UMW
R
UMW AO3414A
N-Channel Enhancement MOSFET
Features
VDS (V) = 20V
SOT–23
ID = 4.2A (VGS=4.5V)
RDS(ON)
26m
(VGS = 4.5V)
RDS(ON)
36m
(VGS = 2.5V)
RDS(ON)
57m
(VGS = 1.8V)
1. GATE
2. SOURCE
3. DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
8
V
Continuous Drain
Current *1
TA=25
TA=70
P u l s e d D r a i n Cu r r e n t * 2
Power Dissipation *1
TA=25
TA=70
4.2
ID
3.2
A
15
IDM
1.4
PD
0.9
W
Themal Resistance.Junction-to-Ambient *1
RthJA
125
/W
Themal Resistance.Junction-to-Case
RthJC
80
/W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
2
*1The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz.
Copper, in a still air environment with TA =25
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友台半导体有限公司
UMW
R
UMW AO3414A
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Testconditions
ID =250uA , V
GS=0V
100
nA
0.6
1
V
VGS=4.5V, ID=4.2A
23
26
VGS=2.5V, ID=3.7A
32
36
VGS=1.8V, ID=3.2A
48
57
VDS=0V, VGS= ±8V
VGS(th)
VDS=VGS ID=250uA
On state drain current
ID(ON)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
V
5
IGSS
Forward Transconductance
20
Unit
VDS=16V, VGS=0V ,TJ=55
Gate-Body leakage current
RDS(ON)
Max
1
IDSS
Static Drain-Source On-Resistance
Typ
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Min
0.4
VGS=4.5V, VDS=5V
15
VDS=5V, ID=4.2A
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
A
m
A
11
S
436
pF
66
pF
44
pF
3
6.2
nC
1.6
nC
Qgd
0.5
nC
Turn-On DelayTime
tD(on)
5.5
ns
Turn-On Rise Time
tr
6.3
ns
Turn-Off DelayTime
tD(off)
40
ns
VGS=4.5V, VDS= =10V, ID=4.2A
VGS=4.5V, VDS=10V, RL=2.7Ω,RGEN=6Ω
Turn-Off FallTime
tf
12.7
ns
Body Diode Reverse Recovery Time
trr
IF=4A, dI/dt=100A/
s
12.3
ns
Qrr
IF=4A, dI/dt=100A/
s
3.5
nC
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
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IS
VSD
IS=1A,VGS=0V
2
0.76
2
A
1
V
友台半导体有限公司
UMW
R
UMW AO3414A
■ Typical Characterisitics
16
10
8V
4.5V
VDS=5V
8
2V
3V
2.5V
8
6
ID(A)
ID (A)
12
4
VGS=1.5V
4
125°C
2
25°C
0
0
0
1
2
3
4
5
0
0.5
100
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
2
2.5
1.8
VGS=1.8V
80
VGS=2.5V
60
40
VGS=4.5V
20
0
4
8
VGS=2.5
1.6
VGS=1.8V
1.4
ID=4.2A
VGS=4.5V
1.2
1
0.8
12
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
100
90
1E+00
ID=4.2A
80
125°C
1E-01
70
IS (A)
RDS(ON) (mΩ)
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
125°C
60
50
25°C
1E-03
25°C
40
1E-02
1E-04
30
1E-05
20
0
2
4
6
0.0
8
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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0.2
3
友台半导体有限公司
UMW
R
UMW AO3414A
■ Typical Characterisitics
800
5
VGS (Volts)
Capacitance (pF)
VDS=10V
ID=4.2A
4
3
2
1
600
Ciss
400
Coss
200
0
0
0
2
4
6
0
8
10.0
10
20
TJ(Max)=150°C
TA=25°C
15
RDS(ON)
limited
10µs
1ms
0.1s
1.0
10ms
20
10
5
1s
10s
DC
0.1
0.1
15
TJ(Max)=150°C
TA=25°C
100µs
Power (W)
100.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
Crss
1
10
0
0.001
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
.
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
1
PD
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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友台半导体有限公司
UMW
R
UMW AO3414A
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
0°
8°
AETL
22
Marking
U
Ordering information
Order code
Package
Baseqty
Deliverymode
UMW AO3414A
SOT-23
3000
Tape and reel
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友台半导体有限公司
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