MMBT2222A

MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Features Package outline • High collector-emitterbreakdien voltage. (BV CEO = 40V@I C=10mA) SOT-23 • S mall load switch transistor with high gain and low 0.020 (0.50) 0.034 (0.85) (B) (C) (A) 0.063 (1.60) 0.027 (0.67) 0.013 (0.32) 0.047 (1.20) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per 0.012 (0.30) .084(2.10) 0.045 (1.15) Mechanical data .068(1.70) 0.120 (3.04) 0.108 (2.75) 0.007 (0.18) 0.083 (2.10) 0.051 (1.30) MIL-STD-750, Method 2026 0.003 (0.09) • 0.110 (2.80) • • stauration voltage, is designed for general purpose amflifier and switching applications at collector current. Capable of 225mW power dissipation. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.MMBT2222-H. 0.035 (0.89) • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol MMBT2222 MMBT2222A UNIT Collector-base voltage CONDITIONS V CBO 60 75 V Collector-emitter voltage V CEO 30 40 V Emitter-base voltage V EBO 5.0 6.0 V Collector current Total device dissipation FR-5 board (1) O T A = 25 C IC 600 mA PD 225 mW 1.8 mW/ OC O Derate above 25 C Thermal resistance(1) Junction to ambient O Total device dissipation alumina substrate(2) T A = 25 C Thermal resistance(2) Junction to ambient 556 PD 300 mW 2.4 mW/ OC O Derate above 25 C R θJA Operating junction temperature range Storage temperature range O R θJA O 417 C/W C/W TJ -55 to +150 o C T STG -55 to +150 o C 1.FR-5 = 1.0 X 0.75 X0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3140011 2003/03/08 2012/05/16 D 6 MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) ON CHARACTERISTICS MMBT2222A ONLY MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 2 Document ID Issued Date Revised Date Revision Page. AS-3140011 2003/03/08 2012/05/16 D 6 MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) SMALL–SIGNAL CHARACTERISTICS MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A κΩ MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A μ MMBT2222A MMBT2222A MMBT2222A (I C =100 μ Adc, V CE =10Vdc, R S= 1.0kΩ , f=1.0 kHz) MMBT2222A SWITCHING CHARACTERISTICS(FMBT2222A only) 3.Pulse Test:Pulse Width 300 μ s, Duty Cycle 2.0%. 4.f T is defined as the frequency at which Ihfe extrapolates to unity. http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 3 Document ID Issued Date Revised Date Revision Page. AS-3140011 2003/03/08 2012/05/16 D 6 MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Typical Pulsed Current Gain vs Collector Current VCESAT COLLECTOR-EMITTER VOLTAGE (V) hFE-TYPICAL PULSED CURRENT GAIN Rating and characteristic curves (MMBT2222 / MMBT2222A) 500 VCE=5V 400 125 C 300 200 25 C 100 -40 C 0 0.1 0.3 1 3 10 30 100 Ic-COLLECTOR CURRENT (mA) 300 Collector- Emitter Saturation Voltage vs Collector Current 0.4 b=10 0.3 125 C 0.2 25 C 0.1 -40 C 1 25 C 0.6 125 C 0.4 10 100 500 VBE(ON)BASE-EMITTER ON VOLTAGE (V) VBESAT BASE-EMITTER VOLTAGE (V) -40 C 1 1 VCE=5V 0.8 -40 C 25 C 0.6 125 C 0.4 0.2 0.1 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) C0llector-Cutoff Current vs Ambient Temperature Emitter Transition and Output Capacitance vs Reverse Bias Voltage 500 20 VCB=40V 100 CAPACITANCE(pF) ICBO COLLECTOR CURRENT (nA) 500 Base-Emitter ON Voltage vs Collector Current b=10 0.8 100 Ic-COLLECTOR CURRENT (mA) Base-Emitter Saturation Voltage vs Collector Current 1 10 10 1 0.1 f=1MHz 16 12 Cib 8 Cob 4 25 50 75 100 125 150 0.1 TA-AMBIENT TEMPERATURE ( C) http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 1 10 100 REVERSE BIAS VOLTAGE (V) Page 4 Document ID Issued Date Revised Date Revision Page. AS-3140011 2003/03/08 2012/05/16 D 6 MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Rating and characteristic curves (MMBT2222 / MMBT2222A) Turn On and Turn Off Times vs Collector Current 400 400 1c IB1=I B2= 10 320 320 Vcc=25V 240 160 Vcc=25V 240 160 80 tON 10 0 100 ts tr tOFF 80 0 1c 10 IB1=I B2= TIME (nS) TIME (nS) Switching Times vs Collector Current 1000 tf td 10 100 1000 Ic-COLLECTOR CURRENT(mA) Ic-COLLECTOR CURRENT(mA) PD-POWER DISSIPATION (W) Power Dissipation vs Ambient Temperature 1 0.75 0.5 SOT-23 0.25 0 0 25 50 75 100 125 150 TEMPERATURE( C) http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 5 Document ID Issued Date Revised Date Revision Page. AS-3140011 2003/03/08 2012/05/16 D 6 MMBT2222 / MMBT2222A General Purpose Transistor NPN Silicon Pinning information Pin Simplified outline Symbol C PinB PinC PinE C Base Collector Emitter B E B E Marking Type number Marking code MMBT2222 MMBT2222A M1B 1P Suggested solder pad layout SOT-23 0.037(0.95) 0.037(0.95) 0.079(2.0) 0.035(0.90) 0.031(0.80) Dimensions in inches and (millimeters) http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482812 Page 6 Document ID Issued Date Revised Date Revision Page. AS-3140011 2003/03/08 2012/05/16 D 6