MOSFET Features VDS (V) = 20V SOT–23 ID = 4.2A (VGS=4.5V) RDS(ON) 26m (VGS = 4.5V) RDS(ON) 36m (VGS = 2.5V) RDS(ON) 57m (VGS = 1.8V) 1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current *1 TA=25 TA=70 P u l s e d D r a i n Cu r r e n t * 2 Power Dissipation *1 TA=25 TA=70 4.2 ID 3.2 A 15 IDM 1.4 PD 0.9 W Themal Resistance.Junction-to-Ambient *1 RthJA 125 /W Themal Resistance.Junction-to-Case RthJC 80 /W Junction and Storage Temperature Range TJ, TSTG -55 to 150 2 *1The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 www.umw-ic.com 1 友台半导体有限公司 UMW R UMW AO3414A Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol VDSS Testconditions ID =250uA , V GS=0V 100 nA 0.6 1 V VGS=4.5V, ID=4.2A 23 26 VGS=2.5V, ID=3.7A 32 36 VGS=1.8V, ID=3.2A 48 57 VDS=0V, VGS= ±8V VGS(th) VDS=VGS ID=250uA On state drain current ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge V 5 IGSS Forward Transconductance 20 Unit VDS=16V, VGS=0V ,TJ=55 Gate-Body leakage current RDS(ON) Max 1 IDSS Static Drain-Source On-Resistance Typ VDS=16V, VGS=0V Zero Gate Voltage Drain Current Gate Threshold Voltage Min 0.4 VGS=4.5V, VDS=5V 15 VDS=5V, ID=4.2A VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz A m A 11 S 436 pF 66 pF 44 pF 3 6.2 nC 1.6 nC Qgd 0.5 nC Turn-On DelayTime tD(on) 5.5 ns Turn-On Rise Time tr 6.3 ns Turn-Off DelayTime tD(off) 40 ns VGS=4.5V, VDS= =10V, ID=4.2A VGS=4.5V, VDS=10V, RL=2.7Ω,RGEN=6Ω Turn-Off FallTime tf 12.7 ns Body Diode Reverse Recovery Time trr IF=4A, dI/dt=100A/ s 12.3 ns Qrr IF=4A, dI/dt=100A/ s 3.5 nC Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Diode Forward Voltage www.umw-ic.com IS VSD IS=1A,VGS=0V 2 0.76 2 A 1 V 友台半导体有限公司 UMW R UMW AO3414A ■ Typical Characterisitics 16 10 8V 4.5V VDS=5V 8 2V 3V 2.5V 8 6 ID(A) ID (A) 12 4 VGS=1.5V 4 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 100 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 1.8 VGS=1.8V 80 VGS=2.5V 60 40 VGS=4.5V 20 0 4 8 VGS=2.5 1.6 VGS=1.8V 1.4 ID=4.2A VGS=4.5V 1.2 1 0.8 12 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 100 90 1E+00 ID=4.2A 80 125°C 1E-01 70 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 60 50 25°C 1E-03 25°C 40 1E-02 1E-04 30 1E-05 20 0 2 4 6 0.0 8 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.umw-ic.com 0.2 3 友台半导体有限公司 UMW R UMW AO3414A ■ Typical Characterisitics 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=4.2A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 10 20 TJ(Max)=150°C TA=25°C 15 RDS(ON) limited 10µs 1ms 0.1s 1.0 10ms 20 10 5 1s 10s DC 0.1 0.1 15 TJ(Max)=150°C TA=25°C 100µs Power (W) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss 1 10 0 0.001 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) . ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.umw-ic.com 4 友台半导体有限公司 UMW R UMW AO3414A Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° AETL 22 Marking U Ordering information Order code Package Baseqty Deliverymode UMW AO3414A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司
AO3414A 价格&库存

很抱歉,暂时无法提供与“AO3414A”相匹配的价格&库存,您可以联系我们找货

免费人工找货
AO3414A
  •  国内价格 香港价格
  • 3000+0.795413000+0.09628
  • 6000+0.715866000+0.08665
  • 15000+0.6363215000+0.07703
  • 30000+0.5965530000+0.07221
  • 75000+0.5289475000+0.06403
  • 150000+0.50905150000+0.06162

库存:2918

AO3414A
  •  国内价格 香港价格
  • 1+4.237661+0.51295
  • 10+3.1782410+0.38471
  • 25+2.7827325+0.33684
  • 100+1.80194100+0.21812
  • 250+1.49133250+0.18052
  • 500+1.19311500+0.14442
  • 1000+0.914731000+0.11073

库存:2918